KR940009601B1 - 전하전송장치의 제조방법 - Google Patents

전하전송장치의 제조방법 Download PDF

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Publication number
KR940009601B1
KR940009601B1 KR1019910016045A KR910016045A KR940009601B1 KR 940009601 B1 KR940009601 B1 KR 940009601B1 KR 1019910016045 A KR1019910016045 A KR 1019910016045A KR 910016045 A KR910016045 A KR 910016045A KR 940009601 B1 KR940009601 B1 KR 940009601B1
Authority
KR
South Korea
Prior art keywords
layer
oxide film
transfer electrode
silicon oxide
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019910016045A
Other languages
English (en)
Korean (ko)
Other versions
KR930006828A (ko
Inventor
우야신지
Original Assignee
금성일렉트론 주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사, 문정환 filed Critical 금성일렉트론 주식회사
Priority to KR1019910016045A priority Critical patent/KR940009601B1/ko
Priority to TW081107092A priority patent/TW216470B/zh
Priority to JP24445792A priority patent/JP3153647B2/ja
Priority to DE4230648A priority patent/DE4230648B4/de
Priority to US07/944,879 priority patent/US5240873A/en
Publication of KR930006828A publication Critical patent/KR930006828A/ko
Application granted granted Critical
Publication of KR940009601B1 publication Critical patent/KR940009601B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H10D44/041—Manufacture or treatment having insulated gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
KR1019910016045A 1991-09-14 1991-09-14 전하전송장치의 제조방법 Expired - Lifetime KR940009601B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910016045A KR940009601B1 (ko) 1991-09-14 1991-09-14 전하전송장치의 제조방법
TW081107092A TW216470B (enExample) 1991-09-14 1992-09-08
JP24445792A JP3153647B2 (ja) 1991-09-14 1992-09-14 電荷転送装置の製造方法
DE4230648A DE4230648B4 (de) 1991-09-14 1992-09-14 Ladungsverschiebeelement und Verfahren zu dessen Herstellung
US07/944,879 US5240873A (en) 1991-09-14 1992-09-14 Method of making charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910016045A KR940009601B1 (ko) 1991-09-14 1991-09-14 전하전송장치의 제조방법

Publications (2)

Publication Number Publication Date
KR930006828A KR930006828A (ko) 1993-04-22
KR940009601B1 true KR940009601B1 (ko) 1994-10-15

Family

ID=19319950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910016045A Expired - Lifetime KR940009601B1 (ko) 1991-09-14 1991-09-14 전하전송장치의 제조방법

Country Status (5)

Country Link
US (1) US5240873A (enExample)
JP (1) JP3153647B2 (enExample)
KR (1) KR940009601B1 (enExample)
DE (1) DE4230648B4 (enExample)
TW (1) TW216470B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245212A (en) * 1989-12-26 1993-09-14 Texas Instruments Incorporated Self-aligned field-plate isolation between active elements
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5460997A (en) * 1995-01-23 1995-10-24 Eastman Kodak Company Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes
US5712203A (en) * 1995-12-11 1998-01-27 United Microelectronics Corporation Process for fabricating read-only memory cells using removable barrier strips
KR100192328B1 (ko) * 1996-04-03 1999-06-15 구본준 양방향 수평전하 전송소자
KR100209758B1 (ko) * 1996-06-26 1999-07-15 구본준 고체 촬상 소자 및 그의 제조 방법
JP3204169B2 (ja) 1997-07-23 2001-09-04 日本電気株式会社 半導体装置の製造方法
US6300160B1 (en) * 1999-11-18 2001-10-09 Eastman Kodak Company Process for charge coupled image sensor with U-shaped gates
US6489246B1 (en) * 2001-05-01 2002-12-03 Eastman Kodak Company Method for manufacturing charge-coupled image sensors
JP5408964B2 (ja) * 2008-10-30 2014-02-05 シャープ株式会社 固体撮像素子および電子情報機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
JPS5915498B2 (ja) * 1975-08-09 1984-04-10 松下電器産業株式会社 半導体装置の製造方法
GB1527894A (en) * 1975-10-15 1978-10-11 Mullard Ltd Methods of manufacturing electronic devices
JPS53110385A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of ccd
JPH0714052B2 (ja) * 1986-11-05 1995-02-15 富士写真フイルム株式会社 電荷結合デバイスの電極形成方法
JPS63244882A (ja) * 1987-03-31 1988-10-12 Rohm Co Ltd 電荷結合素子の製造方法

Also Published As

Publication number Publication date
JPH06326136A (ja) 1994-11-25
TW216470B (enExample) 1993-11-21
US5240873A (en) 1993-08-31
KR930006828A (ko) 1993-04-22
JP3153647B2 (ja) 2001-04-09
DE4230648A1 (de) 1993-03-18
DE4230648B4 (de) 2006-04-06

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