DE602006004100D1 - Einkristalliner Diamant und Verfahren zu seiner Herstellung - Google Patents

Einkristalliner Diamant und Verfahren zu seiner Herstellung

Info

Publication number
DE602006004100D1
DE602006004100D1 DE602006004100T DE602006004100T DE602006004100D1 DE 602006004100 D1 DE602006004100 D1 DE 602006004100D1 DE 602006004100 T DE602006004100 T DE 602006004100T DE 602006004100 T DE602006004100 T DE 602006004100T DE 602006004100 D1 DE602006004100 D1 DE 602006004100D1
Authority
DE
Germany
Prior art keywords
preparation
crystalline diamond
diamond
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006004100T
Other languages
English (en)
Inventor
Kiichi Meguro
Yoshiyuki Yamamoto
Takahiro Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36809674&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE602006004100(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE602006004100D1 publication Critical patent/DE602006004100D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
DE602006004100T 2005-04-15 2006-04-07 Einkristalliner Diamant und Verfahren zu seiner Herstellung Active DE602006004100D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005117948 2005-04-15
JP2006060511A JP5002982B2 (ja) 2005-04-15 2006-03-07 単結晶ダイヤモンドの製造方法

Publications (1)

Publication Number Publication Date
DE602006004100D1 true DE602006004100D1 (de) 2009-01-22

Family

ID=36809674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006004100T Active DE602006004100D1 (de) 2005-04-15 2006-04-07 Einkristalliner Diamant und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (2) US7655208B2 (de)
EP (1) EP1712661B2 (de)
JP (1) JP5002982B2 (de)
CN (1) CN1865534B (de)
DE (1) DE602006004100D1 (de)
TW (1) TWI367859B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006048957A1 (ja) * 2004-11-05 2006-05-11 Sumitomo Electric Industries, Ltd. 単結晶ダイヤモンド
US20100038653A1 (en) 2007-01-22 2010-02-18 Geoffrey Alan Scarsbrook Diamond electronic devices and methods for their manufacture
GB0704516D0 (en) 2007-03-08 2007-04-18 Element Six Ltd Diamond
JP5168563B2 (ja) * 2008-07-16 2013-03-21 住友電気工業株式会社 ダイヤモンド単結晶基板及びその製造方法
JP5239574B2 (ja) * 2008-07-18 2013-07-17 住友電気工業株式会社 気相合成法で作製されたダイヤモンド単結晶基板及びその製造方法
GB0900771D0 (en) 2009-01-16 2009-03-04 Element Six Ltd Diamond
WO2014168053A1 (ja) 2013-04-09 2014-10-16 住友電気工業株式会社 単結晶ダイヤモンドおよびダイヤモンド工具
KR101731736B1 (ko) 2013-04-30 2017-04-28 스미토모덴키고교가부시키가이샤 단결정 다이아몬드 및 다이아몬드 공구
JP6112485B2 (ja) * 2013-09-19 2017-04-12 国立研究開発法人産業技術総合研究所 単結晶ダイヤモンドの製造方法
EP3575450A1 (de) * 2014-07-22 2019-12-04 Sumitomo Electric Industries, Ltd. Einkristalliner diamant
SG10201505413VA (en) * 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
CN111256830B (zh) * 2020-03-30 2022-08-23 湖州中芯半导体科技有限公司 一种用cvd金刚石单晶检测偏振光的方法
CN112048760A (zh) * 2020-09-08 2020-12-08 宁波晶钻工业科技有限公司 单晶金刚石外延生长方法、单晶金刚石及其片状籽晶
CN114836829A (zh) * 2022-04-27 2022-08-02 河南天璇半导体科技有限责任公司 一种mpcvd法生产单晶金刚石的方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658891B2 (ja) 1987-03-12 1994-08-03 住友電気工業株式会社 薄膜単結晶ダイヤモンド基板
JP2730145B2 (ja) 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
US5127983A (en) 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US6162412A (en) * 1990-08-03 2000-12-19 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
JP2662608B2 (ja) 1990-09-21 1997-10-15 科学技術庁無機材質研究所長 ダイヤモンド単結晶膜の合成法
JPH0640797A (ja) † 1992-04-23 1994-02-15 Sumitomo Electric Ind Ltd ダイヤモンドの加工方法
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
DE69535861D1 (de) * 1994-06-24 2008-11-27 Sumitomo Electric Industries Wafer und sein Herstellungsverfahren
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
JP4132687B2 (ja) 2000-03-31 2008-08-13 日新製鋼株式会社 加工性、スポット溶接性に優れた耐熱プレコート鋼鈑
US6806812B1 (en) * 2000-04-26 2004-10-19 Micron Technology, Inc. Automated antenna trim for transmitting and receiving semiconductor devices
RU2288302C2 (ru) * 2000-06-15 2006-11-27 Элемент Сикс (Пти) Лтд. Монокристаллический алмаз, полученный методом химического осаждения из газовой фазы, и способ его получения
CN1210445C (zh) * 2000-06-15 2005-07-13 六号元素(控股)公司 厚的单晶金刚石层、其制备方法和由该层生产的宝石
JP3624375B2 (ja) * 2001-10-16 2005-03-02 ユーディナデバイス株式会社 半導体装置の製造方法
UA81614C2 (ru) * 2001-11-07 2008-01-25 Карнеги Инститьюшн Ов Вашингтон Устройство для изготовления алмазов, узел удержания образца (варианты) и способ изготовления алмазов (варианты)
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
JP4374823B2 (ja) * 2002-03-22 2009-12-02 住友電気工業株式会社 ダイヤモンド単結晶の製造方法およびダイヤモンド単結晶基板の製造方法
US7172655B2 (en) * 2002-09-06 2007-02-06 Daniel James Twitchen Colored diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
GB0303860D0 (en) * 2003-02-19 2003-03-26 Element Six Ltd CVD diamond in wear applications
US7115241B2 (en) * 2003-07-14 2006-10-03 Carnegie Institution Of Washington Ultrahard diamonds and method of making thereof
GB0318215D0 (en) 2003-08-04 2003-09-03 Element Six Ltd Diamond microelectrodes
KR101240785B1 (ko) * 2003-12-12 2013-03-07 엘리멘트 식스 리미티드 화학적 증착 다이아몬드에 마크를 통합시키는 방법
JP4385764B2 (ja) * 2003-12-26 2009-12-16 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法
JP4697514B2 (ja) * 2004-01-16 2011-06-08 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法およびダイヤモンド単結晶基板
US7481879B2 (en) * 2004-01-16 2009-01-27 Sumitomo Electric Industries, Ltd. Diamond single crystal substrate manufacturing method and diamond single crystal substrate
JP4736338B2 (ja) * 2004-03-24 2011-07-27 住友電気工業株式会社 ダイヤモンド単結晶基板
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
EP1708255A3 (de) * 2005-03-28 2010-08-25 Sumitomo Electric Industries, Ltd. Diamantsubstrat und Herstellungsverfahren dafür
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法

Also Published As

Publication number Publication date
CN1865534B (zh) 2011-11-30
US20060231015A1 (en) 2006-10-19
EP1712661B2 (de) 2015-04-08
JP5002982B2 (ja) 2012-08-15
TWI367859B (en) 2012-07-11
US20100111812A1 (en) 2010-05-06
CN1865534A (zh) 2006-11-22
EP1712661A1 (de) 2006-10-18
US7655208B2 (en) 2010-02-02
JP2006315942A (ja) 2006-11-24
EP1712661B1 (de) 2008-12-10
TW200702299A (en) 2007-01-16

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