JP4309836B2 - 光減衰器デバイス、放射システム、及び、それらの付属するリソグラフィ装置、及び、デバイス製造方法 - Google Patents
光減衰器デバイス、放射システム、及び、それらの付属するリソグラフィ装置、及び、デバイス製造方法 Download PDFInfo
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- JP4309836B2 JP4309836B2 JP2004375383A JP2004375383A JP4309836B2 JP 4309836 B2 JP4309836 B2 JP 4309836B2 JP 2004375383 A JP2004375383 A JP 2004375383A JP 2004375383 A JP2004375383 A JP 2004375383A JP 4309836 B2 JP4309836 B2 JP 4309836B2
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
ことに留意されたい。
2 照射システム
3、20、43、60 光減衰器要素
4 放射のビーム
5 パターン形成デバイス
7 第1の支持構造
8 第1の位置決め手段
10 物品、投影システム
11 基板
12 基板テーブル
13 第2の位置決め手段
14 位置センサ
15 ビーム送達システム
21、22 シート
23 エッジ
24a、24b ワイヤ
25 放射のビーム
26 電源
28 照射レンズ
30、34 リボン
31、32、35、36 リール
33 インテグレータロッド
40 放射
41 集光器
42 反射器
44 視野ファセット・ミラー
45 表面
46、47、48 ロッド
49 拡張区間
50、52、123、124 軸
51、53 ロッド
54、103 端面
55 節
56、腹区間
61、80、84、102 帯状片
62 帯状片駆動手段
63 帯状片駆動制御手段
64 ビーム断面
65、66 放射円錐
67 像面
68、69 スポット
81、82、85、141、142 部分
83 線
90 第1のミラー
91 混成第2のミラー
92、93、94 部分ミラー
95、101 スリット
100 ミラー
110 石英板
111 領域
112 コーティング
120、121 プレート
122 窓
130 透明体
131 チャネル
132 前面
133 背面
134 ダクト
135 媒体供給部
136 媒体供給部制御手段
140、143 要素
Claims (1)
- リソグラフィ装置における使用のための放射のビームの均一性を改善するための光減衰器デバイスであって、
前記放射のビームから前記放射の少なくとも一部を取り除く少なくとも1つの光減衰器要素を含み、
前記少なくとも1つの光減衰器要素は、前記ビームに対して与えられる断面積が修正可能である一方、前記光減衰器要素の三次元形状が前記放射のビームの伝播方向に平行な線に対して鏡像対称のままであるように可動であり、
前記少なくとも1つの光減衰器要素は、エッジを有する少なくとも2つのシートと、アクチュエータと、を含み、
前記少なくとも二つのシートは、共通のエッジにおいて互いに接続され、
前記アクチュエータは、前記共通のエッジにより形成された軸の周りで、前記シートの少なくとも1つを前記シートの他方に対して動かすように構成され、
前記少なくとも2つのシートは、電気的に伝導性の材料を含み、
前記アクチュエータは、前記電気的に伝導性の材料に接続され、前記電気的に伝導性の材料を荷電するように構成された電源を含み、
前記少なくとも2つのシートは、前記電気的に伝導性の材料を前記電源に接続する電気的に伝導性のワイヤにより吊り下げられている、光減衰器デバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/748,849 US7030958B2 (en) | 2003-12-31 | 2003-12-31 | Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008172173A Division JP4777395B2 (ja) | 2003-12-31 | 2008-07-01 | 光減衰器デバイス、放射システム、及び、フィルタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005196180A JP2005196180A (ja) | 2005-07-21 |
JP4309836B2 true JP4309836B2 (ja) | 2009-08-05 |
Family
ID=34620639
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004375383A Expired - Fee Related JP4309836B2 (ja) | 2003-12-31 | 2004-12-27 | 光減衰器デバイス、放射システム、及び、それらの付属するリソグラフィ装置、及び、デバイス製造方法 |
JP2008172173A Expired - Fee Related JP4777395B2 (ja) | 2003-12-31 | 2008-07-01 | 光減衰器デバイス、放射システム、及び、フィルタの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008172173A Expired - Fee Related JP4777395B2 (ja) | 2003-12-31 | 2008-07-01 | 光減衰器デバイス、放射システム、及び、フィルタの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7030958B2 (ja) |
EP (2) | EP1555573B1 (ja) |
JP (2) | JP4309836B2 (ja) |
KR (1) | KR100695985B1 (ja) |
CN (1) | CN1641414B (ja) |
DE (1) | DE602004015713D1 (ja) |
SG (1) | SG113028A1 (ja) |
TW (1) | TWI259934B (ja) |
Families Citing this family (47)
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2003
- 2003-12-31 US US10/748,849 patent/US7030958B2/en not_active Expired - Lifetime
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- 2004-12-20 TW TW093139691A patent/TWI259934B/zh not_active IP Right Cessation
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TWI259934B (en) | 2006-08-11 |
CN1641414B (zh) | 2011-01-05 |
SG113028A1 (en) | 2005-07-28 |
EP1555573A2 (en) | 2005-07-20 |
KR20050069916A (ko) | 2005-07-05 |
JP4777395B2 (ja) | 2011-09-21 |
US7030958B2 (en) | 2006-04-18 |
EP1555573A3 (en) | 2005-08-03 |
KR100695985B1 (ko) | 2007-03-15 |
TW200534032A (en) | 2005-10-16 |
DE602004015713D1 (de) | 2008-09-25 |
EP1975722A3 (en) | 2009-02-25 |
JP2005196180A (ja) | 2005-07-21 |
EP1975722B1 (en) | 2012-10-31 |
EP1975722A2 (en) | 2008-10-01 |
JP2008235941A (ja) | 2008-10-02 |
US20050140957A1 (en) | 2005-06-30 |
CN1641414A (zh) | 2005-07-20 |
EP1555573B1 (en) | 2008-08-13 |
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