DE3889263D1 - Elektronische Anordnungen unter Verwendung von supraleitenden Materialien. - Google Patents
Elektronische Anordnungen unter Verwendung von supraleitenden Materialien.Info
- Publication number
- DE3889263D1 DE3889263D1 DE3889263T DE3889263T DE3889263D1 DE 3889263 D1 DE3889263 D1 DE 3889263D1 DE 3889263 T DE3889263 T DE 3889263T DE 3889263 T DE3889263 T DE 3889263T DE 3889263 D1 DE3889263 D1 DE 3889263D1
- Authority
- DE
- Germany
- Prior art keywords
- electronic devices
- superconducting materials
- superconducting
- materials
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/437—Superconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures
- H10N60/207—Field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62210863A JPH0634415B2 (ja) | 1987-08-24 | 1987-08-24 | 酸化物超電導材料を用いた電子装置 |
JP62210862A JPS6453477A (en) | 1987-08-24 | 1987-08-24 | Electronic device using superconducting material |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3889263D1 true DE3889263D1 (de) | 1994-06-01 |
DE3889263T2 DE3889263T2 (de) | 1994-08-11 |
Family
ID=26518306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3889263T Expired - Fee Related DE3889263T2 (de) | 1987-08-24 | 1988-08-24 | Elektronische Anordnungen unter Verwendung von supraleitenden Materialien. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5138401A (de) |
EP (1) | EP0305167B1 (de) |
CN (1) | CN1014382B (de) |
DE (1) | DE3889263T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5256897A (en) * | 1988-11-28 | 1993-10-26 | Hitachi, Ltd. | Oxide superconducting device |
JP3020524B2 (ja) * | 1988-11-28 | 2000-03-15 | 株式会社日立製作所 | 酸化物超電導素子 |
US5380704A (en) * | 1990-02-02 | 1995-01-10 | Hitachi, Ltd. | Superconducting field effect transistor with increased channel length |
EP0460356A3 (en) * | 1990-06-06 | 1992-11-04 | International Business Machines Corporation | Contacts to semiconductors having zero resistance |
FR2674067B1 (fr) * | 1991-03-15 | 1993-05-28 | Thomson Csf | Dispositif semiconducteur a effet josephson. |
JPH05304320A (ja) * | 1991-03-27 | 1993-11-16 | Semiconductor Energy Lab Co Ltd | 超伝導薄膜トランジスタ及びその作製方法 |
JPH0555514A (ja) * | 1991-08-28 | 1993-03-05 | Hitachi Ltd | 半導体装置およびその製造方法 |
US5965270A (en) * | 1996-07-19 | 1999-10-12 | National Science Council | Metal/amorphous material/metal antifuse structure with a barrier enhancement layer |
AU2002246934A1 (en) * | 2001-01-03 | 2002-07-16 | Mississippi State University | Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
US20030040171A1 (en) * | 2001-08-22 | 2003-02-27 | Weimer Ronald A. | Method of composite gate formation |
US8204564B2 (en) * | 2007-11-07 | 2012-06-19 | Brookhaven Science Associates, Llc | High temperature interfacial superconductivity |
KR20120027708A (ko) * | 2010-09-13 | 2012-03-22 | 삼성모바일디스플레이주식회사 | X-선 검출기 패널 |
US9653398B1 (en) * | 2015-12-08 | 2017-05-16 | Northrop Grumman Systems Corporation | Non-oxide based dielectrics for superconductor devices |
US10276504B2 (en) | 2017-05-17 | 2019-04-30 | Northrop Grumman Systems Corporation | Preclean and deposition methodology for superconductor interconnects |
US11621386B2 (en) * | 2019-04-02 | 2023-04-04 | International Business Machines Corporation | Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device |
US11727295B2 (en) * | 2019-04-02 | 2023-08-15 | International Business Machines Corporation | Tunable superconducting resonator for quantum computing devices |
US11882770B2 (en) | 2020-12-10 | 2024-01-23 | International Business Machines Corporation | Area-selective deposition of metal nitride to fabricate devices |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5693375A (en) * | 1979-12-26 | 1981-07-28 | Shunpei Yamazaki | Photoelectric conversion device |
US4589001A (en) * | 1980-07-09 | 1986-05-13 | Agency Of Industrial Science & Technology | Quasiparticle injection control type superconducting device |
JPS57106186A (en) * | 1980-12-24 | 1982-07-01 | Fujitsu Ltd | Josephson element |
JPS57206286A (en) * | 1981-06-09 | 1982-12-17 | Sanyo Electric Co Ltd | Controlling method of motor |
JPS5952885A (ja) * | 1982-09-20 | 1984-03-27 | Agency Of Ind Science & Technol | ス−パ・シヨツトキ・トランジスタおよびその製造方法 |
US4816879A (en) * | 1982-12-08 | 1989-03-28 | North American Philips Corporation, Signetics Division | Schottky-type rectifier having controllable barrier height |
JPH0648733B2 (ja) * | 1984-01-25 | 1994-06-22 | 株式会社日立製作所 | 極低温用半導体装置 |
EP0667645A1 (de) * | 1984-11-05 | 1995-08-16 | Hitachi, Ltd. | Supraleitende Anordnung |
JPS61171179A (ja) * | 1985-01-24 | 1986-08-01 | Nippon Telegr & Teleph Corp <Ntt> | 半導体結合超伝導素子 |
JPS61206279A (ja) * | 1985-03-11 | 1986-09-12 | Hitachi Ltd | 超電導素子 |
JPS62122287A (ja) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | 超伝導トランジスタ |
JP2540511B2 (ja) * | 1986-02-27 | 1996-10-02 | 株式会社日立製作所 | 超電導ホトトランジスタ |
JPH0666480B2 (ja) * | 1986-03-13 | 1994-08-24 | 日本電信電話株式会社 | ジヨセフソン接合素子 |
JPS6331181A (ja) * | 1986-07-25 | 1988-02-09 | Hitachi Ltd | 超伝導トランジスタ及びその製造方法 |
DE3810494C2 (de) * | 1987-03-27 | 1998-08-20 | Hitachi Ltd | Integrierte Halbleiterschaltungseinrichtung mit supraleitender Schicht |
US4960751A (en) * | 1987-04-01 | 1990-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Electric circuit having superconducting multilayered structure and manufacturing method for same |
-
1988
- 1988-08-24 DE DE3889263T patent/DE3889263T2/de not_active Expired - Fee Related
- 1988-08-24 CN CN88106274A patent/CN1014382B/zh not_active Expired
- 1988-08-24 EP EP88307845A patent/EP0305167B1/de not_active Expired - Lifetime
-
1991
- 1991-10-17 US US07/780,441 patent/US5138401A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5138401A (en) | 1992-08-11 |
CN1014382B (zh) | 1991-10-16 |
EP0305167B1 (de) | 1994-04-27 |
CN1031627A (zh) | 1989-03-08 |
DE3889263T2 (de) | 1994-08-11 |
EP0305167A2 (de) | 1989-03-01 |
EP0305167A3 (en) | 1989-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |