DE4230648B4 - Ladungsverschiebeelement und Verfahren zu dessen Herstellung - Google Patents
Ladungsverschiebeelement und Verfahren zu dessen Herstellung Download PDFInfo
- Publication number
- DE4230648B4 DE4230648B4 DE4230648A DE4230648A DE4230648B4 DE 4230648 B4 DE4230648 B4 DE 4230648B4 DE 4230648 A DE4230648 A DE 4230648A DE 4230648 A DE4230648 A DE 4230648A DE 4230648 B4 DE4230648 B4 DE 4230648B4
- Authority
- DE
- Germany
- Prior art keywords
- layer
- conductivity type
- insulation layer
- semiconductor
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 238000009413 insulation Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 65
- 239000004020 conductor Substances 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 13
- 238000009499 grossing Methods 0.000 description 12
- 239000005380 borophosphosilicate glass Substances 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/01—Manufacture or treatment
- H10D44/041—Manufacture or treatment having insulated gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/464—Two-phase CCD
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR91-16045 | 1991-09-14 | ||
| KR1019910016045A KR940009601B1 (ko) | 1991-09-14 | 1991-09-14 | 전하전송장치의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4230648A1 DE4230648A1 (de) | 1993-03-18 |
| DE4230648B4 true DE4230648B4 (de) | 2006-04-06 |
Family
ID=19319950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4230648A Expired - Fee Related DE4230648B4 (de) | 1991-09-14 | 1992-09-14 | Ladungsverschiebeelement und Verfahren zu dessen Herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5240873A (enExample) |
| JP (1) | JP3153647B2 (enExample) |
| KR (1) | KR940009601B1 (enExample) |
| DE (1) | DE4230648B4 (enExample) |
| TW (1) | TW216470B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5245212A (en) * | 1989-12-26 | 1993-09-14 | Texas Instruments Incorporated | Self-aligned field-plate isolation between active elements |
| US5298448A (en) * | 1992-12-18 | 1994-03-29 | Eastman Kodak Company | Method of making two-phase buried channel planar gate CCD |
| US5292682A (en) * | 1993-07-06 | 1994-03-08 | Eastman Kodak Company | Method of making two-phase charge coupled device |
| US5460997A (en) * | 1995-01-23 | 1995-10-24 | Eastman Kodak Company | Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes |
| US5712203A (en) * | 1995-12-11 | 1998-01-27 | United Microelectronics Corporation | Process for fabricating read-only memory cells using removable barrier strips |
| KR100192328B1 (ko) * | 1996-04-03 | 1999-06-15 | 구본준 | 양방향 수평전하 전송소자 |
| KR100209758B1 (ko) * | 1996-06-26 | 1999-07-15 | 구본준 | 고체 촬상 소자 및 그의 제조 방법 |
| JP3204169B2 (ja) | 1997-07-23 | 2001-09-04 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6300160B1 (en) * | 1999-11-18 | 2001-10-09 | Eastman Kodak Company | Process for charge coupled image sensor with U-shaped gates |
| US6489246B1 (en) * | 2001-05-01 | 2002-12-03 | Eastman Kodak Company | Method for manufacturing charge-coupled image sensors |
| JP5408964B2 (ja) * | 2008-10-30 | 2014-02-05 | シャープ株式会社 | 固体撮像素子および電子情報機器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| US4083098A (en) * | 1975-10-15 | 1978-04-11 | U.S. Philips Corporation | Method of manufacturing electronic devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5915498B2 (ja) * | 1975-08-09 | 1984-04-10 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JPS53110385A (en) * | 1977-03-08 | 1978-09-27 | Matsushita Electric Ind Co Ltd | Manufacture of ccd |
| JPH0714052B2 (ja) * | 1986-11-05 | 1995-02-15 | 富士写真フイルム株式会社 | 電荷結合デバイスの電極形成方法 |
| JPS63244882A (ja) * | 1987-03-31 | 1988-10-12 | Rohm Co Ltd | 電荷結合素子の製造方法 |
-
1991
- 1991-09-14 KR KR1019910016045A patent/KR940009601B1/ko not_active Expired - Lifetime
-
1992
- 1992-09-08 TW TW081107092A patent/TW216470B/zh not_active IP Right Cessation
- 1992-09-14 US US07/944,879 patent/US5240873A/en not_active Expired - Lifetime
- 1992-09-14 JP JP24445792A patent/JP3153647B2/ja not_active Expired - Lifetime
- 1992-09-14 DE DE4230648A patent/DE4230648B4/de not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| US4083098A (en) * | 1975-10-15 | 1978-04-11 | U.S. Philips Corporation | Method of manufacturing electronic devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06326136A (ja) | 1994-11-25 |
| TW216470B (enExample) | 1993-11-21 |
| KR940009601B1 (ko) | 1994-10-15 |
| US5240873A (en) | 1993-08-31 |
| KR930006828A (ko) | 1993-04-22 |
| JP3153647B2 (ja) | 2001-04-09 |
| DE4230648A1 (de) | 1993-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: HYNIX SEMICONDUCTOR INC., ICHON, KYONGGI, KR |
|
| 8127 | New person/name/address of the applicant |
Owner name: MAGNACHIP SEMICONDUCTOR, LTD., CHEONGJU, KR |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |