DE3743951A1 - Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben - Google Patents

Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben

Info

Publication number
DE3743951A1
DE3743951A1 DE19873743951 DE3743951A DE3743951A1 DE 3743951 A1 DE3743951 A1 DE 3743951A1 DE 19873743951 DE19873743951 DE 19873743951 DE 3743951 A DE3743951 A DE 3743951A DE 3743951 A1 DE3743951 A1 DE 3743951A1
Authority
DE
Germany
Prior art keywords
pulling
cylinder
heat insulating
crucible
single crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19873743951
Other languages
German (de)
English (en)
Other versions
DE3743951C2 (https=
Inventor
Shuitsu Matsuo
Kazuo Ito
Masayuki Saito
Yoshihisa Wada
Yukifumi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61315577A external-priority patent/JP2544730B2/ja
Priority claimed from JP61315599A external-priority patent/JPH0798716B2/ja
Priority claimed from JP31559886A external-priority patent/JPS63166793A/ja
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of DE3743951A1 publication Critical patent/DE3743951A1/de
Application granted granted Critical
Publication of DE3743951C2 publication Critical patent/DE3743951C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19873743951 1986-12-26 1987-12-23 Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben Granted DE3743951A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61315577A JP2544730B2 (ja) 1986-12-26 1986-12-26 炭素質多孔体断熱材の製造方法
JP61315599A JPH0798716B2 (ja) 1986-12-26 1986-12-26 シリコン単結晶引上装置
JP31559886A JPS63166793A (ja) 1986-12-26 1986-12-26 シリコン単結晶引上装置

Publications (2)

Publication Number Publication Date
DE3743951A1 true DE3743951A1 (de) 1988-07-07
DE3743951C2 DE3743951C2 (https=) 1993-01-28

Family

ID=27339482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873743951 Granted DE3743951A1 (de) 1986-12-26 1987-12-23 Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben

Country Status (3)

Country Link
US (1) US5098675A (https=)
KR (1) KR910009130B1 (https=)
DE (1) DE3743951A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810305A1 (en) * 1996-05-31 1997-12-03 Ibiden Co, Ltd. An apparatus for pulling silicon single crystal

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772116B2 (ja) * 1991-02-15 1995-08-02 信越半導体株式会社 単結晶引上装置
JP3128795B2 (ja) * 1995-06-09 2001-01-29 信越半導体株式会社 チョクラルスキー法による結晶製造装置および製造方法
US6183553B1 (en) * 1998-06-15 2001-02-06 Memc Electronic Materials, Inc. Process and apparatus for preparation of silicon crystals with reduced metal content
US7108746B2 (en) * 2001-05-18 2006-09-19 Integrated Materials, Inc. Silicon fixture with roughened surface supporting wafers in chemical vapor deposition
US20020170487A1 (en) * 2001-05-18 2002-11-21 Raanan Zehavi Pre-coated silicon fixtures used in a high temperature process
US8261690B2 (en) * 2006-07-14 2012-09-11 Georgia Tech Research Corporation In-situ flux measurement devices, methods, and systems
US8293007B2 (en) * 2007-06-14 2012-10-23 Max Era, Inc. Removable thermal control for ribbon crystal pulling furnaces
CN101392407B (zh) * 2008-10-07 2011-07-20 南京师范大学 一种圆柱空心型的大孔有序的胶体晶体的制备方法
JP5392040B2 (ja) * 2009-12-04 2014-01-22 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
KR101218852B1 (ko) * 2010-01-05 2013-01-18 주식회사 엘지실트론 단결정 성장장치의 단열장치 및 이를 포함하는 단결정 성장장치
TWM441676U (en) * 2012-07-17 2012-11-21 Utech Solar Corp Anti-electric arc heating electrode assembly used in crystal growth furnace
US20140083349A1 (en) * 2012-09-21 2014-03-27 Max Era, Inc. Removable thermal control for ribbon crystal pulling furnaces

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495630A (en) * 1967-03-01 1970-02-17 Carborundum Co Composite tubes
US3632385A (en) * 1970-03-17 1972-01-04 Atomic Energy Commission Carbon composite structures and method for making same
US3980105A (en) * 1974-07-10 1976-09-14 Hitco Laminated article comprising pyrolytic graphite and a composite substrate therefor
DE2827113A1 (de) * 1978-06-21 1980-01-24 Gni I Pi Redkometallitscheskoj Vorrichtung zum ausziehen eines einkristalls aus der schmelze auf einem impfkristall
DE3036178A1 (de) * 1979-10-09 1981-04-23 Siltec Corp., Menlo Park, Calif. Leitung zum ueberfuehren eines fluessigkeitsstroms aus geschmolzenem halbleitermaterial
JPS59102880A (ja) * 1982-12-02 1984-06-14 東レ株式会社 高温耐熱性材料
EP0177132A2 (en) * 1984-09-05 1986-04-09 Kabushiki Kaisha Toshiba Apparatus for manufacturing compound semiconductor single crystal
DE3441707A1 (de) * 1984-11-15 1986-05-15 Ringsdorff-Werke GmbH, 5300 Bonn Tiegel zum herstellen von kristallen und verwendung des tiegels
JPH06163592A (ja) * 1980-03-27 1994-06-10 Canon Inc 非晶質シリコン薄膜トランジスタの製造法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3551115A (en) * 1968-05-22 1970-12-29 Ibm Apparatus for growing single crystals
US3953281A (en) * 1974-06-27 1976-04-27 International Business Machines Corporation Method and system for growing monocrystalline ingots
US4134785A (en) * 1977-04-13 1979-01-16 Western Electric Company, Inc. Real-time analysis and control of melt-chemistry in crystal growing operations
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
JPS57112410A (en) * 1980-12-27 1982-07-13 Toho Rayon Co Ltd Acrylonitrile fiber and its production
JPS5913693A (ja) * 1982-07-15 1984-01-24 Toshiba Corp 化合物半導体単結晶育成装置
JPS6163592A (ja) * 1984-09-05 1986-04-01 Toshiba Corp 化合物半導体単結晶の製造装置
JPS61256993A (ja) * 1985-05-09 1986-11-14 Toyo Tanso Kk シリコン単結晶引上げ装置用黒鉛子るつぼ及びヒ−タ−

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495630A (en) * 1967-03-01 1970-02-17 Carborundum Co Composite tubes
US3632385A (en) * 1970-03-17 1972-01-04 Atomic Energy Commission Carbon composite structures and method for making same
US3980105A (en) * 1974-07-10 1976-09-14 Hitco Laminated article comprising pyrolytic graphite and a composite substrate therefor
DE2827113A1 (de) * 1978-06-21 1980-01-24 Gni I Pi Redkometallitscheskoj Vorrichtung zum ausziehen eines einkristalls aus der schmelze auf einem impfkristall
DE3036178A1 (de) * 1979-10-09 1981-04-23 Siltec Corp., Menlo Park, Calif. Leitung zum ueberfuehren eines fluessigkeitsstroms aus geschmolzenem halbleitermaterial
JPH06163592A (ja) * 1980-03-27 1994-06-10 Canon Inc 非晶質シリコン薄膜トランジスタの製造法
JPS59102880A (ja) * 1982-12-02 1984-06-14 東レ株式会社 高温耐熱性材料
EP0177132A2 (en) * 1984-09-05 1986-04-09 Kabushiki Kaisha Toshiba Apparatus for manufacturing compound semiconductor single crystal
DE3441707A1 (de) * 1984-11-15 1986-05-15 Ringsdorff-Werke GmbH, 5300 Bonn Tiegel zum herstellen von kristallen und verwendung des tiegels

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. Cryst. Growth 39, 1977, S.1-16 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810305A1 (en) * 1996-05-31 1997-12-03 Ibiden Co, Ltd. An apparatus for pulling silicon single crystal
US5954875A (en) * 1996-05-31 1999-09-21 Ibiden Co., Ltd. Apparatus for pulling silicon single crystal

Also Published As

Publication number Publication date
KR910009130B1 (ko) 1991-10-31
DE3743951C2 (https=) 1993-01-28
KR880008413A (ko) 1988-08-31
US5098675A (en) 1992-03-24

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee