DE3781780T2 - Vorrichtung und verfahren zum abschneiden von diamant. - Google Patents

Vorrichtung und verfahren zum abschneiden von diamant.

Info

Publication number
DE3781780T2
DE3781780T2 DE8787116337T DE3781780T DE3781780T2 DE 3781780 T2 DE3781780 T2 DE 3781780T2 DE 8787116337 T DE8787116337 T DE 8787116337T DE 3781780 T DE3781780 T DE 3781780T DE 3781780 T2 DE3781780 T2 DE 3781780T2
Authority
DE
Germany
Prior art keywords
substrate
gas
diamond
metal
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787116337T
Other languages
German (de)
English (en)
Other versions
DE3781780D1 (de
Inventor
Thomas Richard Anthony
Robert Charles Devries
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE3781780D1 publication Critical patent/DE3781780D1/de
Application granted granted Critical
Publication of DE3781780T2 publication Critical patent/DE3781780T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Fibers (AREA)
  • Lubricants (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Vapour Deposition (AREA)
DE8787116337T 1986-12-22 1987-11-05 Vorrichtung und verfahren zum abschneiden von diamant. Expired - Fee Related DE3781780T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94472986A 1986-12-22 1986-12-22

Publications (2)

Publication Number Publication Date
DE3781780D1 DE3781780D1 (de) 1992-10-22
DE3781780T2 true DE3781780T2 (de) 1993-01-28

Family

ID=25481962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787116337T Expired - Fee Related DE3781780T2 (de) 1986-12-22 1987-11-05 Vorrichtung und verfahren zum abschneiden von diamant.

Country Status (9)

Country Link
EP (1) EP0272418B1 (OSRAM)
JP (1) JPS63182297A (OSRAM)
KR (1) KR960000063B1 (OSRAM)
AT (1) ATE80672T1 (OSRAM)
AU (1) AU598611B2 (OSRAM)
BR (1) BR8706982A (OSRAM)
DE (1) DE3781780T2 (OSRAM)
IL (1) IL84526A (OSRAM)
ZA (1) ZA877921B (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776149B2 (ja) * 1987-10-15 1995-08-16 昭和電工株式会社 気相法によるダイヤモンド合成法
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process
WO1990005701A1 (en) * 1988-11-16 1990-05-31 Andrew Carey Good Diamond production
US5106452A (en) * 1989-06-05 1992-04-21 Semiconductor Energy Laboratory Co., Ltd. Method of depositing diamond and diamond light emitting device
DE3935865C1 (OSRAM) * 1989-10-27 1990-10-04 Philips Patentverwaltung Gmbh, 2000 Hamburg, De
GB2240114B (en) * 1990-01-18 1993-03-24 Stc Plc Film nucleation process
SE9002135D0 (sv) * 1990-06-15 1990-06-15 Sandvik Ab Improved tools for percussive and rotary crusching rock drilling provided with a diamond layer
SE9002137D0 (sv) * 1990-06-15 1990-06-15 Diamant Boart Stratabit Sa Improved tools for cutting rock drilling
SE9002136D0 (sv) * 1990-06-15 1990-06-15 Sandvik Ab Cement carbide body for rock drilling, mineral cutting and highway engineering
SE9003251D0 (sv) * 1990-10-11 1990-10-11 Diamant Boart Stratabit Sa Improved tools for rock drilling, metal cutting and wear part applications
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
US5417475A (en) * 1992-08-19 1995-05-23 Sandvik Ab Tool comprised of a holder body and a hard insert and method of using same
US5837071A (en) * 1993-11-03 1998-11-17 Sandvik Ab Diamond coated cutting tool insert and method of making same
JP3051912B2 (ja) * 1996-09-03 2000-06-12 科学技術庁無機材質研究所長 リンドープダイヤモンドの合成法
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
DE102009015545B4 (de) * 2009-03-02 2013-10-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage mit Aktivierungselement, deren Verwendung sowie Verfahren zur Abscheidung einer Beschichtung
DE102009023471B4 (de) * 2009-06-02 2012-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
RU2638220C2 (ru) 2012-11-21 2017-12-12 Нэшнл Ойлвэл Дхт, Л.П. Режущие элементы бурового долота с закрепленными резцами, содержащие твердые режущие пластины, выполненные из синтетических алмазов, сформированных химическим осаждением из паровой фазы

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58156594A (ja) * 1982-03-08 1983-09-17 Sumitomo Electric Ind Ltd 硬質被膜の製造法
JPS59232991A (ja) * 1983-06-16 1984-12-27 Sumitomo Electric Ind Ltd ダイヤモンド薄膜の製造法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
EP0230927B1 (en) * 1986-01-17 1991-03-06 Sumitomo Electric Industries Limited Diamond manufacturing
US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process

Also Published As

Publication number Publication date
DE3781780D1 (de) 1992-10-22
EP0272418A3 (en) 1989-06-07
JPH0472798B2 (OSRAM) 1992-11-19
KR960000063B1 (ko) 1996-01-03
ATE80672T1 (de) 1992-10-15
KR880007362A (ko) 1988-08-27
IL84526A (en) 1991-09-16
IL84526A0 (en) 1988-04-29
ZA877921B (en) 1988-04-21
AU598611B2 (en) 1990-06-28
EP0272418B1 (en) 1992-09-16
AU8195187A (en) 1988-06-23
JPS63182297A (ja) 1988-07-27
BR8706982A (pt) 1988-07-26
EP0272418A2 (en) 1988-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee