DE60029036D1 - Magnetoresistives Element und Herstellungsverfahren sowie magnetoresistiver Kopf, magnetischer Aufzeichnungsapparat und magnetoresistives Speicherelement - Google Patents

Magnetoresistives Element und Herstellungsverfahren sowie magnetoresistiver Kopf, magnetischer Aufzeichnungsapparat und magnetoresistives Speicherelement

Info

Publication number
DE60029036D1
DE60029036D1 DE60029036T DE60029036T DE60029036D1 DE 60029036 D1 DE60029036 D1 DE 60029036D1 DE 60029036 T DE60029036 T DE 60029036T DE 60029036 T DE60029036 T DE 60029036T DE 60029036 D1 DE60029036 D1 DE 60029036D1
Authority
DE
Germany
Prior art keywords
magnetoresistive
manufacturing
recording apparatus
magnetic recording
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60029036T
Other languages
English (en)
Other versions
DE60029036T2 (de
Inventor
Hiroshi Sakakima
Yasunari Sugita
Mitsuo Satomi
Yasuhiro Kawawake
Masayoshi Hiramoto
Nozomu Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE60029036D1 publication Critical patent/DE60029036D1/de
Application granted granted Critical
Publication of DE60029036T2 publication Critical patent/DE60029036T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/012—Recording on, or reproducing or erasing from, magnetic disks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE60029036T 1999-03-02 2000-03-02 Magnetoresistives Element und Herstellungsverfahren sowie magnetoresistiver Kopf, magnetischer Aufzeichnungsapparat und magnetoresistives Speicherelement Expired - Lifetime DE60029036T2 (de)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP5407799 1999-03-02
JP5407799 1999-03-02
JP8330599 1999-03-26
JP8330599 1999-03-26
JP13528099 1999-05-17
JP13528099 1999-05-17
JP18872399 1999-07-02
JP18872399 1999-07-02
JP23505399 1999-08-23
JP23505399 1999-08-23
JP35432799 1999-12-14
JP35432799 1999-12-14

Publications (2)

Publication Number Publication Date
DE60029036D1 true DE60029036D1 (de) 2006-08-10
DE60029036T2 DE60029036T2 (de) 2006-11-23

Family

ID=27550546

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60029036T Expired - Lifetime DE60029036T2 (de) 1999-03-02 2000-03-02 Magnetoresistives Element und Herstellungsverfahren sowie magnetoresistiver Kopf, magnetischer Aufzeichnungsapparat und magnetoresistives Speicherelement

Country Status (4)

