DE69417627T2 - Verfahren zur dampfphasendiamantsynthese - Google Patents

Verfahren zur dampfphasendiamantsynthese

Info

Publication number
DE69417627T2
DE69417627T2 DE69417627T DE69417627T DE69417627T2 DE 69417627 T2 DE69417627 T2 DE 69417627T2 DE 69417627 T DE69417627 T DE 69417627T DE 69417627 T DE69417627 T DE 69417627T DE 69417627 T2 DE69417627 T2 DE 69417627T2
Authority
DE
Germany
Prior art keywords
diamond synthesis
steam phase
phase diamond
steam
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417627T
Other languages
English (en)
Other versions
DE69417627D1 (de
Inventor
Takahiro Imai
Takashi Tsuno
Yoshiyuki Yamamoto
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69417627D1 publication Critical patent/DE69417627D1/de
Publication of DE69417627T2 publication Critical patent/DE69417627T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69417627T 1993-01-14 1994-01-13 Verfahren zur dampfphasendiamantsynthese Expired - Fee Related DE69417627T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP470493 1993-01-14
PCT/JP1994/000035 WO1994016125A1 (en) 1993-01-14 1994-01-13 Process for vapor-phase diamond synthesis

Publications (2)

Publication Number Publication Date
DE69417627D1 DE69417627D1 (de) 1999-05-12
DE69417627T2 true DE69417627T2 (de) 1999-09-09

Family

ID=11591273

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417627T Expired - Fee Related DE69417627T2 (de) 1993-01-14 1994-01-13 Verfahren zur dampfphasendiamantsynthese

Country Status (4)

Country Link
US (1) US5499601A (de)
EP (1) EP0630994B1 (de)
DE (1) DE69417627T2 (de)
WO (1) WO1994016125A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
US7520930B2 (en) * 2002-04-15 2009-04-21 Sumitomo Metal Industries, Ltd. Silicon carbide single crystal and a method for its production
GB0223321D0 (en) * 2002-10-08 2002-11-13 Element Six Ltd Heat spreader
AT7522U1 (de) * 2004-04-29 2005-04-25 Plansee Ag Wärmesenke aus borhaltigem diamant-kupfer-verbundwerkstoff
JP4744118B2 (ja) * 2004-09-30 2011-08-10 株式会社神戸製鋼所 単結晶ダイヤモンド合成用基板及び単結晶ダイヤモンド膜の製造方法
JP4461110B2 (ja) * 2006-03-14 2010-05-12 株式会社東芝 ダイヤモンドの成膜方法
TWI387417B (zh) * 2008-08-29 2013-02-21 Ind Tech Res Inst 電路板結構及其製作方法
CN101785980B (zh) * 2009-01-22 2012-09-05 宋健民 在拼图式钻石基板形成p-n结
WO2011049479A1 (en) * 2009-10-21 2011-04-28 Andrey Mikhailovich Abyzov Composite material having high thermal conductivity and process of fabricating same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4034066A (en) * 1973-11-02 1977-07-05 General Electric Company Method and high pressure reaction vessel for quality control of diamond growth on diamond seed
JPH0658891B2 (ja) * 1987-03-12 1994-08-03 住友電気工業株式会社 薄膜単結晶ダイヤモンド基板
JPH01138198A (ja) * 1987-11-26 1989-05-31 Nec Corp ダイヤモンド膜の製造方法
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films
EP0417190A1 (de) * 1988-06-03 1991-03-20 Massachusetts Institute Of Technology Siliziumdioxidfilme auf diamant
WO1992001827A1 (en) * 1988-06-03 1992-02-06 Massachusetts Institute Of Technology Oriented diamond crystals
JP2686970B2 (ja) * 1988-07-01 1997-12-08 旭ダイヤモンド工業株式会社 膜状ダイヤモンドの製造方法
JP2730145B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
JP2722724B2 (ja) * 1989-10-24 1998-03-09 富士通株式会社 ダイヤモンド膜の被覆方法
JP2662608B2 (ja) * 1990-09-21 1997-10-15 科学技術庁無機材質研究所長 ダイヤモンド単結晶膜の合成法
JPH04182391A (ja) * 1990-11-13 1992-06-29 Japan Steel Works Ltd:The ダイヤモンド板の製造方法

Also Published As

Publication number Publication date
US5499601A (en) 1996-03-19
EP0630994A4 (de) 1995-08-02
EP0630994B1 (de) 1999-04-07
WO1994016125A1 (en) 1994-07-21
EP0630994A1 (de) 1994-12-28
DE69417627D1 (de) 1999-05-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee