DE60001497T2 - Rampenförmige oder stufenweise gate-kanal löschung für flash-speicher - Google Patents
Rampenförmige oder stufenweise gate-kanal löschung für flash-speicherInfo
- Publication number
- DE60001497T2 DE60001497T2 DE60001497T DE60001497T DE60001497T2 DE 60001497 T2 DE60001497 T2 DE 60001497T2 DE 60001497 T DE60001497 T DE 60001497T DE 60001497 T DE60001497 T DE 60001497T DE 60001497 T2 DE60001497 T2 DE 60001497T2
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- erase
- control gate
- applying
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 98
- 230000000630 rising effect Effects 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 238000012937 correction Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 14
- 108091006146 Channels Proteins 0.000 description 12
- 238000010893 electron trap Methods 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 7
- 238000012795 verification Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000002784 hot electron Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- LZIAMMQBHJIZAG-UHFFFAOYSA-N 2-[di(propan-2-yl)amino]ethyl carbamimidothioate Chemical compound CC(C)N(C(C)C)CCSC(N)=N LZIAMMQBHJIZAG-UHFFFAOYSA-N 0.000 description 1
- 101100216008 Gallus gallus ANPEP gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
Landscapes
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/307,259 US6188609B1 (en) | 1999-05-06 | 1999-05-06 | Ramped or stepped gate channel erase for flash memory application |
| PCT/US2000/012343 WO2000068952A1 (en) | 1999-05-06 | 2000-05-05 | Ramped or stepped gate channel erase for flash memory application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60001497D1 DE60001497D1 (de) | 2003-04-03 |
| DE60001497T2 true DE60001497T2 (de) | 2003-12-24 |
Family
ID=23188932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60001497T Expired - Lifetime DE60001497T2 (de) | 1999-05-06 | 2000-05-05 | Rampenförmige oder stufenweise gate-kanal löschung für flash-speicher |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6188609B1 (enExample) |
| EP (1) | EP1175680B1 (enExample) |
| JP (1) | JP3811760B2 (enExample) |
| KR (1) | KR100578582B1 (enExample) |
| DE (1) | DE60001497T2 (enExample) |
| TW (1) | TW461095B (enExample) |
| WO (1) | WO2000068952A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7366020B2 (en) * | 1999-07-28 | 2008-04-29 | Samsung Electronics Co., Ltd. | Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof |
| KR100308192B1 (ko) * | 1999-07-28 | 2001-11-01 | 윤종용 | 플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법 |
| US6914827B2 (en) * | 1999-07-28 | 2005-07-05 | Samsung Electronics Co., Ltd. | Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof |
| US6381179B1 (en) * | 2000-02-24 | 2002-04-30 | Advanced Micro Devices, Inc. | Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure |
| EP1229550B1 (en) * | 2001-02-05 | 2009-09-30 | STMicroelectronics S.r.l. | Method of erasing a flash memory |
| US6385093B1 (en) * | 2001-03-30 | 2002-05-07 | Advanced Micro Devices, Inc. | I/O partitioning system and methodology to reduce band-to-band tunneling current during erase |
| TW511203B (en) * | 2001-04-20 | 2002-11-21 | Macronix Int Co Ltd | Erase method of flash memory |
| CN100481268C (zh) * | 2001-06-25 | 2009-04-22 | 旺宏电子股份有限公司 | 一种闪存的抹除方法 |
| KR100456596B1 (ko) * | 2002-05-08 | 2004-11-09 | 삼성전자주식회사 | 부유트랩형 비휘발성 기억소자의 소거 방법 |
| US6891752B1 (en) | 2002-07-31 | 2005-05-10 | Advanced Micro Devices | System and method for erase voltage control during multiple sector erase of a flash memory device |
