DE3784997D1 - Senkrechter leistungstransistor des dmos-typs mit integriertem operationszustandsensor. - Google Patents

Senkrechter leistungstransistor des dmos-typs mit integriertem operationszustandsensor.

Info

Publication number
DE3784997D1
DE3784997D1 DE8787114899T DE3784997T DE3784997D1 DE 3784997 D1 DE3784997 D1 DE 3784997D1 DE 8787114899 T DE8787114899 T DE 8787114899T DE 3784997 T DE3784997 T DE 3784997T DE 3784997 D1 DE3784997 D1 DE 3784997D1
Authority
DE
Germany
Prior art keywords
power transistor
vertical power
integrated operational
operational sensor
dmos type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787114899T
Other languages
English (en)
Other versions
DE3784997T2 (de
Inventor
Richard A Blanchard
David Cooper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Application granted granted Critical
Publication of DE3784997D1 publication Critical patent/DE3784997D1/de
Publication of DE3784997T2 publication Critical patent/DE3784997T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
DE19873784997 1986-11-12 1987-10-13 Senkrechter leistungstransistor des dmos-typs mit integriertem operationszustandsensor. Expired - Lifetime DE3784997T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92996186A 1986-11-12 1986-11-12

Publications (2)

Publication Number Publication Date
DE3784997D1 true DE3784997D1 (de) 1993-04-29
DE3784997T2 DE3784997T2 (de) 1993-07-22

Family

ID=25458747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873784997 Expired - Lifetime DE3784997T2 (de) 1986-11-12 1987-10-13 Senkrechter leistungstransistor des dmos-typs mit integriertem operationszustandsensor.

Country Status (3)

Country Link
EP (1) EP0267447B1 (de)
JP (1) JP2552880B2 (de)
DE (1) DE3784997T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2698645B2 (ja) * 1988-05-25 1998-01-19 株式会社東芝 Ｍｏｓｆｅｔ
US4980740A (en) * 1989-03-27 1990-12-25 General Electric Company MOS-pilot structure for an insulated gate transistor
GB9206058D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd A semiconductor switch and a temperature sensing circuit for such a switch
GB9207849D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor device
DE4244272A1 (de) * 1992-12-28 1994-06-30 Daimler Benz Ag Feldeffektgesteuertes Halbleiterbauelement
US8310006B2 (en) * 2009-09-21 2012-11-13 Maxpower Semiconductor, Inc. Devices, structures, and methods using self-aligned resistive source extensions
CN102684485B (zh) * 2011-03-09 2015-01-21 无锡维赛半导体有限公司 垂直互补场效应管
JP7033049B2 (ja) * 2018-11-16 2022-03-09 株式会社 日立パワーデバイス 半導体装置およびそれを用いた電力変換装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240017B2 (de) * 1972-10-16 1977-10-08
JPS54112179A (en) * 1978-02-23 1979-09-01 Sony Corp Semiconductor device
JPS55146954A (en) * 1979-05-02 1980-11-15 Nec Corp Protective circuit for protecting semiconductor device against thermal breakage
JPS57139963A (en) * 1981-02-24 1982-08-30 Matsushita Electronics Corp Semiconductor device
JPS57173767A (en) * 1981-04-20 1982-10-26 Sony Corp Heat resistance measurement for mos-fet element
JPS5884461A (ja) * 1981-11-13 1983-05-20 Hitachi Ltd 絶縁ゲ−ト型半導体装置
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
DE3322669C2 (de) * 1982-07-08 1986-04-24 General Electric Co., Schenectady, N.Y. Verfahren zum Herstellen einer Halbleitervorrichtung mit isolierten Gateelektroden

Also Published As

Publication number Publication date
JP2552880B2 (ja) 1996-11-13
JPS63129671A (ja) 1988-06-02
EP0267447A3 (en) 1990-04-25
EP0267447B1 (de) 1993-03-24
DE3784997T2 (de) 1993-07-22
EP0267447A2 (de) 1988-05-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition