DE3816002C2 - - Google Patents
Info
- Publication number
- DE3816002C2 DE3816002C2 DE3816002A DE3816002A DE3816002C2 DE 3816002 C2 DE3816002 C2 DE 3816002C2 DE 3816002 A DE3816002 A DE 3816002A DE 3816002 A DE3816002 A DE 3816002A DE 3816002 C2 DE3816002 C2 DE 3816002C2
- Authority
- DE
- Germany
- Prior art keywords
- region
- segments
- effect transistor
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 56
- 230000009467 reduction Effects 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000003071 parasitic effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 23
- 230000015556 catabolic process Effects 0.000 description 10
- 238000002513 implantation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/109—Reduced surface field [RESURF] PN junction structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/054,627 US4866495A (en) | 1987-05-27 | 1987-05-27 | High power MOSFET and integrated control circuit therefor for high-side switch application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3816002A1 DE3816002A1 (de) | 1988-12-08 |
| DE3816002C2 true DE3816002C2 (en, 2012) | 1990-02-15 |
Family
ID=21992411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3816002A Granted DE3816002A1 (de) | 1987-05-27 | 1988-05-10 | Hochleistungs-mos-feldeffekttransistor sowie integrierte steuerschaltung hierfuer |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4866495A (en, 2012) |
| JP (1) | JP2681192B2 (en, 2012) |
| DE (1) | DE3816002A1 (en, 2012) |
| IT (1) | IT1217194B (en, 2012) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
| US4990977A (en) * | 1988-03-29 | 1991-02-05 | Xerox Corporation | High current thin film transistor |
| US4999684A (en) * | 1988-05-06 | 1991-03-12 | General Electric Company | Symmetrical blocking high voltage breakdown semiconducotr device |
| US5184272A (en) * | 1989-03-31 | 1993-02-02 | Hitachi, Ltd. | High-side switch with overcurrent protecting circuit |
| US5034790A (en) * | 1989-05-23 | 1991-07-23 | U.S. Philips Corp. | MOS transistor with semi-insulating field plate and surface-adjoining top layer |
| JPH03180074A (ja) * | 1989-12-08 | 1991-08-06 | Fujitsu Ltd | 半導体装置 |
| US5005061A (en) * | 1990-02-05 | 1991-04-02 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
| GB2241827B (en) * | 1990-02-23 | 1994-01-26 | Matsushita Electric Works Ltd | Method for manufacturing optically triggered lateral thyristor |
| JP2597412B2 (ja) * | 1990-03-20 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| FR2695253B1 (fr) * | 1990-05-09 | 1997-09-19 | Int Rectifier Corp | Dispositif a transistor de puissance ayant une region a concentration accrue ultra-profonde. |
| US5537074A (en) * | 1993-08-24 | 1996-07-16 | Iversen; Arthur H. | Power semiconductor packaging |
| USRE35807E (en) * | 1991-04-16 | 1998-05-26 | Iversen Arthur H | Power semiconductor packaging |
| US5266515A (en) * | 1992-03-02 | 1993-11-30 | Motorola, Inc. | Fabricating dual gate thin film transistors |
| JP3158738B2 (ja) * | 1992-08-17 | 2001-04-23 | 富士電機株式会社 | 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路 |
| US5282107A (en) * | 1992-09-01 | 1994-01-25 | Power Integrations, Inc. | Power MOSFET safe operating area current limiting device |
| EP0587968B1 (en) * | 1992-09-18 | 1996-01-03 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Monolithic integrated bridge transistor circuit and corresponding manufacturing process |
| EP0610599A1 (en) * | 1993-01-04 | 1994-08-17 | Texas Instruments Incorporated | High voltage transistor with drift region |
| JP3203858B2 (ja) * | 1993-02-15 | 2001-08-27 | 富士電機株式会社 | 高耐圧ｍｉｓ電界効果トランジスタ |
| EP0623962A1 (en) * | 1993-05-05 | 1994-11-09 | Texas Instruments Deutschland Gmbh | Gate electrode of power MOS field effect transistor |
| DE4336054A1 (de) * | 1993-10-22 | 1995-04-27 | Bosch Gmbh Robert | Monolithisch integriertes p-Kanal-Hochspannungs-Bauelement |
| DE69505348T2 (de) * | 1995-02-21 | 1999-03-11 | St Microelectronics Srl | Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung |
| DE19536753C1 (de) * | 1995-10-02 | 1997-02-20 | El Mos Elektronik In Mos Techn | MOS-Transistor mit hoher Ausgangsspannungsfestigkeit |
| DE19701189B4 (de) * | 1996-01-18 | 2005-06-30 | International Rectifier Corp., El Segundo | Halbleiterbauteil |
| US5841166A (en) * | 1996-09-10 | 1998-11-24 | Spectrian, Inc. | Lateral DMOS transistor for RF/microwave applications |
| EP0845813A1 (en) * | 1996-12-02 | 1998-06-03 | Zetex Plc | Insulated gate bipolar transistor |
| DE19725091B4 (de) * | 1997-06-13 | 2004-09-02 | Robert Bosch Gmbh | Laterales Transistorbauelement und Verfahren zu seiner Herstellung |
| JP3308505B2 (ja) * | 1999-04-19 | 2002-07-29 | セイコーインスツルメンツ株式会社 | 半導体装置 |
| US6313482B1 (en) | 1999-05-17 | 2001-11-06 | North Carolina State University | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein |
| JP2001015741A (ja) | 1999-06-30 | 2001-01-19 | Toshiba Corp | 電界効果トランジスタ |
| KR100699552B1 (ko) * | 2000-02-10 | 2007-03-26 | 인터내쇼널 렉티파이어 코포레이션 | 단일면 상에 돌출 접촉부를 갖는 수직 전도성의 플립칩디바이스 |
| US6930473B2 (en) | 2001-08-23 | 2005-08-16 | Fairchild Semiconductor Corporation | Method and circuit for reducing losses in DC-DC converters |
| US6529034B1 (en) * | 2001-11-07 | 2003-03-04 | International Rectifier Corporation | Integrated series schottky and FET to allow negative drain voltage |
| JPWO2003092078A1 (ja) * | 2002-04-25 | 2005-09-02 | サンケン電気株式会社 | 半導体素子及びその製造方法 |
| US7173308B2 (en) * | 2002-10-25 | 2007-02-06 | Shindengen Electric Manufacturing Co., Ltd. | Lateral short-channel DMOS, method for manufacturing same and semiconductor device |
| WO2005029590A1 (ja) * | 2003-09-18 | 2005-03-31 | Shindengen Electric Manufacturing Co., Ltd. | 横型短チャネルｄｍｏｓ及びその製造方法並びに半導体装置 |
| JP4091038B2 (ja) * | 2003-11-19 | 2008-05-28 | 松下電器産業株式会社 | プラズマディスプレイのサステインドライバ、及びその制御回路 |
| US7205629B2 (en) * | 2004-06-03 | 2007-04-17 | Widebandgap Llc | Lateral super junction field effect transistor |
| US7061778B2 (en) * | 2004-06-07 | 2006-06-13 | Power Integrations, Inc. | Method and apparatus for extending the operating range of a flyforward converter |
| US20060163658A1 (en) * | 2005-01-21 | 2006-07-27 | Anderson Samuel J | Monolithic MOSFET and schottky diode for mobile phone boost converter |
| JP4863665B2 (ja) * | 2005-07-15 | 2012-01-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US7888768B2 (en) * | 2006-01-09 | 2011-02-15 | Fairchild Korea Semiconductor, Ltd. | Power integrated circuit device having embedded high-side power switch |
| US8183892B2 (en) | 2009-06-05 | 2012-05-22 | Fairchild Semiconductor Corporation | Monolithic low impedance dual gate current sense MOSFET |
| US8618627B2 (en) | 2010-06-24 | 2013-12-31 | Fairchild Semiconductor Corporation | Shielded level shift transistor |
| CA2910081A1 (en) | 2013-06-18 | 2014-12-24 | Enable Injections, Llc | Vial transfer and injection apparatus and method |
| CN119584588A (zh) * | 2025-02-07 | 2025-03-07 | 山东大学 | 一种碳化硅超结平面栅横向mos器件及其制造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4152714A (en) * | 1978-01-16 | 1979-05-01 | Honeywell Inc. | Semiconductor apparatus |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| NL186665C (nl) * | 1980-03-10 | 1992-01-16 | Philips Nv | Halfgeleiderinrichting. |
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
| US4742380A (en) * | 1982-02-09 | 1988-05-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Switch utilizing solid-state relay |
| US4626879A (en) * | 1982-12-21 | 1986-12-02 | North American Philips Corporation | Lateral double-diffused MOS transistor devices suitable for source-follower applications |
| EP0115098B1 (en) * | 1982-12-27 | 1987-03-18 | Koninklijke Philips Electronics N.V. | Lateral dmos transistor device having an injector region |
| US4639761A (en) * | 1983-12-16 | 1987-01-27 | North American Philips Corporation | Combined bipolar-field effect transistor resurf devices |
| FR2571178B1 (fr) * | 1984-09-28 | 1986-11-21 | Thomson Csf | Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication |
| US4593458A (en) * | 1984-11-02 | 1986-06-10 | General Electric Company | Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices |
| US4609929A (en) * | 1984-12-21 | 1986-09-02 | North American Philips Corporation | Conductivity-enhanced combined lateral MOS/bipolar transistor |
-
1987
- 1987-05-27 US US07/054,627 patent/US4866495A/en not_active Expired - Lifetime
-
1988
- 1988-04-26 IT IT20326/88A patent/IT1217194B/it active
- 1988-05-10 DE DE3816002A patent/DE3816002A1/de active Granted
- 1988-05-27 JP JP63130045A patent/JP2681192B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4866495A (en) | 1989-09-12 |
| JP2681192B2 (ja) | 1997-11-26 |
| IT1217194B (it) | 1990-03-14 |
| IT8820326A0 (it) | 1988-04-26 |
| DE3816002A1 (de) | 1988-12-08 |
| JPS63310175A (ja) | 1988-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |