DE3743951C2 - - Google Patents
Info
- Publication number
- DE3743951C2 DE3743951C2 DE3743951A DE3743951A DE3743951C2 DE 3743951 C2 DE3743951 C2 DE 3743951C2 DE 3743951 A DE3743951 A DE 3743951A DE 3743951 A DE3743951 A DE 3743951A DE 3743951 C2 DE3743951 C2 DE 3743951C2
- Authority
- DE
- Germany
- Prior art keywords
- heat insulating
- cylinder
- pulling
- insulating cylinder
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 81
- 239000013078 crystal Substances 0.000 claims description 51
- 229910052799 carbon Inorganic materials 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 239000000835 fiber Substances 0.000 claims description 39
- 229910002804 graphite Inorganic materials 0.000 claims description 33
- 239000010439 graphite Substances 0.000 claims description 33
- 238000009413 insulation Methods 0.000 claims description 29
- 239000002131 composite material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002210 silicon-based material Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 6
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 5
- 239000004917 carbon fiber Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 19
- 239000012774 insulation material Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 10
- 239000006260 foam Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000003245 coal Substances 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 6
- 239000003575 carbonaceous material Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 238000002231 Czochralski process Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31559886A JPS63166793A (ja) | 1986-12-26 | 1986-12-26 | シリコン単結晶引上装置 |
| JP61315577A JP2544730B2 (ja) | 1986-12-26 | 1986-12-26 | 炭素質多孔体断熱材の製造方法 |
| JP61315599A JPH0798716B2 (ja) | 1986-12-26 | 1986-12-26 | シリコン単結晶引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3743951A1 DE3743951A1 (de) | 1988-07-07 |
| DE3743951C2 true DE3743951C2 (US08066781-20111129-C00013.png) | 1993-01-28 |
Family
ID=27339482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873743951 Granted DE3743951A1 (de) | 1986-12-26 | 1987-12-23 | Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5098675A (US08066781-20111129-C00013.png) |
| KR (1) | KR910009130B1 (US08066781-20111129-C00013.png) |
| DE (1) | DE3743951A1 (US08066781-20111129-C00013.png) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0772116B2 (ja) * | 1991-02-15 | 1995-08-02 | 信越半導体株式会社 | 単結晶引上装置 |
| JP3128795B2 (ja) * | 1995-06-09 | 2001-01-29 | 信越半導体株式会社 | チョクラルスキー法による結晶製造装置および製造方法 |
| JP3653647B2 (ja) * | 1996-05-31 | 2005-06-02 | イビデン株式会社 | シリコン単結晶引き上げ装置用の保温筒 |
| US6183553B1 (en) * | 1998-06-15 | 2001-02-06 | Memc Electronic Materials, Inc. | Process and apparatus for preparation of silicon crystals with reduced metal content |
| US20020170487A1 (en) * | 2001-05-18 | 2002-11-21 | Raanan Zehavi | Pre-coated silicon fixtures used in a high temperature process |
| US7108746B2 (en) * | 2001-05-18 | 2006-09-19 | Integrated Materials, Inc. | Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
| US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems |
| CN101715496A (zh) * | 2007-06-14 | 2010-05-26 | 长青太阳能股份有限公司 | 用于带状晶拉晶炉的可移除热控制 |
| CN101392407B (zh) * | 2008-10-07 | 2011-07-20 | 南京师范大学 | 一种圆柱空心型的大孔有序的胶体晶体的制备方法 |
| JP5392040B2 (ja) * | 2009-12-04 | 2014-01-22 | 信越半導体株式会社 | 単結晶製造装置及び単結晶製造方法 |
| KR101218852B1 (ko) * | 2010-01-05 | 2013-01-18 | 주식회사 엘지실트론 | 단결정 성장장치의 단열장치 및 이를 포함하는 단결정 성장장치 |
| TWM441676U (en) * | 2012-07-17 | 2012-11-21 | Utech Solar Corp | Anti-electric arc heating electrode assembly used in crystal growth furnace |
| US20140083349A1 (en) * | 2012-09-21 | 2014-03-27 | Max Era, Inc. | Removable thermal control for ribbon crystal pulling furnaces |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3173765A (en) * | 1955-03-18 | 1965-03-16 | Itt | Method of making crystalline silicon semiconductor material |
| US2822308A (en) * | 1955-03-29 | 1958-02-04 | Gen Electric | Semiconductor p-n junction units and method of making the same |
| US3261671A (en) * | 1963-11-29 | 1966-07-19 | Philips Corp | Device for treating semi-conductor materials by melting |
| US3495630A (en) * | 1967-03-01 | 1970-02-17 | Carborundum Co | Composite tubes |
| US3551115A (en) * | 1968-05-22 | 1970-12-29 | Ibm | Apparatus for growing single crystals |
| US3632385A (en) * | 1970-03-17 | 1972-01-04 | Atomic Energy Commission | Carbon composite structures and method for making same |
| US3953281A (en) * | 1974-06-27 | 1976-04-27 | International Business Machines Corporation | Method and system for growing monocrystalline ingots |
| US3980105A (en) * | 1974-07-10 | 1976-09-14 | Hitco | Laminated article comprising pyrolytic graphite and a composite substrate therefor |
| US4134785A (en) * | 1977-04-13 | 1979-01-16 | Western Electric Company, Inc. | Real-time analysis and control of melt-chemistry in crystal growing operations |
| US4235848A (en) * | 1978-06-15 | 1980-11-25 | Apilat Vitaly Y | Apparatus for pulling single crystal from melt on a seed |
| DE2827113C2 (de) * | 1978-06-21 | 1985-07-04 | Gosudarstvennyj naučno-issledovatel'skij i proektnyj institut redkometalličeskoj promyšlennosti GIREDMET, Moskva | Vorrichtung zum Ziehen eines Einkristalls aus einer Schmelze |
| JPS5556098A (en) * | 1978-10-17 | 1980-04-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method and apparatus for producing si single crystal rod |
| US4396824A (en) * | 1979-10-09 | 1983-08-02 | Siltec Corporation | Conduit for high temperature transfer of molten semiconductor crystalline material |
| JP2690446B2 (ja) * | 1980-03-27 | 1997-12-10 | キヤノン 株式会社 | 非晶質シリコン薄膜トランジスタの製造法 |
| JPS57112410A (en) * | 1980-12-27 | 1982-07-13 | Toho Rayon Co Ltd | Acrylonitrile fiber and its production |
| JPS5913693A (ja) * | 1982-07-15 | 1984-01-24 | Toshiba Corp | 化合物半導体単結晶育成装置 |
| JPS59102880A (ja) * | 1982-12-02 | 1984-06-14 | 東レ株式会社 | 高温耐熱性材料 |
| JPS6163593A (ja) * | 1984-09-05 | 1986-04-01 | Toshiba Corp | 化合物半導体単結晶の製造装置 |
| JPS6163592A (ja) * | 1984-09-05 | 1986-04-01 | Toshiba Corp | 化合物半導体単結晶の製造装置 |
| DE3441707C2 (de) * | 1984-11-15 | 1994-01-27 | Ringsdorff Werke Gmbh | Tiegel zum Herstellen von Kristallen und Verwendung des Tiegels |
| JPS61256993A (ja) * | 1985-05-09 | 1986-11-14 | Toyo Tanso Kk | シリコン単結晶引上げ装置用黒鉛子るつぼ及びヒ−タ− |
-
1987
- 1987-12-23 DE DE19873743951 patent/DE3743951A1/de active Granted
- 1987-12-26 KR KR1019870015146A patent/KR910009130B1/ko not_active IP Right Cessation
-
1990
- 1990-01-16 US US07/464,957 patent/US5098675A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3743951A1 (de) | 1988-07-07 |
| KR880008413A (ko) | 1988-08-31 |
| US5098675A (en) | 1992-03-24 |
| KR910009130B1 (ko) | 1991-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |