CN1547791A - 非对称波导电吸收调制激光器 - Google Patents

非对称波导电吸收调制激光器 Download PDF

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Publication number
CN1547791A
CN1547791A CNA028059972A CN02805997A CN1547791A CN 1547791 A CN1547791 A CN 1547791A CN A028059972 A CNA028059972 A CN A028059972A CN 02805997 A CN02805997 A CN 02805997A CN 1547791 A CN1547791 A CN 1547791A
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China
Prior art keywords
waveguide
laser device
region
doped region
doped
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Pending
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CNA028059972A
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English (en)
Chinese (zh)
Inventor
˹�ٷҡ�R������˹��
斯蒂芬·R·福里斯特
��R���꿨��
米德林·R·戈卡莱
�V���Ʒ�
帕维尔·V·斯图德尼科夫
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Princeton University
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Princeton University
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Publication of CN1547791A publication Critical patent/CN1547791A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265Intensity modulators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125Distributed Bragg reflector [DBR] lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
CNA028059972A 2001-01-19 2002-01-18 非对称波导电吸收调制激光器 Pending CN1547791A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US26286301P 2001-01-19 2001-01-19
US60/262,863 2001-01-19
US09/891,639 2001-06-26
US09/891,639 US6483863B2 (en) 2001-01-19 2001-06-26 Asymmetric waveguide electroabsorption-modulated laser

Publications (1)

Publication Number Publication Date
CN1547791A true CN1547791A (zh) 2004-11-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028059972A Pending CN1547791A (zh) 2001-01-19 2002-01-18 非对称波导电吸收调制激光器

Country Status (10)

Country Link
US (1) US6483863B2 (enExample)
EP (1) EP1368870B1 (enExample)
JP (1) JP2004523113A (enExample)
KR (1) KR20030093199A (enExample)
CN (1) CN1547791A (enExample)
AT (1) ATE330346T1 (enExample)
AU (1) AU2002245278A1 (enExample)
CA (1) CA2435330A1 (enExample)
DE (1) DE60212344T2 (enExample)
WO (1) WO2002058251A2 (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102611000A (zh) * 2012-03-23 2012-07-25 中国科学院长春光学精密机械与物理研究所 高效率非对称光场分布垂直腔面发射半导体激光器
CN103329367A (zh) * 2011-01-18 2013-09-25 索尼公司 半导体激光器件
CN103688428A (zh) * 2011-03-30 2014-03-26 英特尔公司 高效绝缘体上硅光栅耦合器
WO2014101877A1 (en) * 2012-12-31 2014-07-03 Huawei Technologies Co., Ltd. Silicon-on-insulator platform for integration of tunable laser arrays
CN104204880A (zh) * 2012-03-30 2014-12-10 富士通株式会社 光元件、光发送元件、光接收元件、混合波导激光器、光发送装置
CN105826812A (zh) * 2015-01-27 2016-08-03 华为技术有限公司 可调激光器和调谐激光器的方法
CN107046229A (zh) * 2016-02-05 2017-08-15 南京威宁锐克信息技术有限公司 一种激光器阵列的制作方法及激光器阵列
CN107076928A (zh) * 2014-08-15 2017-08-18 康宁光电通信有限责任公司 用于耦合具有相异模场直径的波导的方法和相关设备、部件与系统
CN107710528A (zh) * 2015-06-25 2018-02-16 华为技术有限公司 快速可调谐的可变栅格激光器
CN113126204A (zh) * 2021-04-13 2021-07-16 中山大学 一种可见光波段薄膜铌酸锂光栅耦合器及其制备方法
CN113167968A (zh) * 2018-11-30 2021-07-23 三菱电机株式会社 光栅耦合器和集成式光栅耦合器系统
US20210249840A1 (en) * 2020-02-12 2021-08-12 Sumitomo Electric Industries, Ltd. Semiconductor optical device and method for producing semiconductor optical device
CN114156732A (zh) * 2021-11-29 2022-03-08 青岛海信宽带多媒体技术有限公司 一种激光芯片及光模块
CN114761845A (zh) * 2019-11-26 2022-07-15 思敏光子控股有限责任公司 用于光子集成电路的波导结构

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
US6795622B2 (en) * 1998-06-24 2004-09-21 The Trustess Of Princeton University Photonic integrated circuits
EP1381893A4 (en) * 2001-04-27 2005-07-20 Sarnoff Corp PHOTONIC INTEGRATED CIRCUIT (IPC) AND METHODS FOR PRODUCING THE SAME
US6600847B2 (en) * 2001-11-05 2003-07-29 Quantum Photonics, Inc Semiconductor optical device with improved efficiency and output beam characteristics
US7035305B2 (en) * 2002-05-10 2006-04-25 Bookham Technology, Plc Monolithically integrated high power laser optical device
US6956983B2 (en) * 2002-05-31 2005-10-18 Intel Corporation Epitaxial growth for waveguide tapering
US6989284B2 (en) * 2002-05-31 2006-01-24 Intel Corporation Fabrication of a waveguide taper through ion implantation
US6975798B2 (en) * 2002-07-05 2005-12-13 Xponent Photonics Inc Waveguides assembled for transverse-transfer of optical power
US7330619B2 (en) * 2003-04-29 2008-02-12 Hoya Corporation Usa Laser and photodetector coupled by planar waveguides
US7283701B2 (en) * 2003-08-01 2007-10-16 Optium Corporation Optical fiber transmission system with increased effective modal bandwidth transmission
US7233709B2 (en) * 2003-11-04 2007-06-19 Avago Technologies Fiber Ip (Singapore) Ltd. Pte. Electro-absorption modulator
US20050105853A1 (en) * 2003-11-13 2005-05-19 Ansheng Liu Method and apparatus for dual tapering an optical waveguide
US7373048B2 (en) * 2004-02-18 2008-05-13 Trustees Of Princeton University Polarization insensitive semiconductor optical amplifier
US7230963B2 (en) * 2004-04-14 2007-06-12 The Trustees Of Princeton University Monolithic wavelength stabilized asymmetric laser
EP1740992B1 (en) * 2004-04-15 2018-10-10 Infinera Corporation Coolerless and floating wavelength grid photonic integrated circuits (pics) for wdm transmission networks
EP1735884B1 (en) * 2004-04-15 2010-11-10 Binoptics Corporation Multi-level integrated photonic devices
US7425726B2 (en) * 2004-05-19 2008-09-16 Avago Technologies Fiber Ip Pte Ltd. Electroabsorption modulators and methods of making the same
KR100737348B1 (ko) * 2004-12-14 2007-07-09 한국전자통신연구원 전계흡수형 광 변조기 및 그 제조방법
US7164838B2 (en) 2005-02-15 2007-01-16 Xponent Photonics Inc Multiple-core planar optical waveguides and methods of fabrication and use thereof
TWI269083B (en) * 2005-08-22 2006-12-21 Univ Nat Central Step-shaped optical waveguide structure
US20070070309A1 (en) * 2005-09-28 2007-03-29 Miklos Stern Color image projection arrangement and method employing electro-absorption modulated green laser system
US7333689B2 (en) * 2005-09-30 2008-02-19 The Trustees Of Princeton University Photonic integrated devices having reduced absorption loss
US7343061B2 (en) 2005-11-15 2008-03-11 The Trustees Of Princeton University Integrated photonic amplifier and detector
US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer
US7961765B2 (en) * 2009-03-31 2011-06-14 Intel Corporation Narrow surface corrugated grating
US8472766B2 (en) * 2009-08-14 2013-06-25 Massachusetts Institute Of Technology Waveguide coupler having continuous three-dimensional tapering
JP5742344B2 (ja) 2011-03-20 2015-07-01 富士通株式会社 受光素子、光受信器及び光受信モジュール
EP2544319B1 (en) * 2011-07-08 2015-03-25 Alcatel Lucent Laser source for photonic integrated devices
KR20130128651A (ko) * 2012-05-17 2013-11-27 한국전자통신연구원 전계흡수형 변조기 레이저
US9306372B2 (en) * 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306672B2 (en) * 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
CN104242052B (zh) * 2013-06-18 2018-01-19 中国科学院苏州纳米技术与纳米仿生研究所 环形腔器件及其制作方法
EP2816679B1 (fr) * 2013-06-21 2022-09-21 Alcatel Lucent Dispositif d'émission laser à modulateur de lumière intégré
JP6173206B2 (ja) * 2013-12-20 2017-08-02 三菱電機株式会社 光集積素子
JP6295762B2 (ja) * 2014-03-25 2018-03-20 日本電気株式会社 光集積回路とその製造方法
US9564733B2 (en) * 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
FR3061961B1 (fr) * 2017-01-19 2019-04-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif photonique comportant un laser optiquement connecte a un guide d'onde silicium et procede de fabrication d'un tel dispositif photonique
US10177854B2 (en) 2017-03-20 2019-01-08 Emcore Corporation Modulated optical source and methods of its operation
US11262605B2 (en) * 2017-08-31 2022-03-01 Lightwave Logic Inc. Active region-less polymer modulator integrated on a common PIC platform and method
CN110687694A (zh) * 2018-07-04 2020-01-14 上海新微技术研发中心有限公司 电吸收调制器及半导体器件
EP3696583B1 (en) * 2019-02-15 2022-03-16 EFFECT Photonics B.V. Photonic integrated circuit having improved electrical isolation between n-type contacts
JP7724159B2 (ja) 2019-05-28 2025-08-15 シエナ コーポレーション モノリシック集積利得素子
US10845550B1 (en) * 2019-10-18 2020-11-24 The Boeing Company Input coupler for chip-scale laser receiver device
US11231549B2 (en) * 2019-11-14 2022-01-25 Honeywell International Inc. Integrated active/passive visible/UV modulator
WO2021097560A1 (en) 2019-11-18 2021-05-27 Electrophotonic-Ic Inc. Vertically integrated electro-absorption modulated lasers and methods of fabrication
EP4062212B1 (en) * 2019-11-22 2024-10-09 RTX BBN Technologies, Inc. Hetergenous integration and electro-optic modulation of iii-nitride photonics on a silicon photonic platform
US11366202B2 (en) * 2020-07-01 2022-06-21 Ours Technology, Llc Semiconductor laser and optical amplifier photonic package
US11287573B1 (en) * 2020-10-19 2022-03-29 Nexus Photonics Llc Heterogeneously integrated photonic devices with improved optical coupling between waveguides
EP4050741A1 (en) 2021-02-26 2022-08-31 EFFECT Photonics B.V. Monolithic photonic integrated circuit and opto-electronic system comprising the same
US11719883B1 (en) * 2022-02-18 2023-08-08 Nexus Photonics Inc Integrated GaAs active devices with improved optical coupling to dielectric waveguides
CN116899914B (zh) * 2023-09-14 2024-01-23 厦门优迅高速芯片有限公司 Eml激光器筛选方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140149A (en) 1989-03-10 1992-08-18 Canon Kabushiki Kaisha Optical apparatus using wavelength selective photocoupler
US5039189A (en) 1990-04-06 1991-08-13 Lockheed Missiles & Space Company, Inc. Optical signal distribution network and method of converting independent optical/electrical signals
US5208878A (en) 1990-11-28 1993-05-04 Siemens Aktiengesellschaft Monolithically integrated laser-diode-waveguide combination
EP0552390B1 (de) 1992-01-20 1995-09-27 Siemens Aktiengesellschaft Abstimmbare Laserdiode
US5355386A (en) 1992-11-17 1994-10-11 Gte Laboratories Incorporated Monolithically integrated semiconductor structure and method of fabricating such structure
JP2765793B2 (ja) 1993-03-16 1998-06-18 シャープ株式会社 モード分離素子および光磁気ディスク用ピックアップ
JP2606079B2 (ja) 1993-06-25 1997-04-30 日本電気株式会社 光半導体素子
US5663824A (en) 1993-11-02 1997-09-02 Lucent Technologies Inc. Optical modulators as monolithically integrated optical isolators
EP0664587B1 (de) 1994-01-19 1997-06-25 Siemens Aktiengesellschaft Abstimmbare Laserdiode
US5844929A (en) 1994-02-24 1998-12-01 British Telecommunications Public Limited Company Optical device with composite passive and tapered active waveguide regions
JPH07326820A (ja) 1994-05-30 1995-12-12 Mitsubishi Electric Corp 波長可変半導体レーザ装置
US5574742A (en) * 1994-05-31 1996-11-12 Lucent Technologies Inc. Tapered beam expander waveguide integrated with a diode laser
US5623363A (en) 1995-02-27 1997-04-22 Lucent Technologies Inc. Semiconductor light source having a spectrally broad, high power optical output
US5721750A (en) 1995-04-13 1998-02-24 Korea Advanced Institute Of Science And Technology Laser diode for optoelectronic integrated circuit and a process for preparing the same
US6198863B1 (en) 1995-10-06 2001-03-06 British Telecommunications Public Limited Company Optical filters
DE19613701A1 (de) 1996-03-29 1997-10-02 Hertz Inst Heinrich Integriert optischer Feldweitentransformator
US5859866A (en) 1997-02-07 1999-01-12 The Trustees Of Princeton University Photonic integration using a twin waveguide structure
US5852687A (en) 1997-07-09 1998-12-22 Trw Inc. Integrated optical time delay unit
US6381380B1 (en) 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
US6167073A (en) 1998-07-23 2000-12-26 Wisconsin Alumni Research Foundation High power laterally antiguided semiconductor light source with reduced transverse optical confinement

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CN103329367A (zh) * 2011-01-18 2013-09-25 索尼公司 半导体激光器件
CN103688428B (zh) * 2011-03-30 2016-10-26 英特尔公司 高效绝缘体上硅光栅耦合器
CN103688428A (zh) * 2011-03-30 2014-03-26 英特尔公司 高效绝缘体上硅光栅耦合器
TWI483015B (zh) * 2011-03-30 2015-05-01 Intel Corp 包含高效絕緣層上覆矽光柵耦合器之裝置及系統,以及其之製造方法
CN102611000B (zh) * 2012-03-23 2013-09-25 中国科学院长春光学精密机械与物理研究所 高效率非对称光场分布垂直腔面发射半导体激光器
CN102611000A (zh) * 2012-03-23 2012-07-25 中国科学院长春光学精密机械与物理研究所 高效率非对称光场分布垂直腔面发射半导体激光器
CN104204880A (zh) * 2012-03-30 2014-12-10 富士通株式会社 光元件、光发送元件、光接收元件、混合波导激光器、光发送装置
WO2014101877A1 (en) * 2012-12-31 2014-07-03 Huawei Technologies Co., Ltd. Silicon-on-insulator platform for integration of tunable laser arrays
CN107076928A (zh) * 2014-08-15 2017-08-18 康宁光电通信有限责任公司 用于耦合具有相异模场直径的波导的方法和相关设备、部件与系统
CN105826812A (zh) * 2015-01-27 2016-08-03 华为技术有限公司 可调激光器和调谐激光器的方法
CN105826812B (zh) * 2015-01-27 2020-04-21 华为技术有限公司 可调激光器和调谐激光器的方法
CN107710528A (zh) * 2015-06-25 2018-02-16 华为技术有限公司 快速可调谐的可变栅格激光器
CN107046229A (zh) * 2016-02-05 2017-08-15 南京威宁锐克信息技术有限公司 一种激光器阵列的制作方法及激光器阵列
CN113167968A (zh) * 2018-11-30 2021-07-23 三菱电机株式会社 光栅耦合器和集成式光栅耦合器系统
CN113167968B (zh) * 2018-11-30 2024-01-02 三菱电机株式会社 光栅耦合器和集成式光栅耦合器系统
CN114761845A (zh) * 2019-11-26 2022-07-15 思敏光子控股有限责任公司 用于光子集成电路的波导结构
US12292595B2 (en) 2019-11-26 2025-05-06 SMART Photonics Holding B.V. Waveguide structure for a photonic integrated circuit
US20210249840A1 (en) * 2020-02-12 2021-08-12 Sumitomo Electric Industries, Ltd. Semiconductor optical device and method for producing semiconductor optical device
US11735888B2 (en) * 2020-02-12 2023-08-22 Sumitomo Electric Industries, Ltd. Semiconductor optical device and method for producing semiconductor optical device
CN113126204A (zh) * 2021-04-13 2021-07-16 中山大学 一种可见光波段薄膜铌酸锂光栅耦合器及其制备方法
WO2023093052A1 (zh) * 2021-11-29 2023-06-01 青岛海信宽带多媒体技术有限公司 光模块
CN114156732A (zh) * 2021-11-29 2022-03-08 青岛海信宽带多媒体技术有限公司 一种激光芯片及光模块
CN114156732B (zh) * 2021-11-29 2025-07-04 青岛联智光通信技术有限公司 一种激光芯片及光模块

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Publication number Publication date
DE60212344D1 (de) 2006-07-27
EP1368870B1 (en) 2006-06-14
AU2002245278A1 (en) 2002-07-30
WO2002058251A3 (en) 2002-10-10
EP1368870A2 (en) 2003-12-10
DE60212344T2 (de) 2007-05-10
ATE330346T1 (de) 2006-07-15
KR20030093199A (ko) 2003-12-06
JP2004523113A (ja) 2004-07-29
US6483863B2 (en) 2002-11-19
CA2435330A1 (en) 2002-07-25
US20020097941A1 (en) 2002-07-25
EP1368870A4 (en) 2005-10-05
WO2002058251A2 (en) 2002-07-25

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