KR20030093199A - 비대칭 도파관 전자흡수-피변조 레이저 - Google Patents

비대칭 도파관 전자흡수-피변조 레이저 Download PDF

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Publication number
KR20030093199A
KR20030093199A KR10-2003-7009612A KR20037009612A KR20030093199A KR 20030093199 A KR20030093199 A KR 20030093199A KR 20037009612 A KR20037009612 A KR 20037009612A KR 20030093199 A KR20030093199 A KR 20030093199A
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KR
South Korea
Prior art keywords
waveguide
type doped
light
mode
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7009612A
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English (en)
Korean (ko)
Inventor
스티븐 알. 포레스트
밀린드 알. 고하일
파벨 브이. 스튜덴코브
Original Assignee
더 트러스티즈 오브 프린스턴 유니버시티
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 더 트러스티즈 오브 프린스턴 유니버시티 filed Critical 더 트러스티즈 오브 프린스턴 유니버시티
Publication of KR20030093199A publication Critical patent/KR20030093199A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
KR10-2003-7009612A 2001-01-19 2002-01-18 비대칭 도파관 전자흡수-피변조 레이저 Ceased KR20030093199A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26286301P 2001-01-19 2001-01-19
US60/262,863 2001-01-19
US09/891,639 2001-06-26
US09/891,639 US6483863B2 (en) 2001-01-19 2001-06-26 Asymmetric waveguide electroabsorption-modulated laser
PCT/US2002/001348 WO2002058251A2 (en) 2001-01-19 2002-01-18 Asymmetric waveguide electroabsorption-modulated laser

Publications (1)

Publication Number Publication Date
KR20030093199A true KR20030093199A (ko) 2003-12-06

Family

ID=26949512

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7009612A Ceased KR20030093199A (ko) 2001-01-19 2002-01-18 비대칭 도파관 전자흡수-피변조 레이저

Country Status (10)

Country Link
US (1) US6483863B2 (enExample)
EP (1) EP1368870B1 (enExample)
JP (1) JP2004523113A (enExample)
KR (1) KR20030093199A (enExample)
CN (1) CN1547791A (enExample)
AT (1) ATE330346T1 (enExample)
AU (1) AU2002245278A1 (enExample)
CA (1) CA2435330A1 (enExample)
DE (1) DE60212344T2 (enExample)
WO (1) WO2002058251A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20130128651A (ko) * 2012-05-17 2013-11-27 한국전자통신연구원 전계흡수형 변조기 레이저

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KR20130128651A (ko) * 2012-05-17 2013-11-27 한국전자통신연구원 전계흡수형 변조기 레이저

Also Published As

Publication number Publication date
DE60212344D1 (de) 2006-07-27
EP1368870B1 (en) 2006-06-14
CN1547791A (zh) 2004-11-17
AU2002245278A1 (en) 2002-07-30
WO2002058251A3 (en) 2002-10-10
EP1368870A2 (en) 2003-12-10
DE60212344T2 (de) 2007-05-10
ATE330346T1 (de) 2006-07-15
JP2004523113A (ja) 2004-07-29
US6483863B2 (en) 2002-11-19
CA2435330A1 (en) 2002-07-25
US20020097941A1 (en) 2002-07-25
EP1368870A4 (en) 2005-10-05
WO2002058251A2 (en) 2002-07-25

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