IT1217194B - Mosfet di alta potenza e circuito integrato di controllo per lo stesso,per arrlicazioni nella commutazione lato alta tensione - Google Patents

Mosfet di alta potenza e circuito integrato di controllo per lo stesso,per arrlicazioni nella commutazione lato alta tensione

Info

Publication number
IT1217194B
IT1217194B IT20326/88A IT2032688A IT1217194B IT 1217194 B IT1217194 B IT 1217194B IT 20326/88 A IT20326/88 A IT 20326/88A IT 2032688 A IT2032688 A IT 2032688A IT 1217194 B IT1217194 B IT 1217194B
Authority
IT
Italy
Prior art keywords
switching
change
control circuit
same
voltage side
Prior art date
Application number
IT20326/88A
Other languages
English (en)
Italian (it)
Other versions
IT8820326A0 (it
Inventor
Daniel M Kinzer
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of IT8820326A0 publication Critical patent/IT8820326A0/it
Application granted granted Critical
Publication of IT1217194B publication Critical patent/IT1217194B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
IT20326/88A 1987-05-27 1988-04-26 Mosfet di alta potenza e circuito integrato di controllo per lo stesso,per arrlicazioni nella commutazione lato alta tensione IT1217194B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/054,627 US4866495A (en) 1987-05-27 1987-05-27 High power MOSFET and integrated control circuit therefor for high-side switch application

Publications (2)

Publication Number Publication Date
IT8820326A0 IT8820326A0 (it) 1988-04-26
IT1217194B true IT1217194B (it) 1990-03-14

Family

ID=21992411

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20326/88A IT1217194B (it) 1987-05-27 1988-04-26 Mosfet di alta potenza e circuito integrato di controllo per lo stesso,per arrlicazioni nella commutazione lato alta tensione

Country Status (4)

Country Link
US (1) US4866495A (en, 2012)
JP (1) JP2681192B2 (en, 2012)
DE (1) DE3816002A1 (en, 2012)
IT (1) IT1217194B (en, 2012)

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US5266515A (en) * 1992-03-02 1993-11-30 Motorola, Inc. Fabricating dual gate thin film transistors
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US5282107A (en) * 1992-09-01 1994-01-25 Power Integrations, Inc. Power MOSFET safe operating area current limiting device
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EP0610599A1 (en) * 1993-01-04 1994-08-17 Texas Instruments Incorporated High voltage transistor with drift region
JP3203858B2 (ja) * 1993-02-15 2001-08-27 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタ
EP0623962A1 (en) * 1993-05-05 1994-11-09 Texas Instruments Deutschland Gmbh Gate electrode of power MOS field effect transistor
DE4336054A1 (de) * 1993-10-22 1995-04-27 Bosch Gmbh Robert Monolithisch integriertes p-Kanal-Hochspannungs-Bauelement
DE69505348T2 (de) * 1995-02-21 1999-03-11 St Microelectronics Srl Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung
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JP2001015741A (ja) 1999-06-30 2001-01-19 Toshiba Corp 電界効果トランジスタ
KR100699552B1 (ko) * 2000-02-10 2007-03-26 인터내쇼널 렉티파이어 코포레이션 단일면 상에 돌출 접촉부를 갖는 수직 전도성의 플립칩디바이스
US6930473B2 (en) 2001-08-23 2005-08-16 Fairchild Semiconductor Corporation Method and circuit for reducing losses in DC-DC converters
US6529034B1 (en) * 2001-11-07 2003-03-04 International Rectifier Corporation Integrated series schottky and FET to allow negative drain voltage
JPWO2003092078A1 (ja) * 2002-04-25 2005-09-02 サンケン電気株式会社 半導体素子及びその製造方法
US7173308B2 (en) * 2002-10-25 2007-02-06 Shindengen Electric Manufacturing Co., Ltd. Lateral short-channel DMOS, method for manufacturing same and semiconductor device
WO2005029590A1 (ja) * 2003-09-18 2005-03-31 Shindengen Electric Manufacturing Co., Ltd. 横型短チャネルｄｍｏｓ及びその製造方法並びに半導体装置
JP4091038B2 (ja) * 2003-11-19 2008-05-28 松下電器産業株式会社 プラズマディスプレイのサステインドライバ、及びその制御回路
US7205629B2 (en) * 2004-06-03 2007-04-17 Widebandgap Llc Lateral super junction field effect transistor
US7061778B2 (en) * 2004-06-07 2006-06-13 Power Integrations, Inc. Method and apparatus for extending the operating range of a flyforward converter
US20060163658A1 (en) * 2005-01-21 2006-07-27 Anderson Samuel J Monolithic MOSFET and schottky diode for mobile phone boost converter
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Also Published As

Publication number Publication date
US4866495A (en) 1989-09-12
JP2681192B2 (ja) 1997-11-26
DE3816002C2 (en, 2012) 1990-02-15
IT8820326A0 (it) 1988-04-26
DE3816002A1 (de) 1988-12-08
JPS63310175A (ja) 1988-12-19

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970423