DE602005019124D1 - Herstellung einer Durchgangselektrode - Google Patents
Herstellung einer DurchgangselektrodeInfo
- Publication number
- DE602005019124D1 DE602005019124D1 DE602005019124T DE602005019124T DE602005019124D1 DE 602005019124 D1 DE602005019124 D1 DE 602005019124D1 DE 602005019124 T DE602005019124 T DE 602005019124T DE 602005019124 T DE602005019124 T DE 602005019124T DE 602005019124 D1 DE602005019124 D1 DE 602005019124D1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05023—Disposition the whole internal layer protruding from the surface
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05144—Gold [Au] as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05164—Palladium [Pd] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/016—Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0733—Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Micromachines (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004191488A JP3751625B2 (ja) | 2004-06-29 | 2004-06-29 | 貫通電極の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005019124D1 true DE602005019124D1 (de) | 2010-03-18 |
Family
ID=34941762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005019124T Active DE602005019124D1 (de) | 2004-06-29 | 2005-06-24 | Herstellung einer Durchgangselektrode |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060001173A1 (de) |
EP (1) | EP1612859B1 (de) |
JP (1) | JP3751625B2 (de) |
KR (1) | KR101117618B1 (de) |
CN (1) | CN100461357C (de) |
DE (1) | DE602005019124D1 (de) |
TW (1) | TWI381482B (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100620810B1 (ko) * | 2005-03-07 | 2006-09-07 | 삼성전자주식회사 | Mems 소자 패키지 및 그 제조방법 |
US7633167B2 (en) * | 2005-09-29 | 2009-12-15 | Nec Electronics Corporation | Semiconductor device and method for manufacturing same |
TWI324800B (en) | 2005-12-28 | 2010-05-11 | Sanyo Electric Co | Method for manufacturing semiconductor device |
US7704800B2 (en) * | 2006-11-06 | 2010-04-27 | Broadcom Corporation | Semiconductor assembly with one metal layer after base metal removal |
JP5154819B2 (ja) * | 2007-04-03 | 2013-02-27 | 新光電気工業株式会社 | 基板及びその製造方法 |
JP5193503B2 (ja) * | 2007-06-04 | 2013-05-08 | 新光電気工業株式会社 | 貫通電極付き基板及びその製造方法 |
JP5137059B2 (ja) * | 2007-06-20 | 2013-02-06 | 新光電気工業株式会社 | 電子部品用パッケージ及びその製造方法と電子部品装置 |
TW200919593A (en) * | 2007-10-18 | 2009-05-01 | Asia Pacific Microsystems Inc | Elements and modules with micro caps and wafer level packaging method thereof |
KR100986296B1 (ko) * | 2008-09-05 | 2010-10-07 | 삼성전기주식회사 | 반도체 패키지 및 그 제조 방법 |
JP5453763B2 (ja) * | 2008-10-27 | 2014-03-26 | 大日本印刷株式会社 | 貫通電極基板の製造方法 |
US20120314390A1 (en) * | 2010-03-03 | 2012-12-13 | Mutual-Tek Industries Co., Ltd. | Multilayer circuit board |
JP5423572B2 (ja) | 2010-05-07 | 2014-02-19 | セイコーエプソン株式会社 | 配線基板、圧電発振器、ジャイロセンサー、配線基板の製造方法 |
JP2012004166A (ja) * | 2010-06-14 | 2012-01-05 | Fujitsu Ltd | 配線基板、配線基板組立体及び半導体装置 |
CN101916754B (zh) * | 2010-06-29 | 2012-08-29 | 香港应用科技研究院有限公司 | 通孔和通孔形成方法以及通孔填充方法 |
JP5619542B2 (ja) * | 2010-09-08 | 2014-11-05 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体基板の処理方法及び半導体装置の製造方法 |
US10526198B2 (en) | 2011-03-04 | 2020-01-07 | Texas Instruments Incorporated | Infrared sensor design using an epoxy film as an infrared absorption layer |
JP5842929B2 (ja) * | 2011-11-22 | 2016-01-13 | 富士通株式会社 | 電子部品およびその製造方法 |
US8987871B2 (en) * | 2012-05-31 | 2015-03-24 | Stmicroelectronics Pte Ltd. | Cap for a microelectromechanical system device with electromagnetic shielding, and method of manufacture |
JP5874690B2 (ja) | 2012-09-05 | 2016-03-02 | 株式会社デンソー | 半導体装置の製造方法 |
JP2015177382A (ja) | 2014-03-15 | 2015-10-05 | キヤノン株式会社 | 素子電極が貫通配線と繋がったデバイス、及びその製造方法 |
SG11201807926PA (en) | 2016-03-24 | 2018-10-30 | Agency Science Tech & Res | A through silicon interposer wafer and method of manufacturing the same |
CN108811354A (zh) * | 2017-04-28 | 2018-11-13 | 鹏鼎控股(深圳)股份有限公司 | 电路板及其制作方法 |
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DE3008143C2 (de) * | 1980-03-04 | 1982-04-08 | Ruwel-Werke Spezialfabrik für Leiterplatten GmbH, 4170 Geldern | Verfahren zum Herstellen von gedruckten Leiterplatten mit Lochungen, deren Wandungen metallisiert sind |
JPH01258457A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | 半導体集積回路の実装構造およびその製造方法 |
JPH05243735A (ja) | 1992-03-03 | 1993-09-21 | Hitachi Chem Co Ltd | 多層配線板の製造法 |
JPH07307565A (ja) | 1994-05-10 | 1995-11-21 | Hitachi Chem Co Ltd | 配線板の製造方法 |
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JP3724110B2 (ja) * | 1997-04-24 | 2005-12-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
US6039889A (en) * | 1999-01-12 | 2000-03-21 | Fujitsu Limited | Process flows for formation of fine structure layer pairs on flexible films |
JP3681155B2 (ja) * | 1999-12-22 | 2005-08-10 | 新光電気工業株式会社 | 電子部品の実装構造、電子部品装置、電子部品の実装方法及び電子部品装置の製造方法 |
US6605551B2 (en) * | 2000-12-08 | 2003-08-12 | Intel Corporation | Electrocoating process to form a dielectric layer in an organic substrate to reduce loop inductance |
US6441486B1 (en) * | 2001-03-19 | 2002-08-27 | Texas Instruments Incorporated | BGA substrate via structure |
JP3860000B2 (ja) * | 2001-09-07 | 2006-12-20 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP3904484B2 (ja) | 2002-06-19 | 2007-04-11 | 新光電気工業株式会社 | シリコン基板のスルーホールプラギング方法 |
JP2004095849A (ja) * | 2002-08-30 | 2004-03-25 | Fujikura Ltd | 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法 |
JP3910907B2 (ja) * | 2002-10-29 | 2007-04-25 | 新光電気工業株式会社 | キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置 |
KR100691725B1 (ko) * | 2002-12-11 | 2007-03-12 | 다이니폰 인사츠 가부시키가이샤 | 다층 배선기판 및 그 제조 방법 |
-
2004
- 2004-06-29 JP JP2004191488A patent/JP3751625B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-23 TW TW094120930A patent/TWI381482B/zh not_active IP Right Cessation
- 2005-06-24 EP EP05253943A patent/EP1612859B1/de not_active Ceased
- 2005-06-24 DE DE602005019124T patent/DE602005019124D1/de active Active
- 2005-06-27 US US11/167,750 patent/US20060001173A1/en not_active Abandoned
- 2005-06-28 KR KR1020050056136A patent/KR101117618B1/ko not_active IP Right Cessation
- 2005-06-29 CN CNB2005100811765A patent/CN100461357C/zh not_active Expired - Fee Related
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2006
- 2006-08-07 US US11/499,947 patent/US7498259B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200603237A (en) | 2006-01-16 |
US20060267210A1 (en) | 2006-11-30 |
US7498259B2 (en) | 2009-03-03 |
CN1716558A (zh) | 2006-01-04 |
EP1612859A3 (de) | 2006-02-01 |
KR101117618B1 (ko) | 2012-03-07 |
CN100461357C (zh) | 2009-02-11 |
EP1612859B1 (de) | 2010-01-27 |
KR20060048594A (ko) | 2006-05-18 |
JP3751625B2 (ja) | 2006-03-01 |
TWI381482B (zh) | 2013-01-01 |
US20060001173A1 (en) | 2006-01-05 |
JP2006013330A (ja) | 2006-01-12 |
EP1612859A2 (de) | 2006-01-04 |
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