DE3784298D1 - Halbleiterspeicher. - Google Patents

Halbleiterspeicher.

Info

Publication number
DE3784298D1
DE3784298D1 DE8787113251T DE3784298T DE3784298D1 DE 3784298 D1 DE3784298 D1 DE 3784298D1 DE 8787113251 T DE8787113251 T DE 8787113251T DE 3784298 T DE3784298 T DE 3784298T DE 3784298 D1 DE3784298 D1 DE 3784298D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787113251T
Other languages
English (en)
Other versions
DE3784298T2 (de
Inventor
Yukihiro C O Patent Divi Saeki
Toshimasa C O Patent Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61231721A external-priority patent/JPS6386195A/ja
Priority claimed from JP61231803A external-priority patent/JPS6386196A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3784298D1 publication Critical patent/DE3784298D1/de
Application granted granted Critical
Publication of DE3784298T2 publication Critical patent/DE3784298T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE8787113251T 1986-09-30 1987-09-10 Halbleiterspeicher. Expired - Fee Related DE3784298T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61231721A JPS6386195A (ja) 1986-09-30 1986-09-30 半導体記憶装置
JP61231803A JPS6386196A (ja) 1986-09-30 1986-09-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3784298D1 true DE3784298D1 (de) 1993-04-01
DE3784298T2 DE3784298T2 (de) 1993-07-22

Family

ID=26530050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787113251T Expired - Fee Related DE3784298T2 (de) 1986-09-30 1987-09-10 Halbleiterspeicher.

Country Status (3)

Country Link
US (2) US5050124A (de)
EP (1) EP0263318B1 (de)
DE (1) DE3784298T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175704A (en) * 1987-07-29 1992-12-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
EP0926686A1 (de) * 1997-12-23 1999-06-30 STMicroelectronics S.r.l. Nichtflüchtiger Seriell-Flash-, EPROM-, EEPROM-, und Flash-EEPROM-Speicher in AMG-Konfiguration
JP4663094B2 (ja) 2000-10-13 2011-03-30 株式会社半導体エネルギー研究所 半導体装置
JP2006164447A (ja) * 2004-12-09 2006-06-22 Toshiba Corp 半導体記憶装置
ITTO20080647A1 (it) * 2008-08-29 2010-02-28 St Microelectronics Srl Decodificatore di colonna per dispositivi di memoria non volatili, in particolare del tipo a cambiamento di fase
US9007822B2 (en) * 2012-09-14 2015-04-14 Micron Technology, Inc. Complementary decoding for non-volatile memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387444A (en) * 1980-07-07 1983-06-07 Hughes Aircraft Company Non-volatile semiconductor memory cells
DE3177270D1 (de) * 1980-10-15 1992-02-27 Toshiba Kawasaki Kk Halbleiterspeicher mit datenprogrammierzeit.
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
JPS6025269A (ja) * 1983-07-21 1985-02-08 Hitachi Ltd 半導体記憶素子
GB2160046B (en) * 1984-04-20 1987-12-23 Hitachi Ltd Semiconductor memory device
JPS6197976A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd 半導体集積回路装置
JPS61151898A (ja) * 1984-12-26 1986-07-10 Fujitsu Ltd 半導体記憶装置におけるワ−ド線ドライバ回路
JPH0746515B2 (ja) * 1984-12-28 1995-05-17 日本電気株式会社 デコ−ダ回路
JPH0770230B2 (ja) * 1985-04-18 1995-07-31 日本電気株式会社 半導体メモリ
US4663740A (en) * 1985-07-01 1987-05-05 Silicon Macrosystems Incorporated High speed eprom cell and array
US4829203A (en) * 1988-04-20 1989-05-09 Texas Instruments Incorporated Integrated programmable bit circuit with minimal power requirement

Also Published As

Publication number Publication date
US5050124A (en) 1991-09-17
EP0263318B1 (de) 1993-02-24
EP0263318A3 (en) 1990-12-12
US4954991A (en) 1990-09-04
EP0263318A2 (de) 1988-04-13
DE3784298T2 (de) 1993-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee