DE69404107T2 - Polarisationsunabhängiger optischer Halbleiterverstärker - Google Patents

Polarisationsunabhängiger optischer Halbleiterverstärker

Info

Publication number
DE69404107T2
DE69404107T2 DE69404107T DE69404107T DE69404107T2 DE 69404107 T2 DE69404107 T2 DE 69404107T2 DE 69404107 T DE69404107 T DE 69404107T DE 69404107 T DE69404107 T DE 69404107T DE 69404107 T2 DE69404107 T2 DE 69404107T2
Authority
DE
Germany
Prior art keywords
polarization
optical semiconductor
independent optical
semiconductor amplifier
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69404107T
Other languages
English (en)
Other versions
DE69404107D1 (de
Inventor
Michiyo Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69404107D1 publication Critical patent/DE69404107D1/de
Publication of DE69404107T2 publication Critical patent/DE69404107T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69404107T 1993-10-04 1994-09-29 Polarisationsunabhängiger optischer Halbleiterverstärker Expired - Lifetime DE69404107T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27133093A JP3226070B2 (ja) 1993-10-04 1993-10-04 半導体光素子

Publications (2)

Publication Number Publication Date
DE69404107D1 DE69404107D1 (de) 1997-08-14
DE69404107T2 true DE69404107T2 (de) 1998-01-08

Family

ID=17498554

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404107T Expired - Lifetime DE69404107T2 (de) 1993-10-04 1994-09-29 Polarisationsunabhängiger optischer Halbleiterverstärker

Country Status (4)

Country Link
US (1) US5488507A (de)
EP (1) EP0647001B1 (de)
JP (1) JP3226070B2 (de)
DE (1) DE69404107T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69428187T2 (de) * 1994-05-06 2002-06-20 Commissariat Energie Atomique Optisch gesteuerte Lichtmodulator-Vorrichtung
JP3303631B2 (ja) * 1995-01-04 2002-07-22 キヤノン株式会社 半導体量子井戸構造
US6332835B1 (en) 1997-11-20 2001-12-25 Canon Kabushiki Kaisha Polishing apparatus with transfer arm for moving polished object without drying it
US6075254A (en) * 1998-02-06 2000-06-13 The United States Of America As Represented By The Secretary Of The Army Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors
JP2001053392A (ja) * 1999-06-03 2001-02-23 Fujitsu Ltd 偏波無依存型半導体光増幅器
FR2813449B1 (fr) * 2000-08-22 2003-01-17 Cit Alcatel Dispositif optique amplificateur
JP4789320B2 (ja) * 2000-12-01 2011-10-12 富士通株式会社 半導体光増幅器
TW525306B (en) * 2001-04-19 2003-03-21 Univ Nat Taiwan Technique using multi-layer quantum well of different widths for increasing the light emitting bandwidth of semiconductor photoelectric device
US7116851B2 (en) * 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
US7672546B2 (en) 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
AU2002334906A1 (en) * 2001-10-09 2003-04-22 Infinera Corporation Transmitter photonic integrated circuits (txpic) and optical transport networks employing txpics
US7751658B2 (en) * 2001-10-09 2010-07-06 Infinera Corporation Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning
US20080044128A1 (en) * 2001-10-09 2008-02-21 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs
US7747114B2 (en) * 2002-10-08 2010-06-29 Infinera Corporation Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same
US20040196540A1 (en) * 2003-02-28 2004-10-07 Lealman Ian Francis Semiconductor optical amplifiers
GB0306479D0 (en) * 2003-03-21 2003-04-23 Corning O T I Spa Lasers and methods of making them
KR100584413B1 (ko) * 2003-10-13 2006-05-26 삼성전자주식회사 반도체 광증폭기를 이용한 광대역 광원
JP4794505B2 (ja) 2007-06-15 2011-10-19 富士通株式会社 半導体光増幅装置、半導体光増幅システム及び半導体光集積素子
DE102007044439B4 (de) * 2007-09-18 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit Quantentopfstruktur
JP2009152261A (ja) * 2007-12-19 2009-07-09 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
JP5323553B2 (ja) * 2009-03-26 2013-10-23 古河電気工業株式会社 半導体光増幅素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831656B2 (ja) * 1988-03-30 1996-03-27 日本電気株式会社 光増幅器
JPH0831657B2 (ja) * 1988-04-07 1996-03-27 日本電気株式会社 光増幅器
US4952792A (en) * 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells
JP2864462B2 (ja) * 1989-12-08 1999-03-03 キヤノン株式会社 半導体光素子及びその使用方法
JP2976001B2 (ja) * 1990-05-22 1999-11-10 日本電信電話株式会社 光半導体装置
US5090790A (en) * 1990-06-29 1992-02-25 At&T Bell Laboratories Polarization-independent semiconductor waveguide
DE69104573T2 (de) * 1990-08-03 1995-04-20 Philips Nv Optischer Verstärker.
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
US5296721A (en) * 1992-07-31 1994-03-22 Hughes Aircraft Company Strained interband resonant tunneling negative resistance diode

Also Published As

Publication number Publication date
JP3226070B2 (ja) 2001-11-05
EP0647001A1 (de) 1995-04-05
JPH07106712A (ja) 1995-04-21
EP0647001B1 (de) 1997-07-09
DE69404107D1 (de) 1997-08-14
US5488507A (en) 1996-01-30

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