| US6628545B1 (en) * | 2002-11-26 | 2003-09-30 | Advanced Micro Devices, Inc. | Memory circuit for suppressing bit line current leakage |
| US7073104B1 (en) * | 2003-03-10 | 2006-07-04 | Advanced Micro Devices, Inc. | Method and system for applying testing voltage signal |
| TWI247311B (en) * | 2004-03-25 | 2006-01-11 | Elite Semiconductor Esmt | Circuit and method for preventing nonvolatile memory from over erasure |
| KR100781041B1 (ko) * | 2006-11-06 | 2007-11-30 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 그 소거 동작 제어 방법 |
| EP2302635B1 (en) * | 2009-09-18 | 2016-01-13 | STMicroelectronics Srl | Method for biasing an EEPROM non-volatile memory array and corresponding EEPROM non-volatile memory device |
| US8345485B2 (en) | 2011-02-09 | 2013-01-01 | Freescale Semiconductor, Inc. | Erase ramp pulse width control for non-volatile memory |
| US8937837B2 (en) * | 2012-05-08 | 2015-01-20 | Sandisk Technologies Inc. | Bit line BL isolation scheme during erase operation for non-volatile storage |
| US8891308B1 (en) | 2013-09-11 | 2014-11-18 | Sandisk Technologies Inc. | Dynamic erase voltage step size selection for 3D non-volatile memory |
| KR102606497B1 (ko) | 2016-06-27 | 2023-11-29 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 소거 방법 |
| US10559368B1 (en) | 2018-08-07 | 2020-02-11 | Sandisk Technologies Llc | Non-volatile memory with countermeasures for select gate disturb during program pre-charge |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5642311A (en) * | 1995-10-24 | 1997-06-24 | Advanced Micro Devices | Overerase correction for flash memory which limits overerase and prevents erase verify errors |
| US5841165A (en) * | 1995-11-21 | 1998-11-24 | Programmable Microelectronics Corporation | PMOS flash EEPROM cell with single poly |
| WO1998010471A1 (en) * | 1996-09-05 | 1998-03-12 | Macronix International Co., Ltd. | Triple well floating gate memory and operating method with isolated channel program, preprogram and erase processes |
| CN1252156A (zh) | 1997-04-11 | 2000-05-03 | 硅芯片公司 | 电擦除非易失性存储器 |
| JP3175665B2 (ja) * | 1997-10-24 | 2001-06-11 | 日本電気株式会社 | 不揮発性半導体記憶装置のデータ消去方法 |
| US5970460A (en) * | 1997-12-05 | 1999-10-19 | Lernout & Hauspie Speech Products N.V. | Speech recognition and editing system |
| US5978277A (en) * | 1998-04-06 | 1999-11-02 | Aplus Flash Technology, Inc. | Bias condition and X-decoder circuit of flash memory array |
-
1999
- 1999-05-06 US US09/307,259 patent/US6188609B1/en not_active Expired - Lifetime
-
2000
- 2000-05-04 TW TW089108495A patent/TW461095B/zh not_active IP Right Cessation
- 2000-05-05 WO PCT/US2000/012343 patent/WO2000068952A1/en not_active Ceased
- 2000-05-05 JP JP2000617455A patent/JP3811760B2/ja not_active Expired - Fee Related
- 2000-05-05 DE DE60001497T patent/DE60001497T2/de not_active Expired - Lifetime
- 2000-05-05 EP EP00930412A patent/EP1175680B1/en not_active Expired - Lifetime
- 2000-05-05 KR KR1020017014034A patent/KR100578582B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000068952A1 (en) | 2000-11-16 |
| EP1175680B1 (en) | 2003-02-26 |
| EP1175680A1 (en) | 2002-01-30 |
| JP2002544643A (ja) | 2002-12-24 |
| DE60001497D1 (de) | 2003-04-03 |
| KR100578582B1 (ko) | 2006-05-12 |
| TW461095B (en) | 2001-10-21 |
| JP3811760B2 (ja) | 2006-08-23 |
| US6188609B1 (en) | 2001-02-13 |
| KR20020042760A (ko) | 2002-06-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US |