DE3878990T2 - Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien. - Google Patents

Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien.

Info

Publication number
DE3878990T2
DE3878990T2 DE8888108790T DE3878990T DE3878990T2 DE 3878990 T2 DE3878990 T2 DE 3878990T2 DE 8888108790 T DE8888108790 T DE 8888108790T DE 3878990 T DE3878990 T DE 3878990T DE 3878990 T2 DE3878990 T2 DE 3878990T2
Authority
DE
Germany
Prior art keywords
semiconductor materials
growing crystals
crystals
growing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888108790T
Other languages
English (en)
Other versions
DE3878990D1 (de
Inventor
Michio Kida
Yoshiaki Arai
Kensho Sahira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13798587A external-priority patent/JPS63303894A/ja
Priority claimed from JP23988087A external-priority patent/JPS6483593A/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Application granted granted Critical
Publication of DE3878990D1 publication Critical patent/DE3878990D1/de
Publication of DE3878990T2 publication Critical patent/DE3878990T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8888108790T 1987-06-01 1988-06-01 Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien. Expired - Lifetime DE3878990T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13798587A JPS63303894A (ja) 1987-06-01 1987-06-01 シリコン単結晶育成方法
JP23988087A JPS6483593A (en) 1987-09-24 1987-09-24 Apparatus for growing semiconductor single crystal

Publications (2)

Publication Number Publication Date
DE3878990D1 DE3878990D1 (de) 1993-04-15
DE3878990T2 true DE3878990T2 (de) 1993-09-02

Family

ID=26471145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888108790T Expired - Lifetime DE3878990T2 (de) 1987-06-01 1988-06-01 Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien.

Country Status (4)

Country Link
US (2) US4936949A (de)
EP (1) EP0293865B1 (de)
CA (1) CA1305909C (de)
DE (1) DE3878990T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712668A1 (de) * 1987-04-14 1988-10-27 Hans J Scheel Verfahren und vorrichtung zur zuechtung von kristallen nach der czochralski-methode
JPH02107587A (ja) * 1988-10-13 1990-04-19 Mitsubishi Metal Corp 半導体単結晶育成装置
FI901414A0 (fi) * 1989-03-30 1990-03-21 Nippon Kokan Kk Anordning foer framstaellning av kiselenkristaller.
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置
EP0450089A4 (en) * 1989-10-16 1992-07-08 Nkk Corporation Apparatus for manufacturing silicon single crystals
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
JPH0825836B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造装置
JP3077273B2 (ja) * 1991-07-30 2000-08-14 三菱マテリアル株式会社 単結晶引上装置
US5288366A (en) * 1992-04-24 1994-02-22 Memc Electronic Materials, Inc. Method for growing multiple single crystals and apparatus for use therein
EP0625595B1 (de) * 1993-03-29 2001-09-19 Research Development Corporation Of Japan Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.
US5488924A (en) * 1993-12-06 1996-02-06 Memc Electronic Materials Hopper for use in charging semiconductor source material
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US6802999B1 (en) 2002-06-13 2004-10-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating protective coating for a crucible with the coating having channels formed therein
EP1951260A4 (de) * 2005-10-21 2009-11-11 Bezwada Biomedical Llc Funktionalisierte phenolische verbindungen und saugfähiger artikel daraus
KR101136930B1 (ko) * 2009-06-18 2012-04-20 김영관 조립 도가니를 구비한 실리콘 잉곳 제조용 도가니
CN104685113A (zh) * 2012-09-10 2015-06-03 Gtatip控股有限责任公司 连续cz方法和设备
KR101496247B1 (ko) 2012-10-10 2015-02-26 디케이아즈텍 주식회사 이형재를 구비한 사파이어 결정성장기
JP7186534B2 (ja) * 2018-07-25 2022-12-09 昭和電工株式会社 結晶成長装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
US3637439A (en) * 1968-11-13 1972-01-25 Metallurgie Hoboken Process and apparatus for pulling single crystals of germanium
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
JPS6018634B2 (ja) * 1978-09-27 1985-05-11 ソニー株式会社 結晶引上げ装置
US4246064A (en) * 1979-07-02 1981-01-20 Western Electric Company, Inc. Double crucible crystal growing process
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
JPS5847300A (ja) * 1981-09-16 1983-03-18 株式会社東芝 放射性廃棄物のセラミツクス固化法及びセラミツクス固化装置
JPS58204895A (ja) * 1982-05-25 1983-11-29 Nippon Telegr & Teleph Corp <Ntt> 結晶引上げ方法および装置
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS61163187A (ja) * 1985-01-09 1986-07-23 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法及び製造装置
JPS6270291A (ja) * 1985-09-19 1987-03-31 Toshiba Corp ＧａＡｓ単結晶の製造方法及び装置
JPS6287489A (ja) * 1985-10-12 1987-04-21 Sumitomo Electric Ind Ltd るつぼの回収方法及び装置

Also Published As

Publication number Publication date
EP0293865A1 (de) 1988-12-07
CA1305909C (en) 1992-08-04
DE3878990D1 (de) 1993-04-15
US5009862A (en) 1991-04-23
US4936949A (en) 1990-06-26
EP0293865B1 (de) 1993-03-10

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