DE60012334D1 - Pseudodifferentieller stromgesteuerter leseverstärker mit hysterese - Google Patents

Pseudodifferentieller stromgesteuerter leseverstärker mit hysterese

Info

Publication number
DE60012334D1
DE60012334D1 DE60012334T DE60012334T DE60012334D1 DE 60012334 D1 DE60012334 D1 DE 60012334D1 DE 60012334 T DE60012334 T DE 60012334T DE 60012334 T DE60012334 T DE 60012334T DE 60012334 D1 DE60012334 D1 DE 60012334D1
Authority
DE
Germany
Prior art keywords
coupled
amplifier
transistor
current
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60012334T
Other languages
English (en)
Other versions
DE60012334T2 (de
Inventor
Leonard Forbes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE60012334D1 publication Critical patent/DE60012334D1/de
Publication of DE60012334T2 publication Critical patent/DE60012334T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/45—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of non-linear magnetic or dielectric devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)
  • Static Random-Access Memory (AREA)
  • Measurement Of Current Or Voltage (AREA)
DE60012334T 1999-08-24 2000-08-24 Pseudodifferentieller strommessverstärker mit hysterese Expired - Lifetime DE60012334T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US379532 1999-08-24
US09/379,532 US6288575B1 (en) 1999-08-24 1999-08-24 Pseudo-differential current sense amplifier with hysteresis
PCT/US2000/023304 WO2001018814A1 (en) 1999-08-24 2000-08-24 Pseudo-differential current sense amplifier with hysteresis

Publications (2)

Publication Number Publication Date
DE60012334D1 true DE60012334D1 (de) 2004-08-26
DE60012334T2 DE60012334T2 (de) 2005-03-17

Family

ID=23497647

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60012334T Expired - Lifetime DE60012334T2 (de) 1999-08-24 2000-08-24 Pseudodifferentieller strommessverstärker mit hysterese

Country Status (8)

Country Link
US (2) US6288575B1 (de)
EP (1) EP1206776B1 (de)
JP (1) JP3826035B2 (de)
KR (1) KR100441230B1 (de)
AT (1) ATE271711T1 (de)
AU (1) AU6934900A (de)
DE (1) DE60012334T2 (de)
WO (1) WO2001018814A1 (de)

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US6822904B2 (en) 2001-01-03 2004-11-23 Micron Technology, Inc. Fast sensing scheme for floating-gate memory cells
US6522592B2 (en) * 2001-04-19 2003-02-18 Micron Technology, Inc. Sense amplifier for reduction of access device leakage
US6930516B2 (en) * 2001-05-30 2005-08-16 Agere Systems Inc. Comparator circuits having non-complementary input structures
US6438051B1 (en) * 2001-05-31 2002-08-20 International Business Machines Corporation Stabilized direct sensing memory architecture
ITRM20010531A1 (it) 2001-08-31 2003-02-28 Micron Technology Inc Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash.
US6501302B1 (en) 2001-10-15 2002-12-31 Sun Microsystems, Inc. Single-input/dual-output sense amplifier
JP3597812B2 (ja) * 2001-11-21 2004-12-08 株式会社半導体理工学研究センター 擬似差動増幅回路及び擬似差動増幅回路を使用したａ／ｄ変換器
US6741112B2 (en) * 2002-03-01 2004-05-25 Broadcom Corporation Input circuit with hysteresis
US7023243B2 (en) * 2002-05-08 2006-04-04 University Of Southern California Current source evaluation sense-amplifier
US6791372B2 (en) * 2002-06-04 2004-09-14 Intel Corporation Active cascode differential latch
US7005913B2 (en) * 2003-09-26 2006-02-28 Arm Physical Ip, Inc. I/O buffer with wide range voltage translator
US7584345B2 (en) * 2003-10-30 2009-09-01 International Business Machines Corporation System for using FPGA technology with a microprocessor for reconfigurable, instruction level hardware acceleration
WO2005059958A2 (en) * 2003-12-12 2005-06-30 Great Wall Semiconductor Corporation Monolithic power semiconductor structures
US7221605B2 (en) * 2004-08-31 2007-05-22 Micron Technology, Inc. Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
US7236415B2 (en) * 2004-09-01 2007-06-26 Micron Technology, Inc. Sample and hold memory sense amplifier
KR100559406B1 (ko) * 2004-10-15 2006-03-10 삼성전자주식회사 히스테리시스를 갖는 비교기 및 그것을 사용한 비교 방법
US7019678B1 (en) * 2005-01-14 2006-03-28 National Semiconductor Corporation Digital-to-analog converter with constant differential gain and method
US7187223B2 (en) * 2005-02-14 2007-03-06 Avago Technologies Ecbu (Ip) Singapore Pte. Ltd. Comparator with hysteresis
KR100599217B1 (ko) 2005-03-08 2006-07-12 삼성전자주식회사 전류 모드 버스 인터페이스 시스템과 이를 위한 모드 전환방법 및 모드 제어신호 발생회로
GB2424774B (en) * 2005-03-31 2009-02-25 Seiko Epson Corp Sensing circuit
US7230868B2 (en) * 2005-07-28 2007-06-12 Texas Instruments Incorporated Stable source-coupled sense amplifier
US7230479B2 (en) * 2005-08-03 2007-06-12 Micron Technology, Inc. Technique to improve the gain and signal to noise ratio in CMOS switched capacitor amplifiers
US7631953B2 (en) * 2006-03-31 2009-12-15 Lexmark International, Inc. Micro-fluid ejection apparatus signal communication devices and methods
KR100748462B1 (ko) * 2006-09-13 2007-08-13 주식회사 하이닉스반도체 반도체 메모리 장치의 리시버 회로
US7477076B2 (en) * 2006-12-04 2009-01-13 International Business Machines Corporation Low-voltage, low-power-consumption, and high-speed differential current-sense amplification
JP2009051361A (ja) * 2007-08-27 2009-03-12 Bridgestone Corp 二輪車用空気入りタイヤ
US7813201B2 (en) * 2008-07-08 2010-10-12 Atmel Corporation Differential sense amplifier
TWI433163B (zh) * 2009-12-23 2014-04-01 Mstar Semiconductor Inc 記憶體控制器及其控制方法
US20130101056A1 (en) * 2011-10-25 2013-04-25 Samsung Electronics Co., Ltd. Receiver circuit and system including p-type sense amplifier
KR101369249B1 (ko) 2012-08-07 2014-03-06 주식회사 동부하이텍 비휘발성 메모리의 센스 앰프 회로 장치
KR102169681B1 (ko) * 2013-12-16 2020-10-26 삼성전자주식회사 감지 증폭기, 그것을 포함하는 불휘발성 메모리 장치 및 그것의 센싱 방법
KR102215359B1 (ko) 2014-08-01 2021-02-15 삼성전자주식회사 비휘발성 메모리 장치와 그 센싱 방법
US10032505B2 (en) 2015-07-13 2018-07-24 International Business Machines Corporation Dynamic random access memory with pseudo differential sensing
US9654086B1 (en) 2016-01-11 2017-05-16 Globalfoundries Inc. Operational amplifier with current-controlled up or down hysteresis
US9552869B1 (en) 2016-01-25 2017-01-24 International Business Machines Corporation Random access memory with pseudo-differential sensing
US9805777B2 (en) * 2016-02-24 2017-10-31 Arm Ltd. Sense amplifier

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US4843264A (en) * 1987-11-25 1989-06-27 Visic, Inc. Dynamic sense amplifier for CMOS static RAM
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US5309047A (en) 1992-02-21 1994-05-03 Simtek Corporation Differential sense amplifier with cross connected reference circuits
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US5808496A (en) 1993-05-19 1998-09-15 Texas Instruments Incorporated Low current comparator with hysteresis
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Also Published As

Publication number Publication date
AU6934900A (en) 2001-04-10
EP1206776B1 (de) 2004-07-21
JP3826035B2 (ja) 2006-09-27
US20020008549A1 (en) 2002-01-24
DE60012334T2 (de) 2005-03-17
WO2001018814A1 (en) 2001-03-15
ATE271711T1 (de) 2004-08-15
EP1206776A1 (de) 2002-05-22
KR100441230B1 (ko) 2004-07-21
KR20020029930A (ko) 2002-04-20
US6288575B1 (en) 2001-09-11
US6538476B2 (en) 2003-03-25
JP2003509882A (ja) 2003-03-11

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Legal Events

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