DE602004015713D1 - Optischer Abschwächer, Strahlsystem, damit ausgerüsteter lithographischer Apparat und Methode zur Herstellung einer Vorrichtung - Google Patents

Optischer Abschwächer, Strahlsystem, damit ausgerüsteter lithographischer Apparat und Methode zur Herstellung einer Vorrichtung

Info

Publication number
DE602004015713D1
DE602004015713D1 DE602004015713T DE602004015713T DE602004015713D1 DE 602004015713 D1 DE602004015713 D1 DE 602004015713D1 DE 602004015713 T DE602004015713 T DE 602004015713T DE 602004015713 T DE602004015713 T DE 602004015713T DE 602004015713 D1 DE602004015713 D1 DE 602004015713D1
Authority
DE
Germany
Prior art keywords
manufacturing
lithographic apparatus
apparatus equipped
optical attenuator
blasting system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004015713T
Other languages
English (en)
Inventor
Cornelis Petrus Andreas Luijkx
Vadim Yevgenyevich Banine
Hako Botma
Duijnhoven Martinus Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE602004015713D1 publication Critical patent/DE602004015713D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70191Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70066Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
DE602004015713T 2003-12-31 2004-12-21 Optischer Abschwächer, Strahlsystem, damit ausgerüsteter lithographischer Apparat und Methode zur Herstellung einer Vorrichtung Active DE602004015713D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/748,849 US7030958B2 (en) 2003-12-31 2003-12-31 Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method

Publications (1)

Publication Number Publication Date
DE602004015713D1 true DE602004015713D1 (de) 2008-09-25

Family

ID=34620639

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004015713T Active DE602004015713D1 (de) 2003-12-31 2004-12-21 Optischer Abschwächer, Strahlsystem, damit ausgerüsteter lithographischer Apparat und Methode zur Herstellung einer Vorrichtung

Country Status (8)

Country Link
US (1) US7030958B2 (de)
EP (2) EP1555573B1 (de)
JP (2) JP4309836B2 (de)
KR (1) KR100695985B1 (de)
CN (1) CN1641414B (de)
DE (1) DE602004015713D1 (de)
SG (1) SG113028A1 (de)
TW (1) TWI259934B (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050153064A1 (en) * 2004-01-14 2005-07-14 Asml Holding N.V. Method of covering clear aperture of optic during deposition of glue protection layer
JP2006049527A (ja) * 2004-08-03 2006-02-16 Canon Inc 反射屈折型投影光学系及び当該反射屈折型投影光学系を有する露光装置、デバイス製造方法
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
US7369216B2 (en) * 2004-10-15 2008-05-06 Asml Netherlands B.V. Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby
US7145634B2 (en) * 2004-12-01 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7362413B2 (en) * 2004-12-09 2008-04-22 Asml Netherlands B.V. Uniformity correction for lithographic apparatus
US7088527B2 (en) * 2004-12-28 2006-08-08 Asml Holding N.V. Uniformity correction system having light leak and shadow compensation
US20060139784A1 (en) * 2004-12-28 2006-06-29 Asml Holding N.V. Uniformity correction system having light leak compensation
US7265815B2 (en) * 2005-05-19 2007-09-04 Asml Holding N.V. System and method utilizing an illumination beam adjusting system
US7233010B2 (en) * 2005-05-20 2007-06-19 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7924406B2 (en) * 2005-07-13 2011-04-12 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method having switch device for two illumination channels
US7417715B2 (en) * 2005-07-13 2008-08-26 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method using two patterning devices
US7671970B2 (en) * 2005-07-13 2010-03-02 Asml Netherlands B.V. Stage apparatus with two patterning devices, lithographic apparatus and device manufacturing method skipping an exposure field pitch
US7532308B2 (en) * 2005-09-13 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7375353B2 (en) * 2005-09-13 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007039272A1 (en) * 2005-10-04 2007-04-12 Carl Zeiss Smt Ag Lithographic apparatus and method of controlling
DE102005048670B3 (de) 2005-10-07 2007-05-24 Xtreme Technologies Gmbh Anordnung zur Unterdrückung von unerwünschten Spektralanteilen bei einer plasmabasierten EUV-Strahlungsquelle
US7471455B2 (en) * 2005-10-28 2008-12-30 Cymer, Inc. Systems and methods for generating laser light shaped as a line beam
JP4997756B2 (ja) * 2005-12-20 2012-08-08 日新イオン機器株式会社 イオンビーム照射装置およびビーム均一性調整方法
DE102006022352B4 (de) 2006-05-12 2014-11-20 Qimonda Ag Anordnung zur Projektion eines Musters von einer EUV-Maske auf ein Substrat
JP5071385B2 (ja) 2006-06-16 2012-11-14 株式会社ニコン 可変スリット装置、照明装置、露光装置、露光方法及びデバイス製造方法
DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
DE102006039760A1 (de) * 2006-08-24 2008-03-13 Carl Zeiss Smt Ag Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität
WO2008092653A2 (en) * 2007-01-30 2008-08-07 Carl Zeiss Smt Ag Illumination system of a microlithographic projection exposure apparatus
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
US8404432B2 (en) * 2007-06-29 2013-03-26 Seagate Technology Llc Lithography process
DE102007041004A1 (de) * 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie
NL1036162A1 (nl) * 2007-11-28 2009-06-02 Asml Netherlands Bv Lithographic apparatus and method.
DE102008013229B4 (de) * 2007-12-11 2015-04-09 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
US8908151B2 (en) * 2008-02-14 2014-12-09 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system
DE102008001511A1 (de) * 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
US8155773B2 (en) * 2008-05-19 2012-04-10 .Decimal, Inc. Automated process for manufacturing radiation filters for radiation treatment machines including manufacture scheduling
NL2004770A (nl) * 2009-05-29 2010-11-30 Asml Holding Nv Lithographic apparatus and method for illumination uniformity correction and uniformity drift compensation.
WO2012070314A1 (ja) * 2010-11-22 2012-05-31 横河電機株式会社 顕微鏡用分光分析装置、光軸ズレ補正装置、分光装置とそれを用いた顕微鏡
DE102011005881A1 (de) * 2011-03-22 2012-05-03 Carl Zeiss Smt Gmbh Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie
DE102011084152A1 (de) * 2011-10-07 2013-04-11 Carl Zeiss Smt Gmbh Verfahren zur Einstellung der Intensitätsverteilung in einem optischen System einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System
CN102331688B (zh) * 2011-10-25 2013-06-26 中国科学院光电技术研究所 一种光瞳均匀性补偿装置
DE102011085761B4 (de) * 2011-11-04 2016-03-24 Trimble Kaiserslautern Gmbh Lichtstrahl-Aussendevorrichtung für ein Messinstrument und Verfahren zum Ändern der optischen Eigenschaften eines Lichtstrahls
CN103676483B (zh) * 2012-09-03 2015-09-30 上海微电子装备有限公司 用于光刻曝光中的光强调节装置及光强调节方法
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
CN105830198B (zh) * 2013-12-13 2017-10-27 Asml荷兰有限公司 辐射源、量测设备、光刻系统和器件制造方法
WO2017144265A1 (en) 2016-02-25 2017-08-31 Asml Netherlands B.V. Beam homogenizer, illumination system and metrology system
EP3236282A1 (de) * 2016-04-22 2017-10-25 Hexagon Technology Center GmbH Dynamikerweiterung einer distanzmessvorrichtung mit einem variablen optischen abschwächelement im sendekanal
MX2019002083A (es) * 2016-08-31 2019-07-18 Viavi Solutions Inc Articulo con segmentos reflectantes en angulo.
DE102017220265A1 (de) 2017-11-14 2019-05-16 Carl Zeiss Smt Gmbh Beleuchtungsintensitäts-Korrekturvorrichtung zur Vorgabe einer Beleuchtungsintensität über ein Beleuchtungsfeld einer lithographischen Projektionsbelichtungsanlage
US10667693B1 (en) * 2018-11-16 2020-06-02 Perkinelmer Health Sciences, Inc. Systems, methods, and apparatus for interference filter correction based on angle of incidence
RU2754202C1 (ru) * 2020-12-17 2021-08-30 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Многоканальный узел отбора излучения

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4837794A (en) * 1984-10-12 1989-06-06 Maxwell Laboratories Inc. Filter apparatus for use with an x-ray source
US4778263A (en) * 1987-05-29 1988-10-18 The United States Of America As Respresented By The Department Of Energy Variable laser attenuator
JPH05127086A (ja) * 1991-11-01 1993-05-25 Matsushita Electric Ind Co Ltd 光強度の均一化方法およびそれを用いた露光装置
JPH1172722A (ja) * 1997-08-28 1999-03-16 Sharp Corp 光開閉装置、表示装置及びこれらの製造方法
US6404499B1 (en) * 1998-04-21 2002-06-11 Asml Netherlands B.V. Lithography apparatus with filters for optimizing uniformity of an image
EP0952491A3 (de) 1998-04-21 2001-05-09 Asm Lithography B.V. Lithographischer Apparat
JP3762102B2 (ja) * 1998-06-04 2006-04-05 キヤノン株式会社 走査型投影露光装置及びそれを用いたデバイスの製造方法
JP2002033272A (ja) * 2000-05-11 2002-01-31 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
US6704090B2 (en) * 2000-05-11 2004-03-09 Nikon Corporation Exposure method and exposure apparatus
JP3918440B2 (ja) * 2001-02-09 2007-05-23 ウシオ電機株式会社 照度分布均一化フィルタを備えた光照射装置
KR100551209B1 (ko) * 2001-09-07 2006-02-14 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
EP1349009B1 (de) 2002-03-18 2009-02-04 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels

Also Published As

Publication number Publication date
JP4309836B2 (ja) 2009-08-05
JP4777395B2 (ja) 2011-09-21
CN1641414A (zh) 2005-07-20
CN1641414B (zh) 2011-01-05
TWI259934B (en) 2006-08-11
JP2008235941A (ja) 2008-10-02
US20050140957A1 (en) 2005-06-30
EP1975722A2 (de) 2008-10-01
EP1975722A3 (de) 2009-02-25
TW200534032A (en) 2005-10-16
EP1555573B1 (de) 2008-08-13
EP1555573A3 (de) 2005-08-03
EP1555573A2 (de) 2005-07-20
SG113028A1 (en) 2005-07-28
JP2005196180A (ja) 2005-07-21
KR100695985B1 (ko) 2007-03-15
US7030958B2 (en) 2006-04-18
EP1975722B1 (de) 2012-10-31
KR20050069916A (ko) 2005-07-05

Similar Documents

Publication Publication Date Title
DE602004015713D1 (de) Optischer Abschwächer, Strahlsystem, damit ausgerüsteter lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE602005010014D1 (de) Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE602005004949D1 (de) Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE60334428D1 (de) Halter, lithographisches Gerät und Verfahren zur Herstellung einer Vorrichtung
DE60319658D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60323927D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60336189D1 (de) Halter, lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
DE60302897D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60229680D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60223102D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60312813D1 (de) Verfahren und vorrichtung zur herstellung eines verstärkten, faserigen, absorbierenden elementes
DE60225216D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005013038D1 (de) Lithographischer Apparat, Verfahren zur Herstellung einer Vorrichtung
DE602004025893D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005022957D1 (de) Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
DE60138252D1 (de) Lithographischer Apparat, Verfahren zu dessen Kalibrierung und Verfahren zur Herstellung einer Vorrichtung
DE602005001870D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung mit vorwärtsgekoppelter Fokussteuerung.
DE602005020720D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005002155D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005000696D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005000147D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005021180D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE602005004856D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
DE60322657D1 (de) Katoptrisches Projektionssystem, Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung
DE602005020893D1 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition