DE3717727C2 - - Google Patents

Info

Publication number
DE3717727C2
DE3717727C2 DE3717727A DE3717727A DE3717727C2 DE 3717727 C2 DE3717727 C2 DE 3717727C2 DE 3717727 A DE3717727 A DE 3717727A DE 3717727 A DE3717727 A DE 3717727A DE 3717727 C2 DE3717727 C2 DE 3717727C2
Authority
DE
Germany
Prior art keywords
hydrogen
layer
recording material
electrophotographic recording
argon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3717727A
Other languages
German (de)
English (en)
Other versions
DE3717727A1 (de
Inventor
Wilhelm Dr. 6236 Eschborn De Senske
Ekkehard 6457 Maintal De Niemann
Roland 6000 Frankfurt De Herkert
Guido 5551 Brauneberg De Blang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19873717727 priority Critical patent/DE3717727A1/de
Priority to US07/201,432 priority patent/US4900646A/en
Priority to JP63126057A priority patent/JPS6487764A/ja
Publication of DE3717727A1 publication Critical patent/DE3717727A1/de
Application granted granted Critical
Publication of DE3717727C2 publication Critical patent/DE3717727C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08285—Carbon-based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
DE19873717727 1987-05-26 1987-05-26 Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung Granted DE3717727A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19873717727 DE3717727A1 (de) 1987-05-26 1987-05-26 Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung
US07/201,432 US4900646A (en) 1987-05-26 1988-05-24 Electrophotographic recording material and method of producing it
JP63126057A JPS6487764A (en) 1987-05-26 1988-05-25 Electrophotographic recording material and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19873717727 DE3717727A1 (de) 1987-05-26 1987-05-26 Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
DE3717727A1 DE3717727A1 (de) 1988-12-08
DE3717727C2 true DE3717727C2 (enExample) 1990-02-15

Family

ID=6328453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873717727 Granted DE3717727A1 (de) 1987-05-26 1987-05-26 Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung

Country Status (3)

Country Link
US (1) US4900646A (enExample)
JP (1) JPS6487764A (enExample)
DE (1) DE3717727A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3908078C1 (en) * 1989-03-13 1990-08-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De Electrophotographic recording material, and process for the production thereof
US5239397A (en) * 1989-10-12 1993-08-24 Sharp Kabushiki Liquid crystal light valve with amorphous silicon photoconductor of amorphous silicon and hydrogen or a halogen
JPH03242653A (ja) * 1990-02-20 1991-10-29 Sharp Corp 電子写真感光体
JPH04133313A (ja) * 1990-09-25 1992-05-07 Semiconductor Energy Lab Co Ltd 半導体作製方法
TW237562B (enExample) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5866263A (en) * 1996-04-26 1999-02-02 Semi-Alloys Company Adsorbent lid construction
DE102010063815A1 (de) * 2010-12-21 2012-06-21 Sgl Carbon Se Kohlenstoff-Silizium-Mehrschichtsysteme

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146142A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Electrophotographic sensitive film
JPS56156836A (en) * 1980-05-08 1981-12-03 Minolta Camera Co Ltd Electrophotographic receptor
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors
DE3245500A1 (de) * 1982-12-09 1984-06-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrofotografisches aufzeichnungsmaterial und verfahren zu seiner herstellung
EP0249302B1 (en) * 1986-01-23 1994-04-06 Canon Kabushiki Kaisha Light receiving member for use in electrophotography

Also Published As

Publication number Publication date
US4900646A (en) 1990-02-13
JPS6487764A (en) 1989-03-31
DE3717727A1 (de) 1988-12-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee