DE3650133T2 - Verfahren zur Herstellung eines Halbleiterlasers mit versenktem Heteroübergang. - Google Patents

Verfahren zur Herstellung eines Halbleiterlasers mit versenktem Heteroübergang.

Info

Publication number
DE3650133T2
DE3650133T2 DE3650133T DE3650133T DE3650133T2 DE 3650133 T2 DE3650133 T2 DE 3650133T2 DE 3650133 T DE3650133 T DE 3650133T DE 3650133 T DE3650133 T DE 3650133T DE 3650133 T2 DE3650133 T2 DE 3650133T2
Authority
DE
Germany
Prior art keywords
heterojunction
sunk
production
semiconductor laser
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3650133T
Other languages
English (en)
Other versions
DE3650133D1 (de
Inventor
Yoshifumi Mori
Tsunekazu Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3650133D1 publication Critical patent/DE3650133D1/de
Application granted granted Critical
Publication of DE3650133T2 publication Critical patent/DE3650133T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE3650133T 1985-02-08 1986-02-05 Verfahren zur Herstellung eines Halbleiterlasers mit versenktem Heteroübergang. Expired - Fee Related DE3650133T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60022989A JP2716693B2 (ja) 1985-02-08 1985-02-08 半導体レーザー

Publications (2)

Publication Number Publication Date
DE3650133D1 DE3650133D1 (de) 1994-12-15
DE3650133T2 true DE3650133T2 (de) 1995-06-01

Family

ID=12097944

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3650133T Expired - Fee Related DE3650133T2 (de) 1985-02-08 1986-02-05 Verfahren zur Herstellung eines Halbleiterlasers mit versenktem Heteroübergang.

Country Status (6)

Country Link
US (1) US4737961A (de)
EP (1) EP0190737B1 (de)
JP (1) JP2716693B2 (de)
KR (1) KR940006782B1 (de)
CA (1) CA1268846A (de)
DE (1) DE3650133T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
US4932033A (en) * 1986-09-26 1990-06-05 Canon Kabushiki Kaisha Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
DE3877750T2 (de) * 1988-06-28 1993-07-08 Ibm Verfahren fuer das selektive aufwachsen von gaas.
US5070510A (en) * 1989-12-12 1991-12-03 Sharp Kabushiki Kaisha Semiconductor laser device
EP0473443B1 (de) * 1990-08-30 1999-03-24 Sharp Kabushiki Kaisha Halbleiterlaser mit vergrabener Streifenstruktur
JP2613975B2 (ja) * 1990-12-04 1997-05-28 シャープ株式会社 周期利得型半導体レーザ素子
JPH04236468A (ja) * 1991-01-18 1992-08-25 Toshiba Corp 光通信用発光ダイオ−ド素子
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
GB2299710B (en) * 1992-05-14 1997-01-08 Mitsubishi Electric Corp Semiconductor laser and method for manufacturing semiconductor laser
JPH06132608A (ja) * 1992-10-20 1994-05-13 Sony Corp 半導体レーザ及びその製造方法
JP2001352130A (ja) * 2000-06-05 2001-12-21 Fuji Photo Film Co Ltd 半導体レーザーおよびその作製方法
JP4124017B2 (ja) * 2003-05-12 2008-07-23 ソニー株式会社 面発光型半導体レーザ素子の製造方法
JP4613304B2 (ja) 2004-09-07 2011-01-19 独立行政法人産業技術総合研究所 量子ナノ構造半導体レーザ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4215319A (en) * 1979-01-17 1980-07-29 Rca Corporation Single filament semiconductor laser
US4429397A (en) * 1980-06-26 1984-01-31 Nippon Electric Co., Ltd. Buried heterostructure laser diode
JPS5712583A (en) * 1980-06-26 1982-01-22 Nec Corp Manufacture of semiconductor laser
JPS5712588A (en) * 1980-06-26 1982-01-22 Nec Corp Manufacture of buried type heterojunction laser element
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
JPH0682886B2 (ja) * 1984-06-08 1994-10-19 株式会社日立製作所 半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
CA1268846C (en) 1990-05-08
EP0190737B1 (de) 1994-11-09
JPS61183987A (ja) 1986-08-16
KR940006782B1 (ko) 1994-07-27
DE3650133D1 (de) 1994-12-15
US4737961A (en) 1988-04-12
CA1268846A (en) 1990-05-08
JP2716693B2 (ja) 1998-02-18
KR860006851A (ko) 1986-09-15
EP0190737A3 (en) 1987-10-21
EP0190737A2 (de) 1986-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee