DE69301522T2 - Apparat für die Herstellung von Halbleiter-Einrichtungen - Google Patents
Apparat für die Herstellung von Halbleiter-EinrichtungenInfo
- Publication number
- DE69301522T2 DE69301522T2 DE1993601522 DE69301522T DE69301522T2 DE 69301522 T2 DE69301522 T2 DE 69301522T2 DE 1993601522 DE1993601522 DE 1993601522 DE 69301522 T DE69301522 T DE 69301522T DE 69301522 T2 DE69301522 T2 DE 69301522T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4288603A JPH0810678B2 (ja) | 1992-10-27 | 1992-10-27 | 半導体装置の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69301522D1 DE69301522D1 (de) | 1996-03-21 |
DE69301522T2 true DE69301522T2 (de) | 1996-06-27 |
Family
ID=17732372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1993601522 Expired - Fee Related DE69301522T2 (de) | 1992-10-27 | 1993-10-27 | Apparat für die Herstellung von Halbleiter-Einrichtungen |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0595300B1 (de) |
JP (1) | JPH0810678B2 (de) |
DE (1) | DE69301522T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0828333B2 (ja) * | 1992-11-30 | 1996-03-21 | 株式会社半導体プロセス研究所 | 半導体装置の製造装置 |
US6686226B1 (en) | 1994-02-10 | 2004-02-03 | Hitachi, Ltd. | Method of manufacturing a semiconductor device a ball grid array package structure using a supporting frame |
JP4559543B2 (ja) * | 1996-11-01 | 2010-10-06 | テファ デュンシヒトテヒニク ゲーエムベーハー | 薄い酸化物コーティングの製造装置 |
US5807792A (en) * | 1996-12-18 | 1998-09-15 | Siemens Aktiengesellschaft | Uniform distribution of reactants in a device layer |
US20080188011A1 (en) * | 2007-01-26 | 2008-08-07 | Silicon Genesis Corporation | Apparatus and method of temperature conrol during cleaving processes of thick film materials |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0319121B1 (de) * | 1987-11-30 | 1992-03-04 | Daidousanso Co., Ltd. | Apparat zur Produktion von Halbleitern |
US4987856A (en) * | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
US5133284A (en) * | 1990-07-16 | 1992-07-28 | National Semiconductor Corp. | Gas-based backside protection during substrate processing |
JPH0812846B2 (ja) * | 1991-02-15 | 1996-02-07 | 株式会社半導体プロセス研究所 | 半導体製造装置 |
JPH0669034A (ja) * | 1992-08-17 | 1994-03-11 | Daido Steel Co Ltd | 棒状多極磁石の着磁コイルとその着磁装置 |
-
1992
- 1992-10-27 JP JP4288603A patent/JPH0810678B2/ja not_active Expired - Lifetime
-
1993
- 1993-10-27 EP EP19930117421 patent/EP0595300B1/de not_active Expired - Lifetime
- 1993-10-27 DE DE1993601522 patent/DE69301522T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0810678B2 (ja) | 1996-01-31 |
EP0595300A1 (de) | 1994-05-04 |
EP0595300B1 (de) | 1996-02-07 |
DE69301522D1 (de) | 1996-03-21 |
JPH06140340A (ja) | 1994-05-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |