DE3839714C2 - - Google Patents

Info

Publication number
DE3839714C2
DE3839714C2 DE3839714A DE3839714A DE3839714C2 DE 3839714 C2 DE3839714 C2 DE 3839714C2 DE 3839714 A DE3839714 A DE 3839714A DE 3839714 A DE3839714 A DE 3839714A DE 3839714 C2 DE3839714 C2 DE 3839714C2
Authority
DE
Germany
Prior art keywords
mixture
cresol
photosensitive
photoresist
novolak resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3839714A
Other languages
German (de)
English (en)
Other versions
DE3839714A1 (de
Inventor
Toru Yokohama Jp Ushirogouchi
Shuji Kawasaki Jp Hayase
Yasunobu Onishi
Rumiko Yokohama Jp Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3839714A1 publication Critical patent/DE3839714A1/de
Application granted granted Critical
Publication of DE3839714C2 publication Critical patent/DE3839714C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE3839714A 1987-11-26 1988-11-24 Lichtempfindliche harzmasse Granted DE3839714A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29797187 1987-11-26
JP63072734A JP2693472B2 (ja) 1987-11-26 1988-03-26 レジスト

Publications (2)

Publication Number Publication Date
DE3839714A1 DE3839714A1 (de) 1989-06-08
DE3839714C2 true DE3839714C2 (enExample) 1990-10-25

Family

ID=26413870

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3839714A Granted DE3839714A1 (de) 1987-11-26 1988-11-24 Lichtempfindliche harzmasse

Country Status (4)

Country Link
US (1) US4988601A (enExample)
JP (1) JP2693472B2 (enExample)
KR (1) KR910004849B1 (enExample)
DE (1) DE3839714A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
US5260174A (en) * 1989-02-17 1993-11-09 Dai Nippon Insatsu Kabushiki Kaisha Method and apparatus for forming a coating of a viscous liquid on an object
DE69032744T2 (de) * 1989-09-08 1999-06-02 Olin Microelectronic Chemicals, Inc., Norwalk, Conn. Vollständig substituierte novalak-polymere enthaltende strahlungsempfindliche zusammensetzungen
US5324620A (en) * 1989-09-08 1994-06-28 Ocg Microeletronic Materials, Inc. Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde
JP3063148B2 (ja) * 1989-12-27 2000-07-12 住友化学工業株式会社 ポジ型レジスト組成物
JPH03294861A (ja) * 1990-04-13 1991-12-26 Mitsubishi Petrochem Co Ltd ポジ型フォトレジスト組成物
JPH04178451A (ja) * 1990-11-09 1992-06-25 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
US5413896A (en) * 1991-01-24 1995-05-09 Japan Synthetic Rubber Co., Ltd. I-ray sensitive positive resist composition
US5372909A (en) * 1991-09-24 1994-12-13 Mitsubishi Kasei Corporation Photosensitive resin composition comprising an alkali-soluble resin made from a phenolic compound and at least 2 different aldehydes
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
US5340687A (en) * 1992-05-06 1994-08-23 Ocg Microelectronic Materials, Inc. Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
EP0662222B1 (en) * 1992-09-28 1997-01-22 Hoechst Celanese Corporation Positive-working photoresist composition
US5371169A (en) * 1992-09-28 1994-12-06 Hoechst Celanese Corporation Novolak resin mixtures
US6280910B1 (en) 1992-11-23 2001-08-28 Pioneer Electronic Corporation Photoresist for optical disc and method of preparing optical disc utilizing photoresist
US5374693A (en) * 1992-12-29 1994-12-20 Hoechst Celanese Corporation Novolak resin blends for photoresist applications
JPH06342214A (ja) * 1993-04-09 1994-12-13 Mitsubishi Electric Corp 微細レジストパターンの形成方法
JP3329026B2 (ja) * 1993-10-19 2002-09-30 住友化学工業株式会社 ポジ型フォトレジスト組成物
DE4401940A1 (de) * 1994-01-24 1995-07-27 Hoechst Ag Positiv arbeitendes Aufzeichnungsmaterial mit verbesserter Entwickelbarkeit
JP3434340B2 (ja) * 1994-03-29 2003-08-04 東京応化工業株式会社 高感度ポジ型ホトレジスト組成物
IT1275432B (it) * 1995-05-19 1997-08-07 Plurimetal Srl Composizioni fotosensibili per stampa offset ad acidita' controllata
JPH0990622A (ja) * 1995-09-22 1997-04-04 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6905809B2 (en) * 2003-04-01 2005-06-14 Clariant Finance (Bvi) Limited Photoresist compositions
US6790582B1 (en) 2003-04-01 2004-09-14 Clariant Finance Bvi Limited Photoresist compositions
US8822123B2 (en) * 2012-07-13 2014-09-02 Momentive Specialty Chemicals Inc. Polymeric materials and methods for making the polymeric materials
KR20170073911A (ko) * 2015-12-21 2017-06-29 삼성전자주식회사 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
CN111505902B (zh) * 2020-05-27 2024-02-20 北京北旭电子材料有限公司 光刻胶组合物及其制备方法
CN112034687B (zh) * 2020-09-08 2021-08-10 江苏艾森半导体材料股份有限公司 一种光刻胶组合物及其应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1375461A (enExample) * 1972-05-05 1974-11-27
JPS5241050B2 (enExample) * 1974-03-27 1977-10-15
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
JPS60164740A (ja) * 1984-02-06 1985-08-27 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS60176034A (ja) * 1984-02-23 1985-09-10 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPH0654384B2 (ja) * 1985-08-09 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
JPH0650396B2 (ja) * 1985-08-09 1994-06-29 東京応化工業株式会社 ポジ型ホトレジスト組成物
JPS62163055A (ja) * 1986-01-14 1987-07-18 Mitsubishi Chem Ind Ltd ポジ型感光性平版印刷版

Also Published As

Publication number Publication date
JP2693472B2 (ja) 1997-12-24
KR890015070A (ko) 1989-10-28
JPH02867A (ja) 1990-01-05
KR910004849B1 (ko) 1991-07-13
US4988601A (en) 1991-01-29
DE3839714A1 (de) 1989-06-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee