DE602007005610D1 - Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung - Google Patents

Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung

Info

Publication number
DE602007005610D1
DE602007005610D1 DE602007005610T DE602007005610T DE602007005610D1 DE 602007005610 D1 DE602007005610 D1 DE 602007005610D1 DE 602007005610 T DE602007005610 T DE 602007005610T DE 602007005610 T DE602007005610 T DE 602007005610T DE 602007005610 D1 DE602007005610 D1 DE 602007005610D1
Authority
DE
Germany
Prior art keywords
semiconductor device
producing
mold
made therefor
unsealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007005610T
Other languages
German (de)
English (en)
Inventor
Yoshitsugu Morita
Minoru Isshiki
Hiroshi Ueki
Tomoko Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Publication of DE602007005610D1 publication Critical patent/DE602007005610D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/18Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/50Removing moulded articles
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • C08L83/06Polysiloxanes containing silicon bound to oxygen-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602007005610T 2006-02-23 2007-02-14 Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung Active DE602007005610D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006046872A JP5207591B2 (ja) 2006-02-23 2006-02-23 半導体装置の製造方法および半導体装置
PCT/JP2007/053131 WO2007099823A1 (en) 2006-02-23 2007-02-14 Method of manufacturing a semiconductor device and a semiconductor device produced thereby

Publications (1)

Publication Number Publication Date
DE602007005610D1 true DE602007005610D1 (de) 2010-05-12

Family

ID=38016612

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007005610T Active DE602007005610D1 (de) 2006-02-23 2007-02-14 Verfahren zur herstellung einer halbleitervorrichtung und dadurch hergestellte halbleitervorrichtung

Country Status (10)

Country Link
US (1) US8802506B2 (https=)
EP (1) EP1986832B1 (https=)
JP (1) JP5207591B2 (https=)
KR (1) KR101349619B1 (https=)
CN (1) CN101389461B (https=)
AT (1) ATE462545T1 (https=)
DE (1) DE602007005610D1 (https=)
MY (1) MY149696A (https=)
TW (1) TW200741906A (https=)
WO (1) WO2007099823A1 (https=)

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JP5285846B2 (ja) * 2006-09-11 2013-09-11 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5306592B2 (ja) * 2006-12-04 2013-10-02 東レ・ダウコーニング株式会社 硬化性エポキシ樹脂組成物、硬化物、およびその用途
JP5547369B2 (ja) * 2007-09-28 2014-07-09 東レ・ダウコーニング株式会社 硬化性液状エポキシ樹脂組成物およびその硬化物
JP5422109B2 (ja) 2007-10-16 2014-02-19 東レ・ダウコーニング株式会社 硬化性シリコーン組成物およびその硬化物
US8427269B1 (en) * 2009-06-29 2013-04-23 VI Chip, Inc. Encapsulation method and apparatus for electronic modules
WO2012053526A1 (ja) * 2010-10-20 2012-04-26 旭化成イーマテリアルズ株式会社 酸化物ナノ粒子反応生成物及びシリコーン組成物
US9679783B2 (en) 2011-08-11 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Molding wafer chamber
DE102011082157A1 (de) * 2011-09-06 2013-03-07 Osram Opto Semiconductors Gmbh Presswerkzeug und Verfahrenzum Herstellen eines Silikonelements
CN103987785B (zh) * 2011-11-25 2017-03-29 Lg化学株式会社 可固化组合物
TWI505551B (zh) * 2012-05-28 2015-10-21 Wistron Neweb Corp 天線的形成方法及壓合頭
US20150221578A1 (en) * 2014-02-05 2015-08-06 Infineon Technologies Ag Semiconductor package and method for producing a semiconductor
US10020262B2 (en) * 2016-06-30 2018-07-10 Intel Corporation High resolution solder resist material for silicon bridge application
EP3580790B1 (en) 2017-02-08 2024-01-24 Elkem Silicones USA Corp. Secondary battery pack with improved thermal management
US11028269B2 (en) 2017-05-19 2021-06-08 Shin-Etsu Chemical Co., Ltd Silicone-modified epoxy resin composition and semiconductor device
CN108770212B (zh) * 2018-07-12 2023-07-25 深圳智慧者机器人科技有限公司 Pcb板自动包胶装置
EP3734065B1 (en) * 2019-04-30 2023-06-07 memetis GmbH Actuator assembly
CN114502676A (zh) * 2019-09-23 2022-05-13 Ppg工业俄亥俄公司 可固化组合物
CN112873810A (zh) * 2019-11-29 2021-06-01 复盛应用科技股份有限公司 高尔夫球杆头盖片制造方法及模具
US11729915B1 (en) 2022-03-22 2023-08-15 Tactotek Oy Method for manufacturing a number of electrical nodes, electrical node module, electrical node, and multilayer structure

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JP4676735B2 (ja) * 2004-09-22 2011-04-27 東レ・ダウコーニング株式会社 光半導体装置の製造方法および光半導体装置
JP5166677B2 (ja) * 2005-03-15 2013-03-21 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP4931366B2 (ja) * 2005-04-27 2012-05-16 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品
JP5004433B2 (ja) * 2005-04-27 2012-08-22 東レ・ダウコーニング株式会社 硬化性シリコーン組成物およびその硬化物
JP5248012B2 (ja) * 2006-12-25 2013-07-31 東レ・ダウコーニング株式会社 硬化性シリコーン組成物
JP5238157B2 (ja) * 2006-12-25 2013-07-17 東レ・ダウコーニング株式会社 硬化性シリコーン組成物および電子部品

Also Published As

Publication number Publication date
MY149696A (en) 2013-09-30
ATE462545T1 (de) 2010-04-15
CN101389461B (zh) 2011-02-09
US20100213623A1 (en) 2010-08-26
TW200741906A (en) 2007-11-01
EP1986832B1 (en) 2010-03-31
US8802506B2 (en) 2014-08-12
CN101389461A (zh) 2009-03-18
KR101349619B1 (ko) 2014-02-14
EP1986832A1 (en) 2008-11-05
JP5207591B2 (ja) 2013-06-12
KR20080108089A (ko) 2008-12-11
JP2007224146A (ja) 2007-09-06
WO2007099823A1 (en) 2007-09-07

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