TW216470B - - Google Patents

Info

Publication number
TW216470B
TW216470B TW081107092A TW81107092A TW216470B TW 216470 B TW216470 B TW 216470B TW 081107092 A TW081107092 A TW 081107092A TW 81107092 A TW81107092 A TW 81107092A TW 216470 B TW216470 B TW 216470B
Authority
TW
Taiwan
Application number
TW081107092A
Original Assignee
Gold Star Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co filed Critical Gold Star Co
Application granted granted Critical
Publication of TW216470B publication Critical patent/TW216470B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD
TW081107092A 1991-09-14 1992-09-08 TW216470B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910016045A KR940009601B1 (ko) 1991-09-14 1991-09-14 전하전송장치의 제조방법

Publications (1)

Publication Number Publication Date
TW216470B true TW216470B (zh) 1993-11-21

Family

ID=19319950

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081107092A TW216470B (zh) 1991-09-14 1992-09-08

Country Status (5)

Country Link
US (1) US5240873A (zh)
JP (1) JP3153647B2 (zh)
KR (1) KR940009601B1 (zh)
DE (1) DE4230648B4 (zh)
TW (1) TW216470B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245212A (en) * 1989-12-26 1993-09-14 Texas Instruments Incorporated Self-aligned field-plate isolation between active elements
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5460997A (en) * 1995-01-23 1995-10-24 Eastman Kodak Company Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes
US5712203A (en) * 1995-12-11 1998-01-27 United Microelectronics Corporation Process for fabricating read-only memory cells using removable barrier strips
KR100192328B1 (ko) * 1996-04-03 1999-06-15 구본준 양방향 수평전하 전송소자
KR100209758B1 (ko) * 1996-06-26 1999-07-15 구본준 고체 촬상 소자 및 그의 제조 방법
JP3204169B2 (ja) 1997-07-23 2001-09-04 日本電気株式会社 半導体装置の製造方法
US6300160B1 (en) * 1999-11-18 2001-10-09 Eastman Kodak Company Process for charge coupled image sensor with U-shaped gates
US6489246B1 (en) * 2001-05-01 2002-12-03 Eastman Kodak Company Method for manufacturing charge-coupled image sensors
JP5408964B2 (ja) * 2008-10-30 2014-02-05 シャープ株式会社 固体撮像素子および電子情報機器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
JPS5915498B2 (ja) * 1975-08-09 1984-04-10 松下電器産業株式会社 半導体装置の製造方法
GB1527894A (en) * 1975-10-15 1978-10-11 Mullard Ltd Methods of manufacturing electronic devices
JPS53110385A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of ccd
JPH0714052B2 (ja) * 1986-11-05 1995-02-15 富士写真フイルム株式会社 電荷結合デバイスの電極形成方法
JPS63244882A (ja) * 1987-03-31 1988-10-12 Rohm Co Ltd 電荷結合素子の製造方法

Also Published As

Publication number Publication date
DE4230648B4 (de) 2006-04-06
KR940009601B1 (ko) 1994-10-15
JPH06326136A (ja) 1994-11-25
US5240873A (en) 1993-08-31
JP3153647B2 (ja) 2001-04-09
KR930006828A (ko) 1993-04-22
DE4230648A1 (de) 1993-03-18

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent