DE60227145D1 - Informationsspeichergerät mit Halbleitersonde - Google Patents

Informationsspeichergerät mit Halbleitersonde

Info

Publication number
DE60227145D1
DE60227145D1 DE60227145T DE60227145T DE60227145D1 DE 60227145 D1 DE60227145 D1 DE 60227145D1 DE 60227145 T DE60227145 T DE 60227145T DE 60227145 T DE60227145 T DE 60227145T DE 60227145 D1 DE60227145 D1 DE 60227145D1
Authority
DE
Germany
Prior art keywords
storage device
information storage
semiconductor probe
probe
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60227145T
Other languages
English (en)
Inventor
Seung-Bum Hong
Jong Up Jeon
Hyun-Jung Shin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60227145D1 publication Critical patent/DE60227145D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1409—Heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/08—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
DE60227145T 2001-11-23 2002-08-20 Informationsspeichergerät mit Halbleitersonde Expired - Lifetime DE60227145D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0073290A KR100438832B1 (ko) 2001-11-23 2001-11-23 반도체 탐침을 이용한 정보 저장 장치

Publications (1)

Publication Number Publication Date
DE60227145D1 true DE60227145D1 (de) 2008-07-31

Family

ID=19716237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60227145T Expired - Lifetime DE60227145D1 (de) 2001-11-23 2002-08-20 Informationsspeichergerät mit Halbleitersonde

Country Status (5)

Country Link
US (1) US6854648B2 (de)
EP (1) EP1315157B1 (de)
JP (1) JP3854569B2 (de)
KR (1) KR100438832B1 (de)
DE (1) DE60227145D1 (de)

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US7260051B1 (en) * 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US20020138301A1 (en) * 2001-03-22 2002-09-26 Thanos Karras Integration of a portal into an application service provider data archive and/or web based viewer
KR100499127B1 (ko) * 2002-07-05 2005-07-04 삼성전자주식회사 고밀도 정보저장매체 및 그 제조방법 및 정보저장장치 및이를 이용한 정보 기록 및 재생 및 소거방법
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
JP4102345B2 (ja) * 2003-08-25 2008-06-18 三星電子株式会社 強誘電膜を含む記録媒体、それを用いた不揮発性メモリ素子、および、その不揮発性メモリ素子のデータ記録／再生方法
KR100552701B1 (ko) 2003-11-24 2006-02-20 삼성전자주식회사 전하-쌍극자가 결합된 정보 저장 매체 및 그 제조 방법
US20050243660A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F Methods for erasing bit cells in a high density data storage device
US20050243592A1 (en) * 2004-04-16 2005-11-03 Rust Thomas F High density data storage device having eraseable bit cells
US20060076487A1 (en) * 2004-10-08 2006-04-13 Samsung Electronics Co., Ltd. Semiconductor probe, method of manufacturing the same, and method and apparatus for analyzing semiconductor surface using semiconductor probe
US20070041237A1 (en) * 2005-07-08 2007-02-22 Nanochip, Inc. Media for writing highly resolved domains
US7463573B2 (en) * 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US20070008867A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with a lubricant layer comprised of a field of polymer chains
US20070008866A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. Methods for writing and reading in a polarity-dependent memory switch media
US20070008865A1 (en) * 2005-07-08 2007-01-11 Nanochip, Inc. High density data storage devices with polarity-dependent memory switching media
US7185440B2 (en) * 2005-07-18 2007-03-06 Seagate Technology Llc Sensing contact probe
KR100718154B1 (ko) 2006-02-20 2007-05-14 삼성전자주식회사 정보 미디어 및 이를 이용하는 정보의 기록 및 재생 장치
US20080001075A1 (en) * 2006-06-15 2008-01-03 Nanochip, Inc. Memory stage for a probe storage device
US20080174918A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for writing and reading a charge-trap media with a probe tip
US20080175033A1 (en) * 2007-01-19 2008-07-24 Nanochip, Inc. Method and system for improving domain stability in a ferroelectric media
US20080232228A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Systems and methods of writing and reading a ferro-electric media with a probe tip
US20080233672A1 (en) * 2007-03-20 2008-09-25 Nanochip, Inc. Method of integrating mems structures and cmos structures using oxide fusion bonding
US20080318086A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Surface-treated ferroelectric media for use in systems for storing information
US20080316897A1 (en) * 2007-06-19 2008-12-25 Nanochip, Inc. Methods of treating a surface of a ferroelectric media
US7626846B2 (en) * 2007-07-16 2009-12-01 Nanochip, Inc. Method and media for improving ferroelectric domain stability in an information storage device
US20090129246A1 (en) * 2007-11-21 2009-05-21 Nanochip, Inc. Environmental management of a probe storage device
US20090201015A1 (en) * 2008-02-12 2009-08-13 Nanochip, Inc. Method and device for detecting ferroelectric polarization
US20090213492A1 (en) * 2008-02-22 2009-08-27 Nanochip, Inc. Method of improving stability of domain polarization in ferroelectric thin films
US20090294028A1 (en) * 2008-06-03 2009-12-03 Nanochip, Inc. Process for fabricating high density storage device with high-temperature media
US20100002563A1 (en) * 2008-07-01 2010-01-07 Nanochip, Inc. Media with tetragonally-strained recording layer having improved surface roughness
US20100039729A1 (en) * 2008-08-14 2010-02-18 Nanochip, Inc. Package with integrated magnets for electromagnetically-actuated probe-storage device
US20100039919A1 (en) * 2008-08-15 2010-02-18 Nanochip, Inc. Cantilever Structure for Use in Seek-and-Scan Probe Storage
US20100085863A1 (en) * 2008-10-07 2010-04-08 Nanochip, Inc. Retuning of ferroelectric media built-in-bias
RU167816U1 (ru) * 2016-06-28 2017-01-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский технологический университет" Устройство плотной записи информации на электретном носителе

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US2922986A (en) * 1956-04-24 1960-01-26 Bell Telephone Labor Inc Ferroelectric memory device
DE3041414C2 (de) * 1979-04-13 1983-07-21 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Signalaufzeichnungs- und -wiedergabevorrichtung
JPS5727447A (en) * 1980-07-21 1982-02-13 Toshiba Corp Signal recording and reproducing system
EP0095521B1 (de) * 1982-06-02 1986-10-01 Kabushiki Kaisha Toshiba Detektor für elektrostatische Ladungen
JPH05182261A (ja) * 1991-12-27 1993-07-23 Ricoh Co Ltd 情報記憶装置
JPH05347035A (ja) * 1992-06-15 1993-12-27 Mitsubishi Electric Corp 情報記録・再生装置
JPH06243518A (ja) * 1993-02-15 1994-09-02 Canon Inc 記録再生装置
JPH08297870A (ja) * 1995-04-26 1996-11-12 Canon Inc 情報処理装置および情報処理方法
JPH09120593A (ja) * 1995-08-23 1997-05-06 Sony Corp 記録再生装置
JPH09282723A (ja) * 1996-04-11 1997-10-31 Matsushita Electric Ind Co Ltd 情報記録装置、情報記録方法及び情報再生方法
JPH1040599A (ja) * 1996-07-25 1998-02-13 Tdk Corp 記録媒体および記録再生方法
US5985404A (en) * 1996-08-28 1999-11-16 Tdk Corporation Recording medium, method of making, and information processing apparatus
JPH1081951A (ja) * 1996-09-03 1998-03-31 Canon Inc 記録媒体とその製造方法、及び該記録媒体を用いた情報記録再生装置
JP4160135B2 (ja) * 1997-07-31 2008-10-01 三星電子株式会社 強誘電体薄膜を用いるディスク装置
US6477132B1 (en) * 1998-08-19 2002-11-05 Canon Kabushiki Kaisha Probe and information recording/reproduction apparatus using the same
KR100331444B1 (ko) 1999-08-31 2002-04-09 윤종용 강유전체 박막을 이용한 초고밀도 정보 저장 장치

Also Published As

Publication number Publication date
KR20030042580A (ko) 2003-06-02
US20030098347A1 (en) 2003-05-29
KR100438832B1 (ko) 2004-07-05
EP1315157A3 (de) 2004-05-26
EP1315157A2 (de) 2003-05-28
US6854648B2 (en) 2005-02-15
JP3854569B2 (ja) 2006-12-06
JP2003281794A (ja) 2003-10-03
EP1315157B1 (de) 2008-06-18

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Legal Events

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8364 No opposition during term of opposition