DE602007013472D1 - Hochdichte speichervorrichtung mit planarer magnetdomänenwand und herstellungsverfahren dafür - Google Patents
Hochdichte speichervorrichtung mit planarer magnetdomänenwand und herstellungsverfahren dafürInfo
- Publication number
- DE602007013472D1 DE602007013472D1 DE602007013472T DE602007013472T DE602007013472D1 DE 602007013472 D1 DE602007013472 D1 DE 602007013472D1 DE 602007013472 T DE602007013472 T DE 602007013472T DE 602007013472 T DE602007013472 T DE 602007013472T DE 602007013472 D1 DE602007013472 D1 DE 602007013472D1
- Authority
- DE
- Germany
- Prior art keywords
- shift register
- domain wall
- magnetic
- register structures
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53165—Magnetic memory device
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/694,183 US7514271B2 (en) | 2007-03-30 | 2007-03-30 | Method of forming high density planar magnetic domain wall memory |
PCT/US2007/024798 WO2008121134A1 (en) | 2007-03-30 | 2007-12-04 | High density planar magnetic domain wall memory apparatus and method of forming the same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007013472D1 true DE602007013472D1 (de) | 2011-05-05 |
Family
ID=39794015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007013472T Active DE602007013472D1 (de) | 2007-03-30 | 2007-12-04 | Hochdichte speichervorrichtung mit planarer magnetdomänenwand und herstellungsverfahren dafür |
Country Status (7)
Country | Link |
---|---|
US (3) | US7514271B2 (de) |
EP (1) | EP2140458B1 (de) |
JP (1) | JP5063775B2 (de) |
KR (1) | KR101120808B1 (de) |
AT (1) | ATE503252T1 (de) |
DE (1) | DE602007013472D1 (de) |
WO (1) | WO2008121134A1 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130105885A (ko) | 2005-01-05 | 2013-09-26 | 에프-스타 비오테크놀로기쉐 포르슝스 운드 엔트비클룽스게스.엠.베.하. | 상보성 결정부위와 다른 분자의 부위에서 처리된 결합성을 갖는 합성 면역글로불린 영역 |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
US8314024B2 (en) | 2008-12-19 | 2012-11-20 | Unity Semiconductor Corporation | Device fabrication |
KR100837411B1 (ko) * | 2006-12-06 | 2008-06-12 | 삼성전자주식회사 | 자구벽 이동을 이용한 데이터 저장 장치 및 그의 동작 방법 |
US7514271B2 (en) * | 2007-03-30 | 2009-04-07 | International Business Machines Corporation | Method of forming high density planar magnetic domain wall memory |
KR101435516B1 (ko) * | 2008-02-14 | 2014-08-29 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보저장장치 및 그 동작방법 |
EP2113255A1 (de) | 2008-05-02 | 2009-11-04 | f-star Biotechnologische Forschungs- und Entwicklungsges.m.b.H. | Zytotoxisches Immunglobulin |
US8102691B2 (en) * | 2008-06-24 | 2012-01-24 | Seagate Technology Llc | Magnetic tracks with domain wall storage anchors |
US7876595B2 (en) * | 2008-09-19 | 2011-01-25 | Seagate Technology Llc | Magnetic shift register as counter and data storage device |
US7969774B2 (en) * | 2009-03-10 | 2011-06-28 | Micron Technology, Inc. | Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices |
US8331125B2 (en) * | 2009-08-26 | 2012-12-11 | International Business Machines Corporation | Array architecture and operation for high density magnetic racetrack memory system |
US8164940B2 (en) * | 2009-12-15 | 2012-04-24 | Hitachi Global Storage Technologies Netherlands, B.V. | Read/write structures for a three dimensional memory |
US20110186946A1 (en) * | 2010-02-04 | 2011-08-04 | Qualcomm Incorporated | Magnetic Tunnel Junction with Domain Wall Pinning |
US8279662B2 (en) * | 2010-11-11 | 2012-10-02 | Seagate Technology Llc | Multi-bit magnetic memory with independently programmable free layer domains |
JP5615310B2 (ja) * | 2012-03-16 | 2014-10-29 | 株式会社東芝 | 磁気メモリ |
US20140003118A1 (en) * | 2012-07-02 | 2014-01-02 | International Business Machines Corporation | Magnetic tunnel junction self-alignment in magnetic domain wall shift register memory devices |
US8923039B2 (en) | 2012-11-06 | 2014-12-30 | International Business Machines Corporation | Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction |
US8772889B2 (en) | 2012-11-20 | 2014-07-08 | International Business Machines Corporation | Magnetic domain wall shift register memory device readout |
US9048410B2 (en) | 2013-05-31 | 2015-06-02 | Micron Technology, Inc. | Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls |
JP6172850B2 (ja) | 2013-07-30 | 2017-08-02 | 東芝メモリ株式会社 | 磁気記憶素子、磁気記憶装置、磁気メモリ、および磁気記憶素子の駆動方法 |
US9123878B2 (en) | 2013-09-09 | 2015-09-01 | Kabushiki Kaisha Toshiba | Magnetic memory device utilizing magnetic domain wall motion |
JP6104774B2 (ja) * | 2013-09-19 | 2017-03-29 | 株式会社東芝 | 磁壁移動型メモリおよびその書き込み方法 |
US10026431B2 (en) * | 2013-11-01 | 2018-07-17 | Carnegie Mellon University | Magnetic shift register |
WO2015171620A1 (en) * | 2014-05-05 | 2015-11-12 | University Of South Florida | Physically unclonable function based on domain wall memory and method of use |
US20160064060A1 (en) * | 2014-09-02 | 2016-03-03 | Nanyang Technological University | Method of forming a magnetic domain wall in a nanowire |
WO2017074263A1 (en) * | 2015-10-26 | 2017-05-04 | Nanyang Technological University | Magnetic memory devices and methods of operating the same |
CN106533431A (zh) * | 2016-11-03 | 2017-03-22 | 南京大学 | 一种低能耗金属基逻辑电路 |
JP2018157019A (ja) | 2017-03-16 | 2018-10-04 | 東芝メモリ株式会社 | 磁気記憶装置 |
CN107611255B (zh) * | 2017-09-11 | 2019-09-10 | 北京航空航天大学 | 一种高密度磁性存储器件 |
JP2019057545A (ja) | 2017-09-19 | 2019-04-11 | 東芝メモリ株式会社 | 磁気記憶装置 |
US10056126B1 (en) | 2017-10-27 | 2018-08-21 | Honeywell International Inc. | Magnetic tunnel junction based memory device |
US10374148B1 (en) | 2018-02-08 | 2019-08-06 | Sandisk Technologies Llc | Multi-resistance MRAM |
US10381548B1 (en) | 2018-02-08 | 2019-08-13 | Sandisk Technologies Llc | Multi-resistance MRAM |
KR20210018696A (ko) | 2019-08-09 | 2021-02-18 | 삼성전자주식회사 | 자기 메모리 장치 |
KR20210021225A (ko) | 2019-08-16 | 2021-02-25 | 삼성전자주식회사 | 자기 메모리 장치 |
JP2021149769A (ja) | 2020-03-23 | 2021-09-27 | キオクシア株式会社 | メモリシステムおよびシフトレジスタ型メモリ |
US11751492B2 (en) | 2021-09-24 | 2023-09-05 | International Business Machines Corporation | Embedded memory pillar |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4253161A (en) * | 1979-10-15 | 1981-02-24 | Sperry Corporation | Generator/shift register/detector for cross-tie wall memory system |
US5341261A (en) * | 1991-08-26 | 1994-08-23 | International Business Machines Corporation | Magnetoresistive sensor having multilayer thin film structure |
US5583727A (en) * | 1995-05-15 | 1996-12-10 | International Business Machines Corporation | Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor |
JP2002170377A (ja) * | 2000-09-22 | 2002-06-14 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP4656720B2 (ja) * | 2000-09-25 | 2011-03-23 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6538919B1 (en) * | 2000-11-08 | 2003-03-25 | International Business Machines Corporation | Magnetic tunnel junctions using ferrimagnetic materials |
JP4726292B2 (ja) * | 2000-11-14 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6473328B1 (en) * | 2001-08-30 | 2002-10-29 | Micron Technology, Inc. | Three-dimensional magnetic memory array with a minimal number of access conductors therein |
US6518588B1 (en) * | 2001-10-17 | 2003-02-11 | International Business Machines Corporation | Magnetic random access memory with thermally stable magnetic tunnel junction cells |
WO2003098632A2 (en) * | 2002-05-16 | 2003-11-27 | Nova Research, Inc. | Methods of fabricating magnetoresistive memory devices |
JP3920804B2 (ja) * | 2003-04-04 | 2007-05-30 | 松下電器産業株式会社 | 半導体記憶装置 |
US6834005B1 (en) * | 2003-06-10 | 2004-12-21 | International Business Machines Corporation | Shiftable magnetic shift register and method of using the same |
US6898132B2 (en) * | 2003-06-10 | 2005-05-24 | International Business Machines Corporation | System and method for writing to a magnetic shift register |
US6920062B2 (en) * | 2003-10-14 | 2005-07-19 | International Business Machines Corporation | System and method for reading data stored on a magnetic shift register |
JP4413603B2 (ja) * | 2003-12-24 | 2010-02-10 | 株式会社東芝 | 磁気記憶装置及び磁気情報の書込み方法 |
US7236386B2 (en) * | 2004-12-04 | 2007-06-26 | International Business Machines Corporation | System and method for transferring data to and from a magnetic shift register with a shiftable data column |
WO2006115275A1 (ja) * | 2005-04-26 | 2006-11-02 | Kyoto University | Mramおよびその書き込み方法 |
JP2007324171A (ja) * | 2006-05-30 | 2007-12-13 | Fujitsu Ltd | 磁気メモリ装置及びその製造方法 |
JP4969981B2 (ja) * | 2006-10-03 | 2012-07-04 | 株式会社東芝 | 磁気記憶装置 |
US7514271B2 (en) * | 2007-03-30 | 2009-04-07 | International Business Machines Corporation | Method of forming high density planar magnetic domain wall memory |
-
2007
- 2007-03-30 US US11/694,183 patent/US7514271B2/en active Active
- 2007-12-04 KR KR1020097021070A patent/KR101120808B1/ko active IP Right Grant
- 2007-12-04 DE DE602007013472T patent/DE602007013472D1/de active Active
- 2007-12-04 JP JP2010502067A patent/JP5063775B2/ja not_active Expired - Fee Related
- 2007-12-04 AT AT07867608T patent/ATE503252T1/de not_active IP Right Cessation
- 2007-12-04 WO PCT/US2007/024798 patent/WO2008121134A1/en active Application Filing
- 2007-12-04 EP EP07867608A patent/EP2140458B1/de active Active
-
2008
- 2008-06-10 US US12/136,089 patent/US8009453B2/en active Active
- 2008-06-10 US US12/136,091 patent/US8023305B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8023305B2 (en) | 2011-09-20 |
EP2140458A1 (de) | 2010-01-06 |
WO2008121134A1 (en) | 2008-10-09 |
JP5063775B2 (ja) | 2012-10-31 |
EP2140458B1 (de) | 2011-03-23 |
JP2010524233A (ja) | 2010-07-15 |
KR20100002255A (ko) | 2010-01-06 |
US20080243972A1 (en) | 2008-10-02 |
US20080239785A1 (en) | 2008-10-02 |
US7514271B2 (en) | 2009-04-07 |
ATE503252T1 (de) | 2011-04-15 |
US20080239784A1 (en) | 2008-10-02 |
EP2140458A4 (de) | 2010-05-05 |
US8009453B2 (en) | 2011-08-30 |
KR101120808B1 (ko) | 2012-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602007013472D1 (de) | Hochdichte speichervorrichtung mit planarer magnetdomänenwand und herstellungsverfahren dafür | |
TW200737185A (en) | Magnetic memory device and method for driving the same | |
CN100573707C (zh) | 利用磁畴牵引的磁存储器件 | |
TW200625322A (en) | System and method for transferring data to and from a magnetic shift register with a shiftable data column | |
JP2010524233A5 (de) | ||
US7372757B2 (en) | Magnetic memory device with moving magnetic domain walls | |
ATE540407T1 (de) | Magnetspeicher mit magnettunnelübergang | |
US7924593B2 (en) | Information storage devices and methods of operating the same | |
JP2012519963A5 (de) | ||
DE602005022180D1 (de) | Mit spin-dämmung erweitertes element mit magnetoresistiver wirkung und dieses verwendender magnetspeicher | |
WO2003036734A1 (en) | Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method | |
WO2003036734A3 (fr) | Element a effet de magnetoresistance, element de memoire magnetique, dispositif de memoire magnetique et procede de fabrication correspondant | |
DE602006001687D1 (de) | Magnetoresistive Vorrichtung und Magnetspeicher damit | |
FR2894679B1 (fr) | Noyau magnetique miniature, capteur le comportant et procede pour le fabriquer | |
WO2015124950A3 (en) | Quantum technology | |
DE60227145D1 (de) | Informationsspeichergerät mit Halbleitersonde | |
GB2495453A (en) | Magnetic spin shift register memory | |
DE102005035165B8 (de) | Magnetischer Speicher mit statischem magnetischen Verschiebungsfeld | |
WO2008120482A1 (ja) | 磁気ランダムアクセスメモリ | |
JP2017514122A5 (de) | ||
SG151210A1 (en) | Magnetoresistive sensor memory with multiferroic material | |
DE60323801D1 (de) | Magnetische Speicheranordnung, Herstellungsverfahren und Schreib/Leseverfahren | |
DE60214374D1 (de) | Magnetoresistiver Speicher mit weichmagnetischen Referenzschichte | |
WO2009057504A1 (ja) | 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ、及びその初期化方法 | |
WO2009037910A1 (ja) | 磁気ランダムアクセスメモリ、その書き込み方法、及び磁気抵抗効果素子 |