DE602004024071D1 - Verfahren für das herstellen eines halbleiterbauelements - Google Patents
Verfahren für das herstellen eines halbleiterbauelementsInfo
- Publication number
- DE602004024071D1 DE602004024071D1 DE602004024071T DE602004024071T DE602004024071D1 DE 602004024071 D1 DE602004024071 D1 DE 602004024071D1 DE 602004024071 T DE602004024071 T DE 602004024071T DE 602004024071 T DE602004024071 T DE 602004024071T DE 602004024071 D1 DE602004024071 D1 DE 602004024071D1
- Authority
- DE
- Germany
- Prior art keywords
- etching process
- layer
- acid
- semiconductor
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000010276 construction Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000002253 acid Substances 0.000 abstract 2
- 239000012459 cleaning agent Substances 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- C11D2111/22—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03102115 | 2003-07-11 | ||
| EP03103918 | 2003-10-23 | ||
| PCT/IB2004/051166 WO2005006410A1 (en) | 2003-07-11 | 2004-07-08 | Method of manufacturing a semiconductor device and an apparatus for use in such a method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602004024071D1 true DE602004024071D1 (de) | 2009-12-24 |
Family
ID=34066514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602004024071T Active DE602004024071D1 (de) | 2003-07-11 | 2004-07-08 | Verfahren für das herstellen eines halbleiterbauelements |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7625826B2 (de) |
| EP (1) | EP1647045B1 (de) |
| JP (1) | JP2007519222A (de) |
| KR (1) | KR20060030111A (de) |
| AT (1) | ATE448564T1 (de) |
| DE (1) | DE602004024071D1 (de) |
| TW (1) | TW200507082A (de) |
| WO (1) | WO2005006410A1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123721A (ja) * | 2005-10-31 | 2007-05-17 | Rohm Co Ltd | 光電変換装置の製造方法および光電変換装置 |
| US9704719B2 (en) * | 2013-07-16 | 2017-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods to mitigate nitride precipitates |
| TWI629720B (zh) | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4116714A (en) * | 1977-08-15 | 1978-09-26 | International Business Machines Corporation | Post-polishing semiconductor surface cleaning process |
| JPH028034A (ja) * | 1988-03-08 | 1990-01-11 | Hercules Inc | 光重合性組成物を注型材料として用いるタイヤ接地面の型取り方法 |
| JP2895167B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置およびその製造方法 |
| JP3135185B2 (ja) * | 1993-03-19 | 2001-02-13 | 三菱電機株式会社 | 半導体エッチング液，半導体エッチング方法，及びＧａＡｓ面の判定方法 |
| US5772784A (en) * | 1994-11-14 | 1998-06-30 | Yieldup International | Ultra-low particle semiconductor cleaner |
| DE69533823D1 (de) * | 1994-12-29 | 2005-01-05 | St Microelectronics Inc | Elektrische Verbindungsstruktur auf einer integrierten Schaltungsanordnung mit einem Zapfen mit vergrössertem Kopf |
| JPH0945654A (ja) * | 1995-07-28 | 1997-02-14 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置 |
| JPH0969509A (ja) * | 1995-09-01 | 1997-03-11 | Matsushita Electron Corp | 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法 |
| JP2836562B2 (ja) * | 1996-02-08 | 1998-12-14 | 日本電気株式会社 | 半導体ウェハのウェット処理方法 |
| WO1997050019A1 (en) | 1996-06-25 | 1997-12-31 | Cfm Technologies, Inc. | Improved method for sulfuric acid resist stripping |
| US6384001B2 (en) * | 1997-03-03 | 2002-05-07 | Micron Technology, Inc. | Dilute cleaning composition |
| US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| KR100287173B1 (ko) * | 1998-03-13 | 2001-06-01 | 윤종용 | 포토레지스트제거방법및이들을이용한반도체장치의제조방법 |
| US6126806A (en) * | 1998-12-02 | 2000-10-03 | International Business Machines Corporation | Enhancing copper electromigration resistance with indium and oxygen lamination |
| JP3415549B2 (ja) * | 1999-03-15 | 2003-06-09 | 松下電器産業株式会社 | 電子デバイスの洗浄方法及びその製造方法 |
| JP3693875B2 (ja) * | 2000-01-26 | 2005-09-14 | Ｎｅｃエレクトロニクス株式会社 | 回路製造方法 |
| US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| TW508691B (en) * | 2001-12-21 | 2002-11-01 | Nanya Technology Corp | Cleaning method after etching metal layer |
| US6964929B1 (en) * | 2002-05-02 | 2005-11-15 | Cypress Semiconductor Corporation | Method of forming a narrow gate, and product produced thereby |
| US6541321B1 (en) * | 2002-05-14 | 2003-04-01 | Advanced Micro Devices, Inc. | Method of making transistors with gate insulation layers of differing thickness |
| US7078351B2 (en) * | 2003-02-10 | 2006-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist intensive patterning and processing |
-
2004
- 2004-07-08 DE DE602004024071T patent/DE602004024071D1/de active Active
- 2004-07-08 JP JP2006520073A patent/JP2007519222A/ja active Pending
- 2004-07-08 US US10/563,924 patent/US7625826B2/en not_active Expired - Fee Related
- 2004-07-08 AT AT04744527T patent/ATE448564T1/de not_active IP Right Cessation
- 2004-07-08 KR KR1020067000607A patent/KR20060030111A/ko not_active Application Discontinuation
- 2004-07-08 EP EP04744527A patent/EP1647045B1/de not_active Not-in-force
- 2004-07-08 WO PCT/IB2004/051166 patent/WO2005006410A1/en active Application Filing
- 2004-07-09 TW TW093120689A patent/TW200507082A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005006410A1 (en) | 2005-01-20 |
| KR20060030111A (ko) | 2006-04-07 |
| ATE448564T1 (de) | 2009-11-15 |
| US7625826B2 (en) | 2009-12-01 |
| EP1647045B1 (de) | 2009-11-11 |
| TW200507082A (en) | 2005-02-16 |
| EP1647045A1 (de) | 2006-04-19 |
| JP2007519222A (ja) | 2007-07-12 |
| US20060153331A1 (en) | 2006-07-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |