DE3876145T2 - Verfahren und vorrichtung zur oberflaechenbehandlung. - Google Patents

Verfahren und vorrichtung zur oberflaechenbehandlung.

Info

Publication number
DE3876145T2
DE3876145T2 DE8888108815T DE3876145T DE3876145T2 DE 3876145 T2 DE3876145 T2 DE 3876145T2 DE 8888108815 T DE8888108815 T DE 8888108815T DE 3876145 T DE3876145 T DE 3876145T DE 3876145 T2 DE3876145 T2 DE 3876145T2
Authority
DE
Germany
Prior art keywords
surface treatment
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888108815T
Other languages
English (en)
Other versions
DE3876145D1 (de
Inventor
Keizo Suzuki
Susumu Hiraoka
Tatsumi Mizutani
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62139724A external-priority patent/JP2585272B2/ja
Priority claimed from JP62217807A external-priority patent/JP2533561B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3876145D1 publication Critical patent/DE3876145D1/de
Application granted granted Critical
Publication of DE3876145T2 publication Critical patent/DE3876145T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
DE8888108815T 1987-06-05 1988-06-01 Verfahren und vorrichtung zur oberflaechenbehandlung. Expired - Fee Related DE3876145T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62139724A JP2585272B2 (ja) 1987-06-05 1987-06-05 表面処理方法
JP62217807A JP2533561B2 (ja) 1987-09-02 1987-09-02 高速中性粒子線形成装置

Publications (2)

Publication Number Publication Date
DE3876145D1 DE3876145D1 (de) 1993-01-07
DE3876145T2 true DE3876145T2 (de) 1993-04-01

Family

ID=26472432

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888108815T Expired - Fee Related DE3876145T2 (de) 1987-06-05 1988-06-01 Verfahren und vorrichtung zur oberflaechenbehandlung.

Country Status (4)

Country Link
US (1) US5108778A (de)
EP (1) EP0293879B1 (de)
KR (1) KR960016218B1 (de)
DE (1) DE3876145T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2880322B2 (ja) * 1991-05-24 1999-04-05 キヤノン株式会社 堆積膜の形成方法
US5304775A (en) * 1991-06-06 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Method of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert element
US5286331A (en) * 1991-11-01 1994-02-15 International Business Machines Corporation Supersonic molecular beam etching of surfaces
US5421888A (en) * 1992-05-12 1995-06-06 Sony Corporation Low pressure CVD apparatus comprising gas distribution collimator
US5290358A (en) * 1992-09-30 1994-03-01 International Business Machines Corporation Apparatus for directional low pressure chemical vapor deposition (DLPCVD)
DE4317623C2 (de) * 1993-05-27 2003-08-21 Bosch Gmbh Robert Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung
JP3432545B2 (ja) * 1993-07-05 2003-08-04 株式会社荏原製作所 高速原子線を用いる加工装置
JP3394602B2 (ja) * 1993-07-05 2003-04-07 株式会社荏原製作所 高速原子線を用いた加工方法
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5738768A (en) * 1995-10-31 1998-04-14 Caterpillar Inc. Process for reducing particle defects in arc vapor deposition coatings
JP2959763B1 (ja) * 1998-01-13 1999-10-06 島田理化工業株式会社 ウェーハ洗浄装置
DE10023946A1 (de) * 2000-05-16 2001-11-29 Bosch Gmbh Robert Vorrichtung zum anisotropen Plasmaätzen
JP2001354492A (ja) * 2000-06-07 2001-12-25 Sumitomo Electric Ind Ltd ダイヤモンド膜の形成方法および成膜装置
US7339208B2 (en) * 2005-05-13 2008-03-04 Coldwatt, Inc. Semiconductor device having multiple lateral channels and method of forming the same
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) * 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164581A (en) * 1982-04-13 1986-03-26 Michael Paul Neary Chemical method
JPS58202533A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 表面処理装置
JPS59135730A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd 表面改質装置
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
JPS61113775A (ja) * 1984-11-07 1986-05-31 Hitachi Ltd 表面処理方法
JPH0682642B2 (ja) * 1985-08-09 1994-10-19 株式会社日立製作所 表面処理装置

Also Published As

Publication number Publication date
DE3876145D1 (de) 1993-01-07
EP0293879A1 (de) 1988-12-07
KR890001151A (ko) 1989-03-18
US5108778A (en) 1992-04-28
EP0293879B1 (de) 1992-11-25
KR960016218B1 (ko) 1996-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee