DE60038711D1 - Mehrschichtige Scheibe mit dicker Opferschicht unter Verwendung von porösem Silizium oder porösem Siliziumdioxid und Herstellungsverfahren - Google Patents
Mehrschichtige Scheibe mit dicker Opferschicht unter Verwendung von porösem Silizium oder porösem Siliziumdioxid und HerstellungsverfahrenInfo
- Publication number
- DE60038711D1 DE60038711D1 DE60038711T DE60038711T DE60038711D1 DE 60038711 D1 DE60038711 D1 DE 60038711D1 DE 60038711 T DE60038711 T DE 60038711T DE 60038711 T DE60038711 T DE 60038711T DE 60038711 D1 DE60038711 D1 DE 60038711D1
- Authority
- DE
- Germany
- Prior art keywords
- porous
- manufacturing process
- thick film
- porous silicon
- porous silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0019—Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
- B81C1/00507—Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76262—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using selective deposition of single crystal silicon, i.e. SEG techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0115—Porous silicon
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR9911269 | 1999-03-31 | ||
KR10-1999-0011269A KR100434537B1 (ko) | 1999-03-31 | 1999-03-31 | 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60038711D1 true DE60038711D1 (de) | 2008-06-12 |
DE60038711T2 DE60038711T2 (de) | 2009-07-02 |
Family
ID=19578400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60038711T Expired - Fee Related DE60038711T2 (de) | 1999-03-31 | 2000-03-27 | Mehrschichtige Scheibe mit dicker Opferschicht unter Verwendung von porösem Silizium oder porösem Siliziumdioxid und Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US6277712B1 (de) |
EP (1) | EP1041621B1 (de) |
JP (1) | JP2000332223A (de) |
KR (1) | KR100434537B1 (de) |
DE (1) | DE60038711T2 (de) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6673644B2 (en) * | 2001-03-29 | 2004-01-06 | Georgia Tech Research Corporation | Porous gas sensors and method of preparation thereof |
DE10161202C1 (de) * | 2001-12-13 | 2003-05-08 | Bosch Gmbh Robert | Verfahren zur Reduktion der Dicke eines Silizium-Substrates |
WO2005122285A2 (en) | 2004-06-04 | 2005-12-22 | The Board Of Trustees Of The University Of Illinois | Methods and devices for fabricating and assembling printable semiconductor elements |
US7521292B2 (en) | 2004-06-04 | 2009-04-21 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
KR101017369B1 (ko) | 2004-08-23 | 2011-02-28 | 삼성전자주식회사 | 디지털 위성방송에서 추가된 네트워크 정보를 얻는 방법 |
KR100793607B1 (ko) | 2006-06-27 | 2008-01-10 | 매그나칩 반도체 유한회사 | 에피텍셜 실리콘 웨이퍼 및 그 제조방법 |
MY149190A (en) * | 2006-09-20 | 2013-07-31 | Univ Illinois | Release strategies for making transferable semiconductor structures, devices and device components |
KR101519038B1 (ko) | 2007-01-17 | 2015-05-11 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프린팅기반 어셈블리에 의해 제조되는 광학 시스템 |
EP2181464A4 (de) * | 2007-08-21 | 2015-04-01 | Lg Electronics Inc | Solarzelle mit poröser struktur und herstellungsverfahren dafür |
CN102113089B (zh) | 2008-03-05 | 2014-04-23 | 伊利诺伊大学评议会 | 可拉伸和可折叠的电子器件 |
US8470701B2 (en) * | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
US8372726B2 (en) | 2008-10-07 | 2013-02-12 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
US9289132B2 (en) | 2008-10-07 | 2016-03-22 | Mc10, Inc. | Catheter balloon having stretchable integrated circuitry and sensor array |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US9123614B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
CN101740379B (zh) * | 2008-11-27 | 2012-06-06 | 中芯国际集成电路制造(上海)有限公司 | 消除半导体器件表面缺陷的方法及半导体器件 |
EP2430652B1 (de) | 2009-05-12 | 2019-11-20 | The Board of Trustees of the University of Illionis | Bedruckte anordnungen aus ultradünnen und mikrofeinen anorganischen leds für verformbare und semitransparente anzeigen |
US9723122B2 (en) | 2009-10-01 | 2017-08-01 | Mc10, Inc. | Protective cases with integrated electronics |
US9936574B2 (en) | 2009-12-16 | 2018-04-03 | The Board Of Trustees Of The University Of Illinois | Waterproof stretchable optoelectronics |
JP6046491B2 (ja) | 2009-12-16 | 2016-12-21 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | コンフォーマル電子機器を使用した生体内での電気生理学 |
US10441185B2 (en) | 2009-12-16 | 2019-10-15 | The Board Of Trustees Of The University Of Illinois | Flexible and stretchable electronic systems for epidermal electronics |
CN102892356B (zh) | 2010-03-17 | 2016-01-13 | 伊利诺伊大学评议会 | 基于生物可吸收基质的可植入生物医学装置 |
US8415555B2 (en) * | 2010-08-24 | 2013-04-09 | Corning Incorporated | Dimensional silica-based porous silicon structures and methods of fabrication |
US9442285B2 (en) | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
FR2973159B1 (fr) * | 2011-03-22 | 2013-04-19 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de base |
WO2012158709A1 (en) | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
KR102000302B1 (ko) | 2011-05-27 | 2019-07-15 | 엠씨10, 인크 | 전자, 광학, 및/또는 기계 장치 및 시스템, 그리고 이를 제조하기 위한 방법 |
EP2713863B1 (de) | 2011-06-03 | 2020-01-15 | The Board of Trustees of the University of Illionis | Anpassbare aktiv multiplexierte elektrodenanordnung mit hochdichter oberfläche zur elektrophysiologischen messung am gehirn |
KR101979354B1 (ko) | 2011-12-01 | 2019-08-29 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프로그램 변형을 실행하도록 설계된 과도 장치 |
CN105283122B (zh) | 2012-03-30 | 2020-02-18 | 伊利诺伊大学评议会 | 可共形于表面的可安装于附肢的电子器件 |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
KR20180034342A (ko) | 2015-06-01 | 2018-04-04 | 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 | 대안적인 자외선 감지방법 |
BR112017025609A2 (pt) | 2015-06-01 | 2018-08-07 | The Board Of Trustees Of The University Of Illinois | sistemas eletrônicos miniaturizados com potência sem fio e capacidades de comunicação de campo próximo |
US10925543B2 (en) | 2015-11-11 | 2021-02-23 | The Board Of Trustees Of The University Of Illinois | Bioresorbable silicon electronics for transient implants |
US10026642B2 (en) | 2016-03-07 | 2018-07-17 | Sunedison Semiconductor Limited (Uen201334164H) | Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereof |
CN108461383A (zh) * | 2018-02-08 | 2018-08-28 | 澳洋集团有限公司 | 降低SiO2钝化层中孔隙的方法及LED的制备方法 |
US11466358B2 (en) * | 2019-12-13 | 2022-10-11 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of forming a porous multilayer material |
Family Cites Families (17)
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US3961353A (en) * | 1974-10-21 | 1976-06-01 | International Business Machines Corporation | High power semiconductor device |
US5387803A (en) * | 1993-06-16 | 1995-02-07 | Kulite Semiconductor Products, Inc. | Piezo-optical pressure sensitive switch with porous material |
US5393712A (en) * | 1993-06-28 | 1995-02-28 | Lsi Logic Corporation | Process for forming low dielectric constant insulation layer on integrated circuit structure |
US5470801A (en) * | 1993-06-28 | 1995-11-28 | Lsi Logic Corporation | Low dielectric constant insulation layer for integrated circuit structure and method of making same |
DE69433949T2 (de) * | 1993-12-07 | 2005-09-08 | Infineon Technologies Ag | Verfahren zur Herstellung von MOSFETS mit verbesserten Kurz-Kanal Effekten |
US5660680A (en) * | 1994-03-07 | 1997-08-26 | The Regents Of The University Of California | Method for fabrication of high vertical aspect ratio thin film structures |
JPH08241863A (ja) * | 1995-03-06 | 1996-09-17 | Canon Inc | 半導体基板の製造方法 |
JP3302228B2 (ja) * | 1995-09-12 | 2002-07-15 | 株式会社東芝 | Soi基板の作製方法 |
US5616519A (en) * | 1995-11-02 | 1997-04-01 | Chartered Semiconductor Manufacturing Pte Ltd. | Non-etch back SOG process for hot aluminum metallizations |
US5639692A (en) * | 1996-04-08 | 1997-06-17 | Chartered Semiconductor Manufacturing Pte, Ltd. | Non-etch back SOG process using a metal via stud |
SG55413A1 (en) * | 1996-11-15 | 1998-12-21 | Method Of Manufacturing Semico | Method of manufacturing semiconductor article |
ATE261612T1 (de) * | 1996-12-18 | 2004-03-15 | Canon Kk | Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht |
US6143628A (en) * | 1997-03-27 | 2000-11-07 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
JPH10284706A (ja) * | 1997-04-02 | 1998-10-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体基板の製造方法及び半導体製造装置 |
GR1003010B (el) * | 1997-05-07 | 1998-11-20 | "����������" | Ολοκληρωμενος αισθητηρας ροης αεριων χρησιμοποιωντας τεχνολογια πορωδους πυριτιου |
US6126847A (en) * | 1997-11-24 | 2000-10-03 | Micron Technology Inc. | High selectivity etching process for oxides |
US6077776A (en) * | 1998-03-18 | 2000-06-20 | Taiwan Semiconductor Manufacturing Company | Polysilicon residue free process by thermal treatment |
-
1999
- 1999-03-31 KR KR10-1999-0011269A patent/KR100434537B1/ko not_active IP Right Cessation
-
2000
- 2000-03-27 DE DE60038711T patent/DE60038711T2/de not_active Expired - Fee Related
- 2000-03-27 EP EP00106011A patent/EP1041621B1/de not_active Expired - Lifetime
- 2000-03-30 JP JP2000093781A patent/JP2000332223A/ja not_active Withdrawn
- 2000-03-31 US US09/540,552 patent/US6277712B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2000332223A (ja) | 2000-11-30 |
US6277712B1 (en) | 2001-08-21 |
EP1041621A2 (de) | 2000-10-04 |
EP1041621B1 (de) | 2008-04-30 |
DE60038711T2 (de) | 2009-07-02 |
EP1041621A3 (de) | 2004-11-24 |
KR100434537B1 (ko) | 2004-06-05 |
KR20000061888A (ko) | 2000-10-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |