DE60014148T2 - Photodetektor - Google Patents

Photodetektor Download PDF

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Publication number
DE60014148T2
DE60014148T2 DE60014148T DE60014148T DE60014148T2 DE 60014148 T2 DE60014148 T2 DE 60014148T2 DE 60014148 T DE60014148 T DE 60014148T DE 60014148 T DE60014148 T DE 60014148T DE 60014148 T2 DE60014148 T2 DE 60014148T2
Authority
DE
Germany
Prior art keywords
circuit
signal
output
capacitor
signal voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60014148T
Other languages
German (de)
English (en)
Other versions
DE60014148D1 (de
Inventor
Seiichiro Hamamatsu-shi Mizuno
Haruhiro Hamamatsu-shi FUNAKOSHI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Application granted granted Critical
Publication of DE60014148D1 publication Critical patent/DE60014148D1/de
Publication of DE60014148T2 publication Critical patent/DE60014148T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Focusing (AREA)
  • Automatic Focus Adjustment (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE60014148T 1999-07-16 2000-07-17 Photodetektor Expired - Lifetime DE60014148T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP20350299 1999-07-16
JP20350299A JP4119052B2 (ja) 1999-07-16 1999-07-16 光検出装置
PCT/JP2000/004786 WO2001006573A1 (en) 1999-07-16 2000-07-17 Photodetector

Publications (2)

Publication Number Publication Date
DE60014148D1 DE60014148D1 (de) 2004-10-28
DE60014148T2 true DE60014148T2 (de) 2005-10-06

Family

ID=16475228

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60014148T Expired - Lifetime DE60014148T2 (de) 1999-07-16 2000-07-17 Photodetektor

Country Status (6)

Country Link
US (1) US6642501B2 (https=)
EP (1) EP1229593B1 (https=)
JP (1) JP4119052B2 (https=)
AU (1) AU5853700A (https=)
DE (1) DE60014148T2 (https=)
WO (1) WO2001006573A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69935167T2 (de) * 1999-04-13 2007-11-22 Hamamatsu Photonics K.K., Hamamatsu Bildgerät
JP4119052B2 (ja) * 1999-07-16 2008-07-16 浜松ホトニクス株式会社 光検出装置
EP1206131B1 (en) * 1999-08-05 2005-12-07 Hamamatsu Photonics K.K. Solid-state imaging device and range finding device
JP4724313B2 (ja) * 2001-05-18 2011-07-13 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
EP1453098B1 (en) * 2001-12-05 2013-09-18 Hamamatsu Photonics K.K. Light detection device, imaging device and distant image acquisition device
US6849845B2 (en) * 2002-02-13 2005-02-01 Em Microelectronic-Marin Sa Low power integrating circuit for use with a photodetector and optical sensor including such an integrating circuit
JP2003279410A (ja) * 2002-03-26 2003-10-02 Communication Research Laboratory 光検出装置
IL165336A0 (en) * 2002-06-27 2006-01-15 Qualcomm Inc Filtering applicable to digital to analog converter systems
JP4293588B2 (ja) * 2002-12-16 2009-07-08 浜松ホトニクス株式会社 光検出装置
JP2004200794A (ja) * 2002-12-16 2004-07-15 Hamamatsu Photonics Kk 光検出装置
JP2005218052A (ja) 2004-02-02 2005-08-11 Hamamatsu Photonics Kk 光検出装置
JP4499442B2 (ja) * 2004-02-10 2010-07-07 浜松ホトニクス株式会社 積分回路および光検出装置
JP4440680B2 (ja) 2004-03-18 2010-03-24 浜松ホトニクス株式会社 光検出装置
KR100674957B1 (ko) * 2005-02-23 2007-01-26 삼성전자주식회사 임의의 서브-샘플링 레이트로 아날로그 신호를 평균화하여서브-샘플링하는 고체 촬상 소자 및 그 구동 방법
JP5261186B2 (ja) * 2005-11-21 2013-08-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 検出モジュール
JP2008042828A (ja) * 2006-08-10 2008-02-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びその駆動方法。
US8044899B2 (en) * 2007-06-27 2011-10-25 Hong Kong Applied Science and Technology Research Institute Company Limited Methods and apparatus for backlight calibration
DE102008018718B4 (de) * 2008-04-14 2010-02-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optischer Abstandsmesser und Verfahren zur optischen Abstandsmessung
JP5340643B2 (ja) * 2008-06-03 2013-11-13 オリンパス株式会社 固体撮像装置
DE102009015586A1 (de) 2009-03-30 2010-10-14 Perkinelmer Optoelectronics Gmbh & Co.Kg Sensorausleseschaltung, Sensor und Verfahren zum Auslesen eines Sensorelements
WO2011117162A1 (en) * 2010-03-25 2011-09-29 Iee International Electronics & Engineering S.A. Optoelectronic sensor and method for detecting impinging-light attribute
JP5028545B2 (ja) * 2012-01-16 2012-09-19 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
EP2924979B1 (en) 2014-03-25 2023-01-18 IMEC vzw Improvements in or relating to imaging sensors
KR102656419B1 (ko) 2017-07-21 2024-04-11 에꼴 뽈리떼끄닉 뻬데랄 드 로잔느 (으뻬에프엘) 건강 모니터링 장치
KR102823435B1 (ko) * 2018-10-11 2025-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4298259A (en) * 1979-08-27 1981-11-03 Asaki Kogaku Kogyo Kabushiki Kaisha Focus detecting device for photographic camera
JPS61121581A (ja) * 1984-11-16 1986-06-09 Matsushita Electronics Corp 固体撮像装置の駆動方法
JPS6390852A (ja) * 1986-10-03 1988-04-21 Nec Corp 電荷結合素子の出力回路
JP3053297B2 (ja) * 1992-07-16 2000-06-19 株式会社日立製作所 光応用電流検出器
GB2269506B (en) * 1992-08-07 1996-02-07 Gec Ferranti Defence Syst Integrated-circuit image sensor
JP2738899B2 (ja) 1993-03-19 1998-04-08 浜松ホトニクス株式会社 固体撮像装置
JP3774499B2 (ja) * 1996-01-24 2006-05-17 キヤノン株式会社 光電変換装置
JP3798462B2 (ja) * 1996-04-01 2006-07-19 浜松ホトニクス株式会社 固体撮像装置
JP3817294B2 (ja) 1996-04-01 2006-09-06 浜松ホトニクス株式会社 固体撮像装置
US5892540A (en) * 1996-06-13 1999-04-06 Rockwell International Corporation Low noise amplifier for passive pixel CMOS imager
JP4390881B2 (ja) * 1998-12-02 2009-12-24 浜松ホトニクス株式会社 光検出装置
US6222175B1 (en) * 1998-03-10 2001-04-24 Photobit Corporation Charge-domain analog readout for an image sensor
WO2000045592A1 (en) * 1999-01-29 2000-08-03 Hamamatsu Photonics K.K. Photodetector device
JP4358351B2 (ja) * 1999-04-27 2009-11-04 浜松ホトニクス株式会社 光検出装置
JP4119052B2 (ja) * 1999-07-16 2008-07-16 浜松ホトニクス株式会社 光検出装置
EP1206131B1 (en) * 1999-08-05 2005-12-07 Hamamatsu Photonics K.K. Solid-state imaging device and range finding device

Also Published As

Publication number Publication date
US6642501B2 (en) 2003-11-04
EP1229593A1 (en) 2002-08-07
EP1229593A4 (en) 2002-11-27
DE60014148D1 (de) 2004-10-28
JP4119052B2 (ja) 2008-07-16
US20020060284A1 (en) 2002-05-23
EP1229593B1 (en) 2004-09-22
WO2001006573A1 (en) 2001-01-25
AU5853700A (en) 2001-02-05
JP2001036128A (ja) 2001-02-09

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