ATE448564T1 - Verfahren für das herstellen eines halbleiterbauelements - Google Patents

Verfahren für das herstellen eines halbleiterbauelements

Info

Publication number
ATE448564T1
ATE448564T1 AT04744527T AT04744527T ATE448564T1 AT E448564 T1 ATE448564 T1 AT E448564T1 AT 04744527 T AT04744527 T AT 04744527T AT 04744527 T AT04744527 T AT 04744527T AT E448564 T1 ATE448564 T1 AT E448564T1
Authority
AT
Austria
Prior art keywords
etching process
layer
acid
residues
semiconductor
Prior art date
Application number
AT04744527T
Other languages
English (en)
Inventor
Ingrid Rink
Reinoldus Vroom
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE448564T1 publication Critical patent/ATE448564T1/de

Links

Classifications

    • H10P70/273
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/08Acids
    • H10P70/20
    • H10P70/234
    • H10W20/031
    • H10W20/081
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT04744527T 2003-07-11 2004-07-08 Verfahren für das herstellen eines halbleiterbauelements ATE448564T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP03102115 2003-07-11
EP03103918 2003-10-23
PCT/IB2004/051166 WO2005006410A1 (en) 2003-07-11 2004-07-08 Method of manufacturing a semiconductor device and an apparatus for use in such a method

Publications (1)

Publication Number Publication Date
ATE448564T1 true ATE448564T1 (de) 2009-11-15

Family

ID=34066514

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04744527T ATE448564T1 (de) 2003-07-11 2004-07-08 Verfahren für das herstellen eines halbleiterbauelements

Country Status (8)

Country Link
US (1) US7625826B2 (de)
EP (1) EP1647045B1 (de)
JP (1) JP2007519222A (de)
KR (1) KR20060030111A (de)
AT (1) ATE448564T1 (de)
DE (1) DE602004024071D1 (de)
TW (1) TW200507082A (de)
WO (1) WO2005006410A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123721A (ja) * 2005-10-31 2007-05-17 Rohm Co Ltd 光電変換装置の製造方法および光電変換装置
US9704719B2 (en) * 2013-07-16 2017-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods to mitigate nitride precipitates
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
JPH028034A (ja) * 1988-03-08 1990-01-11 Hercules Inc 光重合性組成物を注型材料として用いるタイヤ接地面の型取り方法
JP2895167B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置およびその製造方法
JP3135185B2 (ja) * 1993-03-19 2001-02-13 三菱電機株式会社 半導体エッチング液,半導体エッチング方法,及びGaAs面の判定方法
US5772784A (en) * 1994-11-14 1998-06-30 Yieldup International Ultra-low particle semiconductor cleaner
DE69533823D1 (de) * 1994-12-29 2005-01-05 St Microelectronics Inc Elektrische Verbindungsstruktur auf einer integrierten Schaltungsanordnung mit einem Zapfen mit vergrössertem Kopf
JPH0945654A (ja) * 1995-07-28 1997-02-14 Dainippon Screen Mfg Co Ltd 基板洗浄装置
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
JP2836562B2 (ja) * 1996-02-08 1998-12-14 日本電気株式会社 半導体ウェハのウェット処理方法
WO1997050019A1 (en) 1996-06-25 1997-12-31 Cfm Technologies, Inc. Improved method for sulfuric acid resist stripping
US6384001B2 (en) * 1997-03-03 2002-05-07 Micron Technology, Inc. Dilute cleaning composition
US6240933B1 (en) * 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
KR100287173B1 (ko) * 1998-03-13 2001-06-01 윤종용 포토레지스트제거방법및이들을이용한반도체장치의제조방법
US6126806A (en) * 1998-12-02 2000-10-03 International Business Machines Corporation Enhancing copper electromigration resistance with indium and oxygen lamination
JP3415549B2 (ja) * 1999-03-15 2003-06-09 松下電器産業株式会社 電子デバイスの洗浄方法及びその製造方法
JP3693875B2 (ja) * 2000-01-26 2005-09-14 Necエレクトロニクス株式会社 回路製造方法
US20030045098A1 (en) * 2001-08-31 2003-03-06 Applied Materials, Inc. Method and apparatus for processing a wafer
TW508691B (en) * 2001-12-21 2002-11-01 Nanya Technology Corp Cleaning method after etching metal layer
US6964929B1 (en) * 2002-05-02 2005-11-15 Cypress Semiconductor Corporation Method of forming a narrow gate, and product produced thereby
US6541321B1 (en) 2002-05-14 2003-04-01 Advanced Micro Devices, Inc. Method of making transistors with gate insulation layers of differing thickness
US7078351B2 (en) * 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing

Also Published As

Publication number Publication date
EP1647045B1 (de) 2009-11-11
DE602004024071D1 (de) 2009-12-24
US7625826B2 (en) 2009-12-01
WO2005006410A1 (en) 2005-01-20
EP1647045A1 (de) 2006-04-19
KR20060030111A (ko) 2006-04-07
JP2007519222A (ja) 2007-07-12
TW200507082A (en) 2005-02-16
US20060153331A1 (en) 2006-07-13

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