DE3783927D1 - Schaltkreis zum detektieren hoher spannungen. - Google Patents

Schaltkreis zum detektieren hoher spannungen.

Info

Publication number
DE3783927D1
DE3783927D1 DE8787302223T DE3783927T DE3783927D1 DE 3783927 D1 DE3783927 D1 DE 3783927D1 DE 8787302223 T DE8787302223 T DE 8787302223T DE 3783927 T DE3783927 T DE 3783927T DE 3783927 D1 DE3783927 D1 DE 3783927D1
Authority
DE
Germany
Prior art keywords
circuit
high voltages
detect high
detect
voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787302223T
Other languages
English (en)
Other versions
DE3783927T2 (de
Inventor
Hiromi Kawashima
Atsushi Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3783927D1 publication Critical patent/DE3783927D1/de
Application granted granted Critical
Publication of DE3783927T2 publication Critical patent/DE3783927T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31701—Arrangements for setting the Unit Under Test [UUT] in a test mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
  • Dram (AREA)
DE8787302223T 1986-03-19 1987-03-16 Schaltkreis zum detektieren hoher spannungen. Expired - Fee Related DE3783927T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61059468A JPS62217714A (ja) 1986-03-19 1986-03-19 高電圧検出回路

Publications (2)

Publication Number Publication Date
DE3783927D1 true DE3783927D1 (de) 1993-03-18
DE3783927T2 DE3783927T2 (de) 1993-06-03

Family

ID=13114169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787302223T Expired - Fee Related DE3783927T2 (de) 1986-03-19 1987-03-16 Schaltkreis zum detektieren hoher spannungen.

Country Status (5)

Country Link
US (1) US4812680A (de)
EP (1) EP0238283B1 (de)
JP (1) JPS62217714A (de)
KR (1) KR900003068B1 (de)
DE (1) DE3783927T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083045A (en) * 1987-02-25 1992-01-21 Samsung Electronics Co., Ltd. High voltage follower and sensing circuit
US5510745A (en) * 1987-07-29 1996-04-23 Fujitsu Limited High-speed electronic circuit having a cascode configuration
JPH0777079B2 (ja) * 1987-07-31 1995-08-16 株式会社東芝 不揮発性半導体記憶装置
JPS6455857A (en) * 1987-08-26 1989-03-02 Nec Corp Semiconductor integrated device
JPH0695545B2 (ja) * 1988-01-07 1994-11-24 株式会社東芝 半導体集積回路
US5208488A (en) * 1989-03-03 1993-05-04 Kabushiki Kaisha Toshiba Potential detecting circuit
US5019772A (en) * 1989-05-23 1991-05-28 International Business Machines Corporation Test selection techniques
US5149987A (en) * 1991-08-19 1992-09-22 Vlsi Technology, Inc. Provision of circuit reset without a dedicated I/O pin
US5278458A (en) * 1991-12-13 1994-01-11 Texas Instruments Incorporated Threshold/voltage detection circuit
JP3217498B2 (ja) * 1992-10-29 2001-10-09 富士通株式会社 半導体集積回路装置
US5394026A (en) * 1993-02-02 1995-02-28 Motorola Inc. Substrate bias generating circuit
JPH0712902A (ja) * 1993-06-17 1995-01-17 Fujitsu Ltd 半導体集積回路
WO1995009483A1 (en) * 1993-09-30 1995-04-06 Macronix International Co., Ltd. Improved supply voltage detection circuit
US5420798A (en) * 1993-09-30 1995-05-30 Macronix International Co., Ltd. Supply voltage detection circuit
US5397946A (en) * 1993-10-26 1995-03-14 Texas Instruments Incorporated High-voltage sensor for integrated circuits
JP3609185B2 (ja) * 1996-01-30 2005-01-12 沖電気工業株式会社 信号発生回路及びこれを用いたテストモード設定方法
JP3806011B2 (ja) * 2001-10-05 2006-08-09 セイコーインスツル株式会社 電圧検出回路
JP2003168300A (ja) * 2001-11-29 2003-06-13 Mitsubishi Electric Corp 半導体装置
JP2006112906A (ja) * 2004-10-14 2006-04-27 Sanyo Electric Co Ltd 電圧検出回路
JP5366511B2 (ja) * 2008-11-14 2013-12-11 株式会社沖データ 駆動回路、光プリントヘッド及び画像形成装置
US8154320B1 (en) * 2009-03-24 2012-04-10 Lockheed Martin Corporation Voltage level shifter
US8570077B2 (en) * 2010-12-17 2013-10-29 Qualcomm Incorporated Methods and implementation of low-power power-on control circuits
US10094859B1 (en) * 2017-07-19 2018-10-09 Invecas, Inc. Voltage detector
CN111521861B (zh) * 2020-04-10 2022-07-22 南开大学深圳研究院 一种用于过压保护的高电压检测电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1513930A (en) * 1974-12-20 1978-06-14 Seiko Instr & Electronics Battery voltage detecting device
JPS55149871A (en) * 1978-07-31 1980-11-21 Fujitsu Ltd Line voltage detector
US4301380A (en) * 1979-05-01 1981-11-17 Motorola, Inc. Voltage detector
JPS5719676A (en) * 1981-06-01 1982-02-01 Seiko Epson Corp Voltage detecting circuit
JPS58151124A (ja) * 1982-03-04 1983-09-08 Ricoh Co Ltd レベル変換回路
JPS58190775A (ja) * 1982-04-30 1983-11-07 Fujitsu Ltd 電源電圧検出回路
JPS60124124A (ja) * 1983-12-08 1985-07-03 Nec Corp 入力回路

Also Published As

Publication number Publication date
EP0238283A3 (en) 1988-07-27
EP0238283B1 (de) 1993-02-03
US4812680A (en) 1989-03-14
JPS62217714A (ja) 1987-09-25
DE3783927T2 (de) 1993-06-03
KR900003068B1 (ko) 1990-05-07
JPH0342015B2 (de) 1991-06-25
KR870009238A (ko) 1987-10-24
EP0238283A2 (de) 1987-09-23

Similar Documents

Publication Publication Date Title
DE3783927D1 (de) Schaltkreis zum detektieren hoher spannungen.
DE3580476D1 (de) Wellenform prozessor hoher aufloesung.
DK590187A (da) Trykt-kredsloebsantenne
DE3750885D1 (de) Koordinaten-Messung.
DE3789938D1 (de) Elektrische Anordnung.
DE3650611D1 (de) Schaltung zum Verstärken von Signalen
DE3775625D1 (de) Gedruckte leiterplatte.
DK638687A (da) Baereboelgereproducerende kredsloeb
DE3682119D1 (de) Komplementaere ic-struktur mit hoher steilheit.
DE3574502D1 (de) Schaltung zum nachweis des niveaus einer eingangsspannung.
DE3787181D1 (de) Pegelumwandlungsschaltung.
NO874390L (no) Piezoelelektriske sensorelementer.
DE3788971D1 (de) Spannungsvergleichsschaltung.
DE3787395D1 (de) Parallele Berechnungsschaltung.
DE3780879D1 (de) Elektrodenanordnung.
DE3686886D1 (de) Kalorimeter hoher genauigkeit.
DE3783716D1 (de) Schaltung zum nachweis von unterbrochenen leitern.
DE3577967D1 (de) Modul-schaltkreis.
DE3689023D1 (de) Wellenformverarbeitungsschaltung.
KR880701721A (ko) 면역조절제로서의 7-디아자구아닌
DK437387D0 (da) Maalekredsloeb
DE3784192D1 (de) Schaltungssubstrat.
DE3770928D1 (de) Elektrode zum elektroraffinieren.
IT8619722A0 (it) Disposizione circuitale.
DE3787037D1 (de) Halteschaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee