SG113028A1 - Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method - Google Patents

Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method

Info

Publication number
SG113028A1
SG113028A1 SG200407785A SG200407785A SG113028A1 SG 113028 A1 SG113028 A1 SG 113028A1 SG 200407785 A SG200407785 A SG 200407785A SG 200407785 A SG200407785 A SG 200407785A SG 113028 A1 SG113028 A1 SG 113028A1
Authority
SG
Singapore
Prior art keywords
lithographic apparatus
optical attenuator
radiation system
apparatus therewith
device manufacturing
Prior art date
Application number
SG200407785A
Other languages
English (en)
Inventor
Cornelis Petrus Andreas Luijkx
Vadim Yevgenyevich Banine
Hako Botma
Duijnhoven Martinus Van
Markus Franciscus Ant Eurlings
Jan Jaap Krikke
Heine Melle Mulder
Johannes Hendrik Ev Muijderman
Duijn Cornelis Jacobus Van
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG113028A1 publication Critical patent/SG113028A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
SG200407785A 2003-12-31 2004-12-28 Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method SG113028A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/748,849 US7030958B2 (en) 2003-12-31 2003-12-31 Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method

Publications (1)

Publication Number Publication Date
SG113028A1 true SG113028A1 (en) 2005-07-28

Family

ID=34620639

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200407785A SG113028A1 (en) 2003-12-31 2004-12-28 Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method

Country Status (8)

Country Link
US (1) US7030958B2 (de)
EP (2) EP1555573B1 (de)
JP (2) JP4309836B2 (de)
KR (1) KR100695985B1 (de)
CN (1) CN1641414B (de)
DE (1) DE602004015713D1 (de)
SG (1) SG113028A1 (de)
TW (1) TWI259934B (de)

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US7369216B2 (en) * 2004-10-15 2008-05-06 Asml Netherlands B.V. Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby
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US20060139784A1 (en) * 2004-12-28 2006-06-29 Asml Holding N.V. Uniformity correction system having light leak compensation
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US7265815B2 (en) * 2005-05-19 2007-09-04 Asml Holding N.V. System and method utilizing an illumination beam adjusting system
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US7924406B2 (en) * 2005-07-13 2011-04-12 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method having switch device for two illumination channels
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DE102006036064A1 (de) * 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
DE102006039760A1 (de) * 2006-08-24 2008-03-13 Carl Zeiss Smt Ag Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität
KR101440652B1 (ko) 2007-01-30 2014-09-22 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
US8404432B2 (en) * 2007-06-29 2013-03-26 Seagate Technology Llc Lithography process
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DE102008013229B4 (de) * 2007-12-11 2015-04-09 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
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EP3236282A1 (de) 2016-04-22 2017-10-25 Hexagon Technology Center GmbH Dynamikerweiterung einer distanzmessvorrichtung mit einem variablen optischen abschwächelement im sendekanal
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Also Published As

Publication number Publication date
US20050140957A1 (en) 2005-06-30
KR20050069916A (ko) 2005-07-05
CN1641414B (zh) 2011-01-05
KR100695985B1 (ko) 2007-03-15
DE602004015713D1 (de) 2008-09-25
TWI259934B (en) 2006-08-11
EP1555573B1 (de) 2008-08-13
JP4309836B2 (ja) 2009-08-05
EP1975722B1 (de) 2012-10-31
EP1555573A3 (de) 2005-08-03
JP4777395B2 (ja) 2011-09-21
EP1975722A2 (de) 2008-10-01
EP1555573A2 (de) 2005-07-20
EP1975722A3 (de) 2009-02-25
CN1641414A (zh) 2005-07-20
US7030958B2 (en) 2006-04-18
JP2005196180A (ja) 2005-07-21
TW200534032A (en) 2005-10-16
JP2008235941A (ja) 2008-10-02

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