DE4320089B4 - Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle - Google Patents
Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle Download PDFInfo
- Publication number
- DE4320089B4 DE4320089B4 DE4320089A DE4320089A DE4320089B4 DE 4320089 B4 DE4320089 B4 DE 4320089B4 DE 4320089 A DE4320089 A DE 4320089A DE 4320089 A DE4320089 A DE 4320089A DE 4320089 B4 DE4320089 B4 DE 4320089B4
- Authority
- DE
- Germany
- Prior art keywords
- layer
- capacitor
- producing
- electrode
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920011008A KR950012555B1 (ko) | 1992-06-24 | 1992-06-24 | 메모리셀 캐패시터의 유전막 누설전류 개선방법 |
| KR92-11008 | 1992-06-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4320089A1 DE4320089A1 (de) | 1994-01-05 |
| DE4320089B4 true DE4320089B4 (de) | 2007-05-03 |
Family
ID=19335176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4320089A Expired - Fee Related DE4320089B4 (de) | 1992-06-24 | 1993-06-17 | Verfahren zum Herstellen eines Kondensators einer Halbleiterspeicherzelle |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH0689968A (enrdf_load_stackoverflow) |
| KR (1) | KR950012555B1 (enrdf_load_stackoverflow) |
| DE (1) | DE4320089B4 (enrdf_load_stackoverflow) |
| TW (1) | TW230843B (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548854B1 (en) | 1997-12-22 | 2003-04-15 | Agere Systems Inc. | Compound, high-K, gate and capacitor insulator layer |
| EP0851473A3 (en) * | 1996-12-23 | 1998-07-22 | Lucent Technologies Inc. | Method of making a layer with high dielectric K, gate and capacitor insulator layer and device |
| KR19980060601A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 캐패시터 제조방법 |
| JP4353665B2 (ja) * | 2001-10-31 | 2009-10-28 | 三洋アクアテクノ株式会社 | 濾過装置 |
| KR20040019512A (ko) | 2002-08-28 | 2004-03-06 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
| US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4891684A (en) * | 1986-08-04 | 1990-01-02 | Hitachi, Ltd. | Semiconductor device |
-
1992
- 1992-06-24 KR KR1019920011008A patent/KR950012555B1/ko not_active Expired - Fee Related
-
1993
- 1993-05-28 TW TW082104256A patent/TW230843B/zh not_active IP Right Cessation
- 1993-06-17 DE DE4320089A patent/DE4320089B4/de not_active Expired - Fee Related
- 1993-06-24 JP JP5153478A patent/JPH0689968A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4891684A (en) * | 1986-08-04 | 1990-01-02 | Hitachi, Ltd. | Semiconductor device |
Non-Patent Citations (11)
| Title |
|---|
| E-1268 Sept. 24, 1992, Vol. 16, No. 459 |
| ISOBE, Chiharu, SAITOH, Masaki: Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposi- tion. In: Appl. Phys. Lett 56, (10) 5. March 1990, S. 907-909 |
| ISOBE, Chiharu, SAITOH, Masaki: Effect of ozone annealing on the dielectric properties of tantalumoxide thin films grown by chemical vapor deposition. In: Appl. Phys. Lett 56, (10) 5. March 1990,S. 907-909 * |
| JP 04-162 527 A, In: Patent Abstracts of Japan |
| JP 04162527 A, In: Patent Abstracts of Japan * |
| LO, G.Q. et al.: Metal-oxide-semiconductor charac- teristics of chemical vapor deposited Ta2O5 films. In: Appl. Phys. Lett. 60, (26), 29. June 1992, S. 3286-3288 |
| LO, G.Q. et al.: Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta¶2¶O¶5¶ films. In: Appl. Phys. Lett. 60, (26), 29. June 1992, S. 3286-3288 * |
| SHINRIKI, Hiroshi et al.: Promising Storage Capacitor Structures with Thin Ta¶2¶O¶5¶ Film for Low-Power High-Density DRAM's. In: IEEE Transactions on Electron Devices, Vol. 37, No. 9, Sept. 1990, S. 1939-1947 * |
| SHINRIKI, Hiroshi et al.: Promising Storage Capacitor Structures with Thin Ta2O5 Film for Low-Power High-Density DRAM's. In: IEEE Trans- actions on Electron Devices, Vol. 37, No. 9, Sept. 1990, S. 1939-1947 |
| SHINRIKI, Hiroshi, NAKATA, Masayuki: UV-O¶3¶ and Dry-O¶2¶: Two-Step Annealed Chemical Vapor-Depo- sited Ta¶2¶O¶5¶ Films for Storage Dielectrics of 64-Mb DRAM's. In: IEEE Transactions on Electron Devices, Vol. 38, No. 3, March 1991, S. 455-462 * |
| SHINRIKI, Hiroshi, NAKATA, Masayuki: UV-O3 and Dry-O2: Two-Step Annealed Chemical Vapor-Depo- sited Ta2O5 Films for Storage Dielectrics of 64-Mb DRAM's. In: IEEE Transactions on Electron Devices, Vol. 38, No. 3, March 1991, S. 455-462 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950012555B1 (ko) | 1995-10-18 |
| TW230843B (enrdf_load_stackoverflow) | 1994-09-21 |
| JPH0689968A (ja) | 1994-03-29 |
| DE4320089A1 (de) | 1994-01-05 |
| KR940001405A (ko) | 1994-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OR8 | Request for search as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8105 | Search report available | ||
| 8127 | New person/name/address of the applicant |
Owner name: LG SEMICON CO. LTD., CHUNGCHEONGBUK-DO, KR |
|
| 8110 | Request for examination paragraph 44 | ||
| 8364 | No opposition during term of opposition | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20130101 |