Country Link
US (2) US6567246B1 (de)
EP (1) EP1033764B1 (de)
KR (1) KR100376028B1 (de)
DE (1) DE60029036T2 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785100B2 (en) * 2000-04-10 2004-08-31 Matsushita Electric Industrial Co., Ltd. Magnetic head comprising a multilayer magnetoresistive device and a yoke for introducing magnetic flux from a medium to the magnetoresistive device
JP2001308411A (ja) * 2000-04-11 2001-11-02 Read Rite Corp スピンバルブ型磁気抵抗センサおよび薄膜磁気ヘッド
US6661622B1 (en) * 2000-07-17 2003-12-09 International Business Machines Corporation Method to achieve low and stable ferromagnetic coupling field
US6767655B2 (en) 2000-08-21 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element
US6753072B1 (en) * 2000-09-05 2004-06-22 Seagate Technology Llc Multilayer-based magnetic media with hard ferromagnetic, anti-ferromagnetic, and soft ferromagnetic layers
US6853520B2 (en) * 2000-09-05 2005-02-08 Kabushiki Kaisha Toshiba Magnetoresistance effect element
JP4693292B2 (ja) * 2000-09-11 2011-06-01 株式会社東芝 強磁性トンネル接合素子およびその製造方法
US6893734B2 (en) * 2000-12-22 2005-05-17 Alps Electric Co., Ltd. Magnetic sensing element with improved sensitivity and method for making the same
US6798624B2 (en) * 2001-03-15 2004-09-28 Seagate Technology Llc Magnetization sensor for sensing the write field characteristics of a perpendicular or longitudinal recording head
US6836392B2 (en) * 2001-04-24 2004-12-28 Hitachi Global Storage Technologies Netherlands, B.V. Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
JP2002358610A (ja) * 2001-06-01 2002-12-13 Fujitsu Ltd 磁気抵抗ヘッド及びその製造方法
DE10128964B4 (de) * 2001-06-15 2012-02-09 Qimonda Ag Digitale magnetische Speicherzelleneinrichtung
JP2003031867A (ja) * 2001-07-17 2003-01-31 Hitachi Ltd 酸化物磁性層と金属磁性膜を積層した磁気抵抗効果素子
FR2830971B1 (fr) * 2001-10-12 2004-03-12 Commissariat Energie Atomique Dispositif magnetoresistif a vanne de spin a performances ameliorees
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
JP2003152240A (ja) * 2001-11-13 2003-05-23 Hitachi Ltd 酸化物層を含んだ積層体及びこれを用いた磁気抵抗効果型ヘッド、磁気記録再生装置
JP2003198002A (ja) * 2001-12-25 2003-07-11 Fujitsu Ltd 磁気抵抗効果膜および強磁性積層構造体
JP2003198003A (ja) * 2001-12-27 2003-07-11 Sony Corp 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置
US6930864B2 (en) 2002-03-22 2005-08-16 International Business Machines Corporation Methods and apparatus for defining the track width of a magnetic head having a flat sensor profile
JP4382333B2 (ja) * 2002-03-28 2009-12-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
US6831312B2 (en) * 2002-08-30 2004-12-14 Freescale Semiconductor, Inc. Amorphous alloys for magnetic devices
JP2004128015A (ja) * 2002-09-30 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
US7007373B2 (en) * 2002-11-18 2006-03-07 Hitachi Global Storage Technologies Netherlands B.V. Method of manufacturing enhanced spin-valve sensor with engineered overlayer
JP2004200245A (ja) 2002-12-16 2004-07-15 Nec Corp 磁気抵抗素子及び磁気抵抗素子の製造方法
JP2004289100A (ja) * 2003-01-31 2004-10-14 Japan Science & Technology Agency Ｃｐｐ型巨大磁気抵抗素子及びそれを用いた磁気部品並びに磁気装置
US6967366B2 (en) * 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US7201827B2 (en) 2003-09-12 2007-04-10 Headway Technologies, Inc. Process and structure to fabricate spin valve heads for ultra-high recording density application
JP2005123412A (ja) * 2003-10-16 2005-05-12 Anelva Corp 磁気抵抗多層膜製造方法及び製造装置
US7045838B2 (en) * 2003-10-31 2006-05-16 International Business Machines Corporation Techniques for coupling in semiconductor devices and magnetic device using these techniques
US7053429B2 (en) 2003-11-06 2006-05-30 Honeywell International Inc. Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
US7114240B2 (en) 2003-11-12 2006-10-03 Honeywell International, Inc. Method for fabricating giant magnetoresistive (GMR) devices
US7053430B2 (en) 2003-11-12 2006-05-30 Honeywell International Inc. Antiferromagnetic stabilized storage layers in GMRAM storage devices
JP4877506B2 (ja) * 2004-03-31 2012-02-15 日本電気株式会社 磁化方向制御方法、及びそれを応用したｍｒａｍ
US20070035890A1 (en) * 2004-04-02 2007-02-15 Tdk Corporation Composed free layer for stabilizing magnetoresistive head having low magnetostriction
CN1938781B (zh) * 2004-04-16 2011-09-21 松下电器产业株式会社 具有可变电阻的薄膜存储器件
WO2007013887A2 (en) * 2004-10-15 2007-02-01 The Trustees Of Columbia University In The City Of New York Methods of manipulating the relaxation rate in magnetic materials and devices for using the same
US7390530B2 (en) * 2004-11-30 2008-06-24 Headway Technologies, Inc. Structure and process for composite free layer in CPP GMR device
KR100586265B1 (ko) * 2005-03-09 2006-06-08 학교법인고려중앙학원 비정질 코발트-철-실리콘-보론 자유층을 구비하는 자기 터널 접합
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
JP4514721B2 (ja) * 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP2007273057A (ja) * 2006-03-31 2007-10-18 Fujitsu Ltd 垂直磁気記録媒体および磁気記憶装置
JP2007299880A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置
JP2008047669A (ja) * 2006-08-14 2008-02-28 Tdk Corp 磁気メモリ、磁気記憶素子の情報読み書き方法。
JP2008085202A (ja) * 2006-09-28 2008-04-10 Toshiba Corp 磁気抵抗効果素子、磁気メモリ、磁気ヘッド、および磁気記録再生装置
JP2008085220A (ja) 2006-09-28 2008-04-10 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、および磁気再生装置
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP5361201B2 (ja) * 2008-01-30 2013-12-04 株式会社東芝 磁気抵抗効果素子の製造方法
JP5150284B2 (ja) 2008-01-30 2013-02-20 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP2009224403A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 情報記録素子及びそれを備えた情報記録再生装置
JP5039007B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置
US20100110584A1 (en) * 2008-10-30 2010-05-06 Qing Dai Dual oxide recording sublayers in perpendicular recording media
DE102009021400A1 (de) * 2009-05-14 2010-11-18 Forschungszentrum Jülich GmbH Magnetoelektronische Bauelemente und Messverfahren
US9647203B2 (en) * 2014-03-13 2017-05-09 Kabushiki Kaisha Toshiba Magnetoresistive element having a magnetic layer including O
US20160087194A1 (en) * 2014-09-18 2016-03-24 Samsung Electronics Co., Ltd. Magnetic tunnel junction device and magnetoresistive random access memory
US20170338402A1 (en) * 2016-05-18 2017-11-23 International Business Machines Corporation Noble metal cap layer for a metal oxide cap of a magnetic tunnel junction structure

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60204626A (ja) * 1984-03-30 1985-10-16 Anelva Corp 酸化鉄薄膜の形成方法および装置
EP0443478A3 (en) * 1990-02-19 1992-03-11 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Magnetic recording medium and method for preparing the same
US5583725A (en) 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
JPH08147631A (ja) * 1994-11-16 1996-06-07 Hitachi Ltd 磁気記録再生装置
JP3050094B2 (ja) * 1995-08-04 2000-06-05 住友金属工業株式会社 スピンバルブ素子
JPH0950608A (ja) * 1995-08-04 1997-02-18 Sumitomo Metal Ind Ltd スピンバルブ素子
JP3293437B2 (ja) 1995-12-19 2002-06-17 松下電器産業株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子
US5909345A (en) * 1996-02-22 1999-06-01 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
TW367493B (en) * 1996-04-30 1999-08-21 Toshiba Corp Reluctance component
US5668688A (en) * 1996-05-24 1997-09-16 Quantum Peripherals Colorado, Inc. Current perpendicular-to-the-plane spin valve type magnetoresistive transducer
JP3325478B2 (ja) * 1996-12-27 2002-09-17 ワイケイケイ株式会社 磁気抵抗効果素子および磁気検出器並びにその使用方法
SG75829A1 (en) * 1997-03-14 2000-10-24 Toshiba Kk Magneto-resistance effect element and magnetic head
JPH1131312A (ja) * 1997-07-09 1999-02-02 Hitachi Ltd 二重スピンバルブセンサ
DE69811458T2 (de) 1997-11-17 2004-01-08 Matsushita Electronics Corp., Kadoma Dünnschicht mit Wechselkupplung, magnetoresistives Element, magnetoresistiver Kopf und Herstellungsverfahren
US6258470B1 (en) * 1998-01-16 2001-07-10 Matsushita Electric Industrial Co., Ltd. Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
US6303218B1 (en) * 1998-03-20 2001-10-16 Kabushiki Kaisha Toshiba Multi-layered thin-film functional device and magnetoresistance effect element
US6169688B1 (en) * 1998-03-23 2001-01-02 Kabushiki Kaisha Toshiba Magnetic storage device using unipole currents for selecting memory cells
US6348274B1 (en) * 1998-12-28 2002-02-19 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic recording apparatus
US6430013B1 (en) * 1999-12-06 2002-08-06 International Business Machines Corporation Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer
US6407890B1 (en) * 2000-02-08 2002-06-18 International Business Machines Corporation Dual spin valve sensor read head with a specular reflector film embedded in each antiparallel (AP) pinned layer next to a spacer layer

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EP1033764A3 (de) 2001-01-03
EP1033764B1 (de) 2006-06-28
EP1033764A2 (de) 2000-09-06
KR100376028B1 (ko) 2003-03-15
US20030197505A1 (en) 2003-10-23
KR20000062712A (ko) 2000-10-25
DE60029036T2 (de) 2006-11-23
US6567246B1 (en) 2003-05-20

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