JPS55146954A - Protective circuit for protecting semiconductor device against thermal breakage - Google Patents
Protective circuit for protecting semiconductor device against thermal breakageInfo
- Publication number
- JPS55146954A JPS55146954A JP5464479A JP5464479A JPS55146954A JP S55146954 A JPS55146954 A JP S55146954A JP 5464479 A JP5464479 A JP 5464479A JP 5464479 A JP5464479 A JP 5464479A JP S55146954 A JPS55146954 A JP S55146954A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- transistor
- semiconductor device
- against thermal
- temperature sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
PURPOSE:To protect an electronic circuits incorporating semiconductor devices against thermal breakage attributable to overload, by providing a protection circuit wherein a temperature sensing diode is mounted in the same chip of the semiconductor device and connected to a temperature sensing circuit. CONSTITUTION:In a semiconductor device 1 having a transistor 1' formed therein, a temperature sensing diode 4 is formed in the vicinity of the junction of the transistor 1'. The diode 4 is connected to a protection circuit which includes a Zener diode 5, voltage converter 2, power-cut-off transistor 3 and a predetermined resistance. A bias voltage is applied to the diode 4. If the temperature at the juncture is maintained at normal level, the diode 4 exhibit a linear forward voltage characteristic. However, when the temperature at the juncture is elevated to 140 deg.C or so, the voltage characteristic is changed to actuate the transistor 3, thereby to open the circuit including the transistor 1' without delay.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5464479A JPS55146954A (en) | 1979-05-02 | 1979-05-02 | Protective circuit for protecting semiconductor device against thermal breakage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5464479A JPS55146954A (en) | 1979-05-02 | 1979-05-02 | Protective circuit for protecting semiconductor device against thermal breakage |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55146954A true JPS55146954A (en) | 1980-11-15 |
Family
ID=12976476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5464479A Pending JPS55146954A (en) | 1979-05-02 | 1979-05-02 | Protective circuit for protecting semiconductor device against thermal breakage |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55146954A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61149844U (en) * | 1985-03-11 | 1986-09-16 | ||
EP0267447A2 (en) * | 1986-11-12 | 1988-05-18 | SILICONIX Incorporated | A vertical DMOS power transistor with an integral operating condition sensor |
JPH02120633A (en) * | 1988-10-31 | 1990-05-08 | Nec Corp | Heat detection circuit |
WO2007101446A2 (en) * | 2006-03-09 | 2007-09-13 | Linak A/S | Electro-mechanical actuator system, for instance for adjustable furniture |
-
1979
- 1979-05-02 JP JP5464479A patent/JPS55146954A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61149844U (en) * | 1985-03-11 | 1986-09-16 | ||
EP0267447A2 (en) * | 1986-11-12 | 1988-05-18 | SILICONIX Incorporated | A vertical DMOS power transistor with an integral operating condition sensor |
JPH02120633A (en) * | 1988-10-31 | 1990-05-08 | Nec Corp | Heat detection circuit |
WO2007101446A2 (en) * | 2006-03-09 | 2007-09-13 | Linak A/S | Electro-mechanical actuator system, for instance for adjustable furniture |
WO2007101446A3 (en) * | 2006-03-09 | 2007-12-06 | Linak As | Electro-mechanical actuator system, for instance for adjustable furniture |
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