DE602004003254D1 - Plasmaverarbeitungsvorrichtung - Google Patents

Plasmaverarbeitungsvorrichtung

Info

Publication number
DE602004003254D1
DE602004003254D1 DE602004003254T DE602004003254T DE602004003254D1 DE 602004003254 D1 DE602004003254 D1 DE 602004003254D1 DE 602004003254 T DE602004003254 T DE 602004003254T DE 602004003254 T DE602004003254 T DE 602004003254T DE 602004003254 D1 DE602004003254 D1 DE 602004003254D1
Authority
DE
Germany
Prior art keywords
processing device
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004003254T
Other languages
English (en)
Other versions
DE602004003254T2 (de
Inventor
Kiyoshi Arita
Tetsuhiro Iwai
Akira Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE602004003254D1 publication Critical patent/DE602004003254D1/de
Application granted granted Critical
Publication of DE602004003254T2 publication Critical patent/DE602004003254T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
DE602004003254T 2003-07-23 2004-07-22 Plasmaverarbeitungsvorrichtung Active DE602004003254T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003278076 2003-07-23
JP2003278076 2003-07-23
JP2004149995 2004-05-20
JP2004149995A JP3992018B2 (ja) 2003-07-23 2004-05-20 プラズマ処理装置
PCT/JP2004/010785 WO2005009089A2 (en) 2003-07-23 2004-07-22 Plasma processing apparatus

Publications (2)

Publication Number Publication Date
DE602004003254D1 true DE602004003254D1 (de) 2006-12-28
DE602004003254T2 DE602004003254T2 (de) 2007-03-29

Family

ID=34082385

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004003254T Active DE602004003254T2 (de) 2003-07-23 2004-07-22 Plasmaverarbeitungsvorrichtung

Country Status (7)

Country Link
US (1) US7708860B2 (de)
EP (1) EP1647054B1 (de)
JP (1) JP3992018B2 (de)
KR (1) KR101032396B1 (de)
DE (1) DE602004003254T2 (de)
TW (1) TW200509249A (de)
WO (1) WO2005009089A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3992018B2 (ja) * 2003-07-23 2007-10-17 松下電器産業株式会社 プラズマ処理装置
KR100663351B1 (ko) * 2004-11-12 2007-01-02 삼성전자주식회사 플라즈마 처리장치
JP4508054B2 (ja) * 2005-09-12 2010-07-21 パナソニック株式会社 電極部材の製造方法
JP4674512B2 (ja) * 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
JP4942471B2 (ja) * 2005-12-22 2012-05-30 京セラ株式会社 サセプタおよびこれを用いたウェハの処理方法
JP4622890B2 (ja) * 2006-03-02 2011-02-02 セイコーエプソン株式会社 ウエハ処理装置
JP2008153444A (ja) * 2006-12-18 2008-07-03 Sekisui Chem Co Ltd 表面処理用ステージ構造
KR100892928B1 (ko) * 2007-09-05 2009-04-09 주식회사 에이디피엔지니어링 평판표시소자 제조장치의 하부전극 조립체
JP4858395B2 (ja) 2007-10-12 2012-01-18 パナソニック株式会社 プラズマ処理装置
JP2009130240A (ja) * 2007-11-27 2009-06-11 Tokyo Electron Ltd プラズマ処理装置と基板処理システムおよびプラズマ処理方法
JP5643528B2 (ja) * 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置
US20120055916A1 (en) * 2010-03-01 2012-03-08 Sokudo Co., Ltd. Method and system for thermal treatment of substrates
JP2010183090A (ja) * 2010-03-11 2010-08-19 Panasonic Corp プラズマ処理装置およびプラズマ処理装置用の電極部材
JP5806300B2 (ja) * 2010-06-08 2015-11-10 アクセリス テクノロジーズ， インコーポレイテッド 加熱環状チャック
KR101136728B1 (ko) * 2010-10-18 2012-04-20 주성엔지니어링(주) 기판처리장치와 그의 분해 및 조립방법
US9105705B2 (en) * 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5528394B2 (ja) * 2011-05-30 2014-06-25 パナソニック株式会社 プラズマ処理装置、搬送キャリア、及びプラズマ処理方法
US8826857B2 (en) * 2011-11-21 2014-09-09 Lam Research Corporation Plasma processing assemblies including hinge assemblies
US9016675B2 (en) * 2012-07-06 2015-04-28 Asm Technology Singapore Pte Ltd Apparatus and method for supporting a workpiece during processing
JP6018909B2 (ja) * 2012-12-27 2016-11-02 昭和電工株式会社 ウェハホルダーおよびエピタキシャルウェハの製造装置
NL2010471C2 (en) * 2013-03-18 2014-09-24 Levitech B V Substrate processing apparatus.
TWI648427B (zh) * 2013-07-17 2019-01-21 應用材料股份有限公司 用於交叉流動類型的熱ｃｖｄ腔室之改良的氣體活化的結構
JP2013225703A (ja) * 2013-07-19 2013-10-31 Panasonic Corp プラズマ処理装置
CN104878363B (zh) 2014-02-28 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 机械卡盘及等离子体加工设备
US9428833B1 (en) * 2015-05-29 2016-08-30 Lam Research Corporation Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal
US11220093B2 (en) * 2019-08-27 2022-01-11 Rockwell Collins, Inc. Clam shell lamination system

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099571A (en) * 1990-09-07 1992-03-31 International Business Machines Corporation Method for fabricating a split-ring electrostatic chuck
JPH05259048A (ja) * 1992-03-09 1993-10-08 Nippon Telegr & Teleph Corp <Ntt> 試料加工用装置、試料搬送用装置及び試料搬送・加工用装置
KR100260587B1 (ko) * 1993-06-01 2000-08-01 히가시 데쓰로 정전척 및 그의 제조방법
US5670066A (en) * 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US5781400A (en) * 1995-09-20 1998-07-14 Hitachi, Ltd. Electrostatically attracting electrode and a method of manufacture thereof
JPH09102535A (ja) 1995-10-09 1997-04-15 Fujitsu Ltd ウェハ等の粘着テープへの貼着方法とそのための装置およびウェハの加工方法
JPH09148219A (ja) * 1995-11-21 1997-06-06 Nikon Corp 基板アダプタ
US5589003A (en) * 1996-02-09 1996-12-31 Applied Materials, Inc. Shielded substrate support for processing chamber
US5708250A (en) * 1996-03-29 1998-01-13 Lam Resarch Corporation Voltage controller for electrostatic chuck of vacuum plasma processors
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3201302B2 (ja) 1997-02-10 2001-08-20 松下電器産業株式会社 基板のプラズマクリーニング装置
US6164633A (en) * 1999-05-18 2000-12-26 International Business Machines Corporation Multiple size wafer vacuum chuck
JP2001077184A (ja) 1999-08-31 2001-03-23 Ulvac Japan Ltd 静電吸着装置及びこれを備えた真空処理装置
JP3514201B2 (ja) 2000-01-26 2004-03-31 松下電器産業株式会社 プラズマ処理装置
JP4700819B2 (ja) * 2000-03-10 2011-06-15 キヤノン株式会社 基板保持装置、半導体製造装置および半導体デバイス製造方法
TW512645B (en) * 2000-07-25 2002-12-01 Ibiden Co Ltd Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clamp holder, and substrate for wafer prober
DE10062011B4 (de) * 2000-12-13 2005-02-24 Infineon Technologies Ag Halteeinrichtung
DE60106577T8 (de) * 2001-05-31 2006-04-27 Alcatel Abnehmbare Schirmvorrichtung für Plasmareaktoren
KR100890790B1 (ko) * 2001-08-27 2009-03-31 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US7175737B2 (en) * 2002-04-16 2007-02-13 Canon Anelva Corporation Electrostatic chucking stage and substrate processing apparatus
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
JP3992018B2 (ja) * 2003-07-23 2007-10-17 松下電器産業株式会社 プラズマ処理装置
JP4684222B2 (ja) * 2004-03-19 2011-05-18 株式会社クリエイティブ テクノロジー 双極型静電チャック
US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma

Also Published As

Publication number Publication date
US20070095477A1 (en) 2007-05-03
US7708860B2 (en) 2010-05-04
WO2005009089A2 (en) 2005-01-27
EP1647054A2 (de) 2006-04-19
KR101032396B1 (ko) 2011-05-03
JP3992018B2 (ja) 2007-10-17
TW200509249A (en) 2005-03-01
EP1647054B1 (de) 2006-11-15
WO2005009089A3 (en) 2005-09-01
KR20060063907A (ko) 2006-06-12
JP2005057244A (ja) 2005-03-03
DE602004003254T2 (de) 2007-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8320 Willingness to grant licences declared (paragraph 23)