ATE330346T1 - Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiter - Google Patents
Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiterInfo
- Publication number
- ATE330346T1 ATE330346T1 AT02713427T AT02713427T ATE330346T1 AT E330346 T1 ATE330346 T1 AT E330346T1 AT 02713427 T AT02713427 T AT 02713427T AT 02713427 T AT02713427 T AT 02713427T AT E330346 T1 ATE330346 T1 AT E330346T1
- Authority
- AT
- Austria
- Prior art keywords
- waveguide
- mode
- laser device
- light
- electroabsorption
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26286301P | 2001-01-19 | 2001-01-19 | |
US09/891,639 US6483863B2 (en) | 2001-01-19 | 2001-06-26 | Asymmetric waveguide electroabsorption-modulated laser |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE330346T1 true ATE330346T1 (de) | 2006-07-15 |
Family
ID=26949512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02713427T ATE330346T1 (de) | 2001-01-19 | 2002-01-18 | Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiter |
Country Status (10)
Country | Link |
---|---|
US (1) | US6483863B2 (de) |
EP (1) | EP1368870B1 (de) |
JP (1) | JP2004523113A (de) |
KR (1) | KR20030093199A (de) |
CN (1) | CN1547791A (de) |
AT (1) | ATE330346T1 (de) |
AU (1) | AU2002245278A1 (de) |
CA (1) | CA2435330A1 (de) |
DE (1) | DE60212344T2 (de) |
WO (1) | WO2002058251A2 (de) |
Families Citing this family (65)
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US6381380B1 (en) * | 1998-06-24 | 2002-04-30 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US6795622B2 (en) * | 1998-06-24 | 2004-09-21 | The Trustess Of Princeton University | Photonic integrated circuits |
EP1381893A4 (de) * | 2001-04-27 | 2005-07-20 | Sarnoff Corp | Photonische integrierte schaltung (pic) und verfahren zu ihrer herstellung |
US6600847B2 (en) * | 2001-11-05 | 2003-07-29 | Quantum Photonics, Inc | Semiconductor optical device with improved efficiency and output beam characteristics |
US7035305B2 (en) * | 2002-05-10 | 2006-04-25 | Bookham Technology, Plc | Monolithically integrated high power laser optical device |
US6989284B2 (en) * | 2002-05-31 | 2006-01-24 | Intel Corporation | Fabrication of a waveguide taper through ion implantation |
US6956983B2 (en) * | 2002-05-31 | 2005-10-18 | Intel Corporation | Epitaxial growth for waveguide tapering |
US6975798B2 (en) * | 2002-07-05 | 2005-12-13 | Xponent Photonics Inc | Waveguides assembled for transverse-transfer of optical power |
US7184643B2 (en) | 2003-04-29 | 2007-02-27 | Xponent Photonics Inc | Multiple-core planar optical waveguides and methods of fabrication and use thereof |
US7283701B2 (en) * | 2003-08-01 | 2007-10-16 | Optium Corporation | Optical fiber transmission system with increased effective modal bandwidth transmission |
US7233709B2 (en) * | 2003-11-04 | 2007-06-19 | Avago Technologies Fiber Ip (Singapore) Ltd. Pte. | Electro-absorption modulator |
US20050105853A1 (en) * | 2003-11-13 | 2005-05-19 | Ansheng Liu | Method and apparatus for dual tapering an optical waveguide |
US7373048B2 (en) * | 2004-02-18 | 2008-05-13 | Trustees Of Princeton University | Polarization insensitive semiconductor optical amplifier |
WO2005099421A2 (en) * | 2004-04-14 | 2005-10-27 | The Trustees Of Princeton University | Monolithic wavelength stabilized asymmetric laser |
ATE488038T1 (de) * | 2004-04-15 | 2010-11-15 | Binoptics Corp | Photonische integrierte bauelemente mit mehreren ebenen |
WO2005106546A2 (en) * | 2004-04-15 | 2005-11-10 | Infinera Corporation | COOLERLESS AND FLOATING WAVELENGTH GRID PHOTONIC INTEGRATED CIRCUITS (PICs) FOR WDM TRANSMISSION NETWORKS |
US7425726B2 (en) * | 2004-05-19 | 2008-09-16 | Avago Technologies Fiber Ip Pte Ltd. | Electroabsorption modulators and methods of making the same |
KR100737348B1 (ko) | 2004-12-14 | 2007-07-09 | 한국전자통신연구원 | 전계흡수형 광 변조기 및 그 제조방법 |
US7164838B2 (en) | 2005-02-15 | 2007-01-16 | Xponent Photonics Inc | Multiple-core planar optical waveguides and methods of fabrication and use thereof |
TWI269083B (en) * | 2005-08-22 | 2006-12-21 | Univ Nat Central | Step-shaped optical waveguide structure |
US20070070309A1 (en) * | 2005-09-28 | 2007-03-29 | Miklos Stern | Color image projection arrangement and method employing electro-absorption modulated green laser system |
US7333689B2 (en) * | 2005-09-30 | 2008-02-19 | The Trustees Of Princeton University | Photonic integrated devices having reduced absorption loss |
US7343061B2 (en) | 2005-11-15 | 2008-03-11 | The Trustees Of Princeton University | Integrated photonic amplifier and detector |
US7826693B2 (en) | 2006-10-26 | 2010-11-02 | The Trustees Of Princeton University | Monolithically integrated reconfigurable optical add-drop multiplexer |
US7961765B2 (en) * | 2009-03-31 | 2011-06-14 | Intel Corporation | Narrow surface corrugated grating |
WO2011019887A2 (en) * | 2009-08-14 | 2011-02-17 | Massachusetts Institute Of Technology | Waveguide coupler having continuous three-dimensional tapering |
JP2012151210A (ja) * | 2011-01-18 | 2012-08-09 | Sony Corp | 半導体レーザ素子 |
JP5742344B2 (ja) * | 2011-03-20 | 2015-07-01 | 富士通株式会社 | 受光素子、光受信器及び光受信モジュール |
US8625942B2 (en) * | 2011-03-30 | 2014-01-07 | Intel Corporation | Efficient silicon-on-insulator grating coupler |
EP2544319B1 (de) * | 2011-07-08 | 2015-03-25 | Alcatel Lucent | Laserquelle für integrierte photonische Vorrichtungen |
CN102611000B (zh) * | 2012-03-23 | 2013-09-25 | 中国科学院长春光学精密机械与物理研究所 | 高效率非对称光场分布垂直腔面发射半导体激光器 |
JP5811273B2 (ja) * | 2012-03-30 | 2015-11-11 | 富士通株式会社 | 光素子、光送信素子、光受信素子、ハイブリッドレーザ、光送信装置 |
KR20130128651A (ko) * | 2012-05-17 | 2013-11-27 | 한국전자통신연구원 | 전계흡수형 변조기 레이저 |
US20140185980A1 (en) * | 2012-12-31 | 2014-07-03 | Futurewei Technologies, Inc. | Silicon-On-Insulator Platform for Integration of Tunable Laser Arrays |
US9059801B1 (en) | 2013-03-14 | 2015-06-16 | Emcore Corporation | Optical modulator |
US9306672B2 (en) * | 2013-03-14 | 2016-04-05 | Encore Corporation | Method of fabricating and operating an optical modulator |
US9306372B2 (en) * | 2013-03-14 | 2016-04-05 | Emcore Corporation | Method of fabricating and operating an optical modulator |
CN104242052B (zh) * | 2013-06-18 | 2018-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | 环形腔器件及其制作方法 |
EP2816679B1 (de) | 2013-06-21 | 2022-09-21 | Alcatel Lucent | Laseremissionsvorrichtung mit integriertem Lichtmodulator |
JP6173206B2 (ja) * | 2013-12-20 | 2017-08-02 | 三菱電機株式会社 | 光集積素子 |
JP6295762B2 (ja) * | 2014-03-25 | 2018-03-20 | 日本電気株式会社 | 光集積回路とその製造方法 |
EP3180643A1 (de) * | 2014-08-15 | 2017-06-21 | Corning Optical Communications LLC | Verfahren zur kopplung von wellenleitern mit verschiedenen modenfelddurchmessern und entsprechende vorrichtungen, komponenten und systeme |
US9564733B2 (en) * | 2014-09-15 | 2017-02-07 | Emcore Corporation | Method of fabricating and operating an optical modulator |
EP3051638A1 (de) * | 2015-01-27 | 2016-08-03 | Huawei Technologies Co., Ltd. | Abstimmbarer Laser und Verfahren zur Abstimmung eines Lasers |
WO2016206046A1 (zh) * | 2015-06-25 | 2016-12-29 | 华为技术有限公司 | 快速可调谐的可变栅格激光器 |
CN107046229A (zh) * | 2016-02-05 | 2017-08-15 | 南京威宁锐克信息技术有限公司 | 一种激光器阵列的制作方法及激光器阵列 |
US10074959B2 (en) | 2016-08-03 | 2018-09-11 | Emcore Corporation | Modulated laser source and methods of its fabrication and operation |
FR3061961B1 (fr) * | 2017-01-19 | 2019-04-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif photonique comportant un laser optiquement connecte a un guide d'onde silicium et procede de fabrication d'un tel dispositif photonique |
US10177854B2 (en) | 2017-03-20 | 2019-01-08 | Emcore Corporation | Modulated optical source and methods of its operation |
US11262605B2 (en) * | 2017-08-31 | 2022-03-01 | Lightwave Logic Inc. | Active region-less polymer modulator integrated on a common PIC platform and method |
CN110687694A (zh) * | 2018-07-04 | 2020-01-14 | 上海新微技术研发中心有限公司 | 电吸收调制器及半导体器件 |
US10921525B2 (en) * | 2018-11-30 | 2021-02-16 | Mitsubishi Electric Research Laboratories, Inc. | Grating coupler and integrated grating coupler system |
EP3696583B1 (de) * | 2019-02-15 | 2022-03-16 | EFFECT Photonics B.V. | Photonische integrierte schaltung mit verbesserter elektrischer isolation zwischen n-kontakten |
US10845550B1 (en) * | 2019-10-18 | 2020-11-24 | The Boeing Company | Input coupler for chip-scale laser receiver device |
US11231549B2 (en) * | 2019-11-14 | 2022-01-25 | Honeywell International Inc. | Integrated active/passive visible/UV modulator |
CN114641906A (zh) * | 2019-11-18 | 2022-06-17 | 电光-Ic股份有限公司 | 垂直集成电吸收调制激光器和制造方法 |
WO2021102224A1 (en) * | 2019-11-22 | 2021-05-27 | Raytheon BBN Technologies, Corp. | Hetergenous integration and electro-optic modulation of iii-nitride photonics on a silicon photonic platform |
GB2590075A (en) * | 2019-11-26 | 2021-06-23 | Smart Photonics Holding B V | Waveguide structure for a photonic integrated circuit |
JP7279658B2 (ja) * | 2020-02-12 | 2023-05-23 | 住友電気工業株式会社 | 半導体光素子およびその製造方法 |
US11287573B1 (en) * | 2020-10-19 | 2022-03-29 | Nexus Photonics Llc | Heterogeneously integrated photonic devices with improved optical coupling between waveguides |
EP4050741A1 (de) | 2021-02-26 | 2022-08-31 | EFFECT Photonics B.V. | Monolithische integrierte photonische schaltung und optoelektronisches system damit |
CN113126204A (zh) * | 2021-04-13 | 2021-07-16 | 中山大学 | 一种可见光波段薄膜铌酸锂光栅耦合器及其制备方法 |
CN114156732A (zh) * | 2021-11-29 | 2022-03-08 | 青岛海信宽带多媒体技术有限公司 | 一种激光芯片及光模块 |
US11719883B1 (en) * | 2022-02-18 | 2023-08-08 | Nexus Photonics Inc | Integrated GaAs active devices with improved optical coupling to dielectric waveguides |
CN116899914B (zh) * | 2023-09-14 | 2024-01-23 | 厦门优迅高速芯片有限公司 | Eml激光器筛选方法 |
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US5140149A (en) | 1989-03-10 | 1992-08-18 | Canon Kabushiki Kaisha | Optical apparatus using wavelength selective photocoupler |
US5039189A (en) | 1990-04-06 | 1991-08-13 | Lockheed Missiles & Space Company, Inc. | Optical signal distribution network and method of converting independent optical/electrical signals |
US5208878A (en) | 1990-11-28 | 1993-05-04 | Siemens Aktiengesellschaft | Monolithically integrated laser-diode-waveguide combination |
DE59203842D1 (de) | 1992-01-20 | 1995-11-02 | Siemens Ag | Abstimmbare Laserdiode. |
US5355386A (en) | 1992-11-17 | 1994-10-11 | Gte Laboratories Incorporated | Monolithically integrated semiconductor structure and method of fabricating such structure |
JP2765793B2 (ja) | 1993-03-16 | 1998-06-18 | シャープ株式会社 | モード分離素子および光磁気ディスク用ピックアップ |
JP2606079B2 (ja) | 1993-06-25 | 1997-04-30 | 日本電気株式会社 | 光半導体素子 |
US5663824A (en) | 1993-11-02 | 1997-09-02 | Lucent Technologies Inc. | Optical modulators as monolithically integrated optical isolators |
DE59500334D1 (de) | 1994-01-19 | 1997-07-31 | Siemens Ag | Abstimmbare Laserdiode |
US5844929A (en) | 1994-02-24 | 1998-12-01 | British Telecommunications Public Limited Company | Optical device with composite passive and tapered active waveguide regions |
JPH07326820A (ja) | 1994-05-30 | 1995-12-12 | Mitsubishi Electric Corp | 波長可変半導体レーザ装置 |
US5574742A (en) * | 1994-05-31 | 1996-11-12 | Lucent Technologies Inc. | Tapered beam expander waveguide integrated with a diode laser |
US5623363A (en) | 1995-02-27 | 1997-04-22 | Lucent Technologies Inc. | Semiconductor light source having a spectrally broad, high power optical output |
US5721750A (en) | 1995-04-13 | 1998-02-24 | Korea Advanced Institute Of Science And Technology | Laser diode for optoelectronic integrated circuit and a process for preparing the same |
US6198863B1 (en) | 1995-10-06 | 2001-03-06 | British Telecommunications Public Limited Company | Optical filters |
DE19613701A1 (de) | 1996-03-29 | 1997-10-02 | Hertz Inst Heinrich | Integriert optischer Feldweitentransformator |
US5859866A (en) | 1997-02-07 | 1999-01-12 | The Trustees Of Princeton University | Photonic integration using a twin waveguide structure |
US5852687A (en) | 1997-07-09 | 1998-12-22 | Trw Inc. | Integrated optical time delay unit |
US6381380B1 (en) | 1998-06-24 | 2002-04-30 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
US6167073A (en) | 1998-07-23 | 2000-12-26 | Wisconsin Alumni Research Foundation | High power laterally antiguided semiconductor light source with reduced transverse optical confinement |
-
2001
- 2001-06-26 US US09/891,639 patent/US6483863B2/en not_active Expired - Lifetime
-
2002
- 2002-01-18 DE DE60212344T patent/DE60212344T2/de not_active Expired - Fee Related
- 2002-01-18 CA CA002435330A patent/CA2435330A1/en not_active Abandoned
- 2002-01-18 EP EP02713427A patent/EP1368870B1/de not_active Expired - Lifetime
- 2002-01-18 AU AU2002245278A patent/AU2002245278A1/en not_active Abandoned
- 2002-01-18 AT AT02713427T patent/ATE330346T1/de not_active IP Right Cessation
- 2002-01-18 KR KR10-2003-7009612A patent/KR20030093199A/ko not_active Application Discontinuation
- 2002-01-18 CN CNA028059972A patent/CN1547791A/zh active Pending
- 2002-01-18 JP JP2002558622A patent/JP2004523113A/ja active Pending
- 2002-01-18 WO PCT/US2002/001348 patent/WO2002058251A2/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN1547791A (zh) | 2004-11-17 |
JP2004523113A (ja) | 2004-07-29 |
KR20030093199A (ko) | 2003-12-06 |
EP1368870B1 (de) | 2006-06-14 |
EP1368870A2 (de) | 2003-12-10 |
DE60212344T2 (de) | 2007-05-10 |
DE60212344D1 (de) | 2006-07-27 |
US6483863B2 (en) | 2002-11-19 |
WO2002058251A2 (en) | 2002-07-25 |
CA2435330A1 (en) | 2002-07-25 |
AU2002245278A1 (en) | 2002-07-30 |
US20020097941A1 (en) | 2002-07-25 |
EP1368870A4 (de) | 2005-10-05 |
WO2002058251A3 (en) | 2002-10-10 |
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Legal Events
Date | Code | Title | Description |
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |