DE3719952A1 - Einrichtung zur behandlung von wafern bei der herstellung von halbleiterelementen - Google Patents
Einrichtung zur behandlung von wafern bei der herstellung von halbleiterelementenInfo
- Publication number
- DE3719952A1 DE3719952A1 DE19873719952 DE3719952A DE3719952A1 DE 3719952 A1 DE3719952 A1 DE 3719952A1 DE 19873719952 DE19873719952 DE 19873719952 DE 3719952 A DE3719952 A DE 3719952A DE 3719952 A1 DE3719952 A1 DE 3719952A1
- Authority
- DE
- Germany
- Prior art keywords
- loading
- magazine
- unloading
- treatment
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 24
- 230000035784 germination Effects 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 11
- 239000002609 medium Substances 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 239000012869 germination medium Substances 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000036829 Device dislocation Diseases 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67769—Storage means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873719952 DE3719952A1 (de) | 1987-06-15 | 1987-06-15 | Einrichtung zur behandlung von wafern bei der herstellung von halbleiterelementen |
| JP13429088A JP2833757B2 (ja) | 1987-06-15 | 1988-05-31 | 半導体素子の製造用ウエーハの処理装置 |
| US07/205,577 US4979464A (en) | 1987-06-15 | 1988-06-13 | Apparatus for treating wafers in the manufacture of semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873719952 DE3719952A1 (de) | 1987-06-15 | 1987-06-15 | Einrichtung zur behandlung von wafern bei der herstellung von halbleiterelementen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3719952A1 true DE3719952A1 (de) | 1988-12-29 |
| DE3719952C2 DE3719952C2 (enExample) | 1989-05-03 |
Family
ID=6329745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873719952 Granted DE3719952A1 (de) | 1987-06-15 | 1987-06-15 | Einrichtung zur behandlung von wafern bei der herstellung von halbleiterelementen |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4979464A (enExample) |
| JP (1) | JP2833757B2 (enExample) |
| DE (1) | DE3719952A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4115509A1 (de) * | 1990-05-15 | 1991-11-28 | Hamatech Halbleiter Maschinenb | Verfahren zur bekeimung von halbleitersubstrat-oberflaechen, und vorrichtung zu seiner durchfuehrung |
| DE102013021716A1 (de) * | 2013-12-20 | 2015-06-25 | Gerresheimer Regensburg Gmbh | Vorrichtung und Verfahren zum Aufnehmen von Werkstücken |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH082999Y2 (ja) * | 1989-12-11 | 1996-01-29 | ミツミ電機株式会社 | スピンコート装置 |
| US5387557A (en) * | 1991-10-23 | 1995-02-07 | F. T. L. Co., Ltd. | Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones |
| US5461214A (en) * | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
| US5607009A (en) * | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
| US5651868A (en) * | 1994-10-26 | 1997-07-29 | International Business Machines Corporation | Method and apparatus for coating thin film data storage disks |
| US5850071A (en) * | 1996-02-16 | 1998-12-15 | Kokusai Electric Co., Ltd. | Substrate heating equipment for use in a semiconductor fabricating apparatus |
| US6069342A (en) * | 1996-12-18 | 2000-05-30 | Texas Instruments Incorporated | Automated multiple lead frame strip radiant die attach material curing apparatus |
| US5911896A (en) * | 1997-06-25 | 1999-06-15 | Brooks Automation, Inc. | Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element |
| US7244677B2 (en) | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
| US6565729B2 (en) | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
| US6497801B1 (en) | 1998-07-10 | 2002-12-24 | Semitool Inc | Electroplating apparatus with segmented anode array |
| US7585398B2 (en) | 1999-04-13 | 2009-09-08 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US7020537B2 (en) | 1999-04-13 | 2006-03-28 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| US7189318B2 (en) | 1999-04-13 | 2007-03-13 | Semitool, Inc. | Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece |
| US6916412B2 (en) | 1999-04-13 | 2005-07-12 | Semitool, Inc. | Adaptable electrochemical processing chamber |
| US7264698B2 (en) | 1999-04-13 | 2007-09-04 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US7351314B2 (en) | 2003-12-05 | 2008-04-01 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| KR100707121B1 (ko) | 1999-04-13 | 2007-04-16 | 세미툴 인코포레이티드 | 마이크로전자 피가공물을 전기화학적으로 처리하기 위한 장치 및 마이크로전자 피가공물 상에 재료를 전기도금하기 위한 방법 |
| US7438788B2 (en) | 1999-04-13 | 2008-10-21 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
| US7351315B2 (en) | 2003-12-05 | 2008-04-01 | Semitool, Inc. | Chambers, systems, and methods for electrochemically processing microfeature workpieces |
| US6158944A (en) * | 1999-06-18 | 2000-12-12 | Lucent Technologies, Inc. | Automated laser bar transfer apparatus and method |
| US6249955B1 (en) * | 1999-10-13 | 2001-06-26 | Agere Systems Optoelectronics Guardian Corp. | Laser bar transport method |
| US6692209B1 (en) * | 1999-11-19 | 2004-02-17 | Litton Systems, Inc. | Method and system for manufacturing a photocathode |
| US6780374B2 (en) | 2000-12-08 | 2004-08-24 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece at an elevated temperature |
| WO2001059815A2 (en) * | 2000-02-09 | 2001-08-16 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece at an elevated temperature |
| US6471913B1 (en) | 2000-02-09 | 2002-10-29 | Semitool, Inc. | Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature |
| AU2001282879A1 (en) | 2000-07-08 | 2002-01-21 | Semitool, Inc. | Methods and apparatus for processing microelectronic workpieces using metrology |
| WO2002101796A2 (en) * | 2001-06-12 | 2002-12-19 | Verteq, Inc. | Megasonic cleaner and dryer system |
| JP3886424B2 (ja) * | 2001-08-28 | 2007-02-28 | 鹿児島日本電気株式会社 | 基板処理装置及び方法 |
| US20040226513A1 (en) * | 2003-05-12 | 2004-11-18 | Applied Materials, Inc. | Chamber for uniform heating of large area substrates |
| FR2938116B1 (fr) * | 2008-11-04 | 2011-03-11 | Aplinov | Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux. |
| US9351569B1 (en) * | 2013-02-11 | 2016-05-31 | Automated Cells and Equipment, Inc. | Parts supply drawer system for robot assisted manufacturing |
| CN112005358B (zh) | 2018-04-19 | 2024-12-24 | 信越聚合物株式会社 | 基板收纳容器 |
| JP7073599B2 (ja) * | 2018-05-28 | 2022-05-24 | 信越ポリマー株式会社 | 基板収納容器 |
| US11114329B2 (en) * | 2019-04-08 | 2021-09-07 | Semiconductor Components Industries, Llc | Methods for loading or unloading substrate with evaporator planet |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2722545C2 (de) * | 1977-05-18 | 1984-03-08 | Kurt Dr.-Ing. 7802 Merzhausen Heber | Diffusionsofen zur Behandlung von Halbleitersubstraten |
| WO1985005758A1 (en) * | 1984-06-04 | 1985-12-19 | Edward Bok | Gaseous lock for entrance and exit of tunnel, in which transport and processing of wafers take place under double floating condition |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3019017A1 (de) * | 1980-05-19 | 1981-12-03 | KK Automation Klaus Th. Krämer GmbH & Co KG, 7107 Neckarsulm | Handhabungssystem fuer werkstuecke |
| US4457662A (en) * | 1982-03-25 | 1984-07-03 | Pennwalt Corporation | Automatic lead frame loading machine |
| US4457359A (en) * | 1982-05-25 | 1984-07-03 | Varian Associates, Inc. | Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer |
| US4527620A (en) * | 1984-05-02 | 1985-07-09 | Varian Associates, Inc. | Apparatus for controlling thermal transfer in a cyclic vacuum processing system |
| US4640223A (en) * | 1984-07-24 | 1987-02-03 | Dozier Alfred R | Chemical vapor deposition reactor |
| JPS627118A (ja) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | 分子線エピタキシ装置 |
-
1987
- 1987-06-15 DE DE19873719952 patent/DE3719952A1/de active Granted
-
1988
- 1988-05-31 JP JP13429088A patent/JP2833757B2/ja not_active Expired - Fee Related
- 1988-06-13 US US07/205,577 patent/US4979464A/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2722545C2 (de) * | 1977-05-18 | 1984-03-08 | Kurt Dr.-Ing. 7802 Merzhausen Heber | Diffusionsofen zur Behandlung von Halbleitersubstraten |
| WO1985005758A1 (en) * | 1984-06-04 | 1985-12-19 | Edward Bok | Gaseous lock for entrance and exit of tunnel, in which transport and processing of wafers take place under double floating condition |
Non-Patent Citations (1)
| Title |
|---|
| IBM Techn. Discl. Bull., Vol. 25, 1982, S. 2101-2102 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4115509A1 (de) * | 1990-05-15 | 1991-11-28 | Hamatech Halbleiter Maschinenb | Verfahren zur bekeimung von halbleitersubstrat-oberflaechen, und vorrichtung zu seiner durchfuehrung |
| DE102013021716A1 (de) * | 2013-12-20 | 2015-06-25 | Gerresheimer Regensburg Gmbh | Vorrichtung und Verfahren zum Aufnehmen von Werkstücken |
Also Published As
| Publication number | Publication date |
|---|---|
| US4979464A (en) | 1990-12-25 |
| JP2833757B2 (ja) | 1998-12-09 |
| JPS63318738A (ja) | 1988-12-27 |
| DE3719952C2 (enExample) | 1989-05-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FAIRCHILD CONVAC GMBH GERAETE ZUR HALBLEITERTECHNO |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FAIRCHILD TECHNOLOGIES GMBH GERAETE ZUR HALBLEITER |
|
| 8339 | Ceased/non-payment of the annual fee | ||
| 8370 | Indication of lapse of patent is to be deleted |