DE3942931A1 - Aufnehmer - Google Patents

Aufnehmer

Info

Publication number
DE3942931A1
DE3942931A1 DE3942931A DE3942931A DE3942931A1 DE 3942931 A1 DE3942931 A1 DE 3942931A1 DE 3942931 A DE3942931 A DE 3942931A DE 3942931 A DE3942931 A DE 3942931A DE 3942931 A1 DE3942931 A1 DE 3942931A1
Authority
DE
Germany
Prior art keywords
wafers
transducer
roughness
micron
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3942931A
Other languages
German (de)
English (en)
Other versions
DE3942931C2 (enrdf_load_stackoverflow
Inventor
Tatsu Nozawa
Kazunori Meguro
Yoshiyuki Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of DE3942931A1 publication Critical patent/DE3942931A1/de
Application granted granted Critical
Publication of DE3942931C2 publication Critical patent/DE3942931C2/de
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE3942931A 1988-12-26 1989-12-23 Aufnehmer Granted DE3942931A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63326236A JPH02174116A (ja) 1988-12-26 1988-12-26 サセプタ

Publications (2)

Publication Number Publication Date
DE3942931A1 true DE3942931A1 (de) 1990-06-28
DE3942931C2 DE3942931C2 (enrdf_load_stackoverflow) 1993-07-15

Family

ID=18185510

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3942931A Granted DE3942931A1 (de) 1988-12-26 1989-12-23 Aufnehmer

Country Status (4)

Country Link
JP (1) JPH02174116A (enrdf_load_stackoverflow)
DE (1) DE3942931A1 (enrdf_load_stackoverflow)
FR (1) FR2640964B1 (enrdf_load_stackoverflow)
IT (1) IT1236887B (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4026244A1 (de) * 1990-08-18 1992-02-20 Ant Nachrichtentech Substrattraeger
DE4222512A1 (de) * 1992-07-09 1994-01-13 Ant Nachrichtentech Verfahren zur Herstellung von Bauelementen auf einem Substrat
US5403401A (en) * 1993-03-04 1995-04-04 Xycarb B.V. Substrate carrier
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
US5645646A (en) * 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
WO2002097872A1 (fr) * 2001-05-31 2002-12-05 Shin-Etsu Handotai Co., Ltd. Procede de production d'une tranche de semi-conducteur et suscepteur utilise a cet effet
EP0840358A3 (en) * 1996-11-05 2004-01-14 Applied Materials, Inc. Sloped substrate support
DE10334940A1 (de) * 2003-07-31 2005-03-03 Infineon Technologies Ag Trägereinrichtung

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492447A (ja) * 1990-08-08 1992-03-25 Shin Etsu Chem Co Ltd 無機薄膜の成膜方法
DE19547601A1 (de) * 1995-12-20 1997-06-26 Sel Alcatel Ag Vorrichtung zum Sintern von porösen Schichten
JP3887052B2 (ja) * 1996-12-13 2007-02-28 東洋炭素株式会社 気相成長用サセプター
US6717116B1 (en) 1999-08-10 2004-04-06 Ibiden Co., Ltd. Semiconductor production device ceramic plate
JP2002373930A (ja) * 2001-06-14 2002-12-26 Hitachi Chem Co Ltd サセプタ−
JP4688363B2 (ja) * 2001-07-31 2011-05-25 京セラ株式会社 ウエハ加熱装置
US8021968B2 (en) 2007-08-03 2011-09-20 Shin-Etsu Handotai Co., Ltd. Susceptor and method for manufacturing silicon epitaxial wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1374137A (en) * 1971-11-29 1974-11-13 Crane Packing Co Apparatus for holding a workpiece for a polishing operation
DE8008012U1 (de) * 1980-09-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halterung für Halbleiterscheiben
DE3438980A1 (de) * 1983-11-01 1985-05-09 Varian Associates, Inc., Palo Alto, Calif. Halterung zum stuetzen eines werkstuecks
DE3439371C2 (enrdf_load_stackoverflow) * 1983-10-31 1988-05-11 Toshiba Kikai K.K., Tokio/Tokyo, Jp

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152465A (en) * 1978-05-22 1979-11-30 Nec Corp Manufacture of epitaxial wafer
JPS61242994A (ja) * 1985-04-22 1986-10-29 Toshiba Corp 縦型気相成長装置
JP2671914B2 (ja) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 サセプタ
US4761134B1 (en) * 1987-03-30 1993-11-16 Silicon carbide diffusion furnace components with an impervious coating thereon
JPS6447019A (en) * 1987-08-18 1989-02-21 Denki Kagaku Kogyo Kk Glassy carbon coated susceptor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8008012U1 (de) * 1980-09-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halterung für Halbleiterscheiben
GB1374137A (en) * 1971-11-29 1974-11-13 Crane Packing Co Apparatus for holding a workpiece for a polishing operation
DE3439371C2 (enrdf_load_stackoverflow) * 1983-10-31 1988-05-11 Toshiba Kikai K.K., Tokio/Tokyo, Jp
DE3438980A1 (de) * 1983-11-01 1985-05-09 Varian Associates, Inc., Palo Alto, Calif. Halterung zum stuetzen eines werkstuecks

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4026244A1 (de) * 1990-08-18 1992-02-20 Ant Nachrichtentech Substrattraeger
DE4222512A1 (de) * 1992-07-09 1994-01-13 Ant Nachrichtentech Verfahren zur Herstellung von Bauelementen auf einem Substrat
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5403401A (en) * 1993-03-04 1995-04-04 Xycarb B.V. Substrate carrier
US6146464A (en) * 1994-02-25 2000-11-14 Applied Materials, Inc. Susceptor for deposition apparatus
US5645646A (en) * 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
EP0840358A3 (en) * 1996-11-05 2004-01-14 Applied Materials, Inc. Sloped substrate support
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US6706205B2 (en) 1999-06-28 2004-03-16 General Electric Company Semiconductor processing article
WO2002097872A1 (fr) * 2001-05-31 2002-12-05 Shin-Etsu Handotai Co., Ltd. Procede de production d'une tranche de semi-conducteur et suscepteur utilise a cet effet
DE10334940A1 (de) * 2003-07-31 2005-03-03 Infineon Technologies Ag Trägereinrichtung
DE10334940B4 (de) * 2003-07-31 2007-08-23 Infineon Technologies Ag Trägereinrichtung

Also Published As

Publication number Publication date
IT1236887B (it) 1993-04-26
IT8922733A0 (it) 1989-12-19
FR2640964A1 (enrdf_load_stackoverflow) 1990-06-29
IT8922733A1 (it) 1991-06-19
DE3942931C2 (enrdf_load_stackoverflow) 1993-07-15
JPH02174116A (ja) 1990-07-05
FR2640964B1 (enrdf_load_stackoverflow) 1993-06-11

Similar Documents

Publication Publication Date Title
DE3942931A1 (de) Aufnehmer
DE69325325T2 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69722832T2 (de) Verfahren zum Transportieren einer dünnen Schicht von einem Anfangssubstrat auf ein Endsubstrat
DE10329072B4 (de) Halbleiterwafer-Behandlungselement
DE69507990T2 (de) Verfahren und Vorrichtung zum Hochglanzpolieren eines Teiles von einem Wafer
EP0208315B1 (de) Verfahren zum beidseitigen abtragenden Bearbeiten von scheibenförmigen Werkstücken, insbesondere Halbleiterscheiben
DE69801546T2 (de) Verfahren zur Herstellung eines Elementes für eine Dünnfilmherstellungsvorrichtung und das Element für diese Vorrichtung
DE69415838T2 (de) Ein Substrathalter
DE4342976C2 (de) Vertikale Vorrichtung zur Wärmebehandlung von Halbleiterplättchen und Verfahren zur Herstellung dieser Vorrichtung
DE112014000888B4 (de) Verfahren zur Herstellung einer Elastische-Wellen-Vorrichtung
DE69410514T2 (de) Verfahren zum Herstellen von Halbleiterscheiben
DE10323302A1 (de) Vakuumunterstützte adhäsive Haltevorrichtung für Dünnstglas
DE102016222005B4 (de) Verfahren der Fertigung einer Halbleitervorrichtung
EP0914676A2 (de) Bauteil aus quarzglas für die verwendung bei der halbleiterherstellung
DE3524301A1 (de) Verfahren zum herstellen von halbleiterelementen
DE2322952C3 (de) Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen
DE2901968C2 (enrdf_load_stackoverflow)
DE2947270C3 (de) Keramiksubstrat für Halbleiterbauelemente
EP0857542A1 (de) Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe
DE102014116342B4 (de) Substrathaltevorrichtung und Verfahren zum Prozessieren eines Substrats
JPH0534081B2 (enrdf_load_stackoverflow)
DE102024101618A1 (de) Siliziumcarbid-chip, halbleitervorrichtung und verfahren zum herstellen eines siliziumcarbid-chips
DE3837584A1 (de) Verfahren und vorrichtung zum vertikalen aufdampfaufwachsen
DE19741971A1 (de) Verfahren zum Herstellen Direct-Wafer-Bond Si/Si02/Si-Substrate
DE2014246B2 (de) Verfahren zum Unterteilen einer Halbleiterplatte in mehrere Halbleiterplättchen

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee