DE3576609D1 - Verfahren zur herstellung eines heterouebergang-bipolartransistors. - Google Patents

Verfahren zur herstellung eines heterouebergang-bipolartransistors.

Info

Publication number
DE3576609D1
DE3576609D1 DE8585309267T DE3576609T DE3576609D1 DE 3576609 D1 DE3576609 D1 DE 3576609D1 DE 8585309267 T DE8585309267 T DE 8585309267T DE 3576609 T DE3576609 T DE 3576609T DE 3576609 D1 DE3576609 D1 DE 3576609D1
Authority
DE
Germany
Prior art keywords
producing
bipolar transistor
hetero transition
hetero
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585309267T
Other languages
English (en)
Inventor
Kouhei C O Patent Div Morizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3576609D1 publication Critical patent/DE3576609D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
DE8585309267T 1984-12-21 1985-12-19 Verfahren zur herstellung eines heterouebergang-bipolartransistors. Expired - Lifetime DE3576609D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59268383A JPS61147571A (ja) 1984-12-21 1984-12-21 ヘテロ接合バイポ−ラトランジスタの製造方法

Publications (1)

Publication Number Publication Date
DE3576609D1 true DE3576609D1 (de) 1990-04-19

Family

ID=17457723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585309267T Expired - Lifetime DE3576609D1 (de) 1984-12-21 1985-12-19 Verfahren zur herstellung eines heterouebergang-bipolartransistors.

Country Status (4)

Country Link
US (1) US4679305A (de)
EP (1) EP0188897B1 (de)
JP (1) JPS61147571A (de)
DE (1) DE3576609D1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
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GB2188479B (en) * 1986-03-26 1990-05-23 Stc Plc Semiconductor devices
GB8607822D0 (en) * 1986-03-27 1986-04-30 Plessey Co Plc Iii-v semiconductor devices
DE3788527T2 (de) * 1986-04-01 1994-05-11 Matsushita Electric Ind Co Ltd Bipolarer Transistor und sein Herstellungsverfahren.
JPS6348863A (ja) * 1986-08-19 1988-03-01 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタの製造方法
US4845541A (en) * 1986-05-29 1989-07-04 Regents Of The University Of Minnesota Tunneling emitter bipolar transistor
JPS6348862A (ja) * 1986-08-19 1988-03-01 Matsushita Electric Ind Co Ltd ヘテロ接合バイポ−ラトランジスタの製造方法
US4868633A (en) * 1986-10-22 1989-09-19 Texas Instruments Incorporated Selective epitaxy devices and method
JPS63188969A (ja) * 1987-01-30 1988-08-04 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタの製造方法
JPS63188968A (ja) * 1987-01-30 1988-08-04 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタの製造方法
JPS63263762A (ja) * 1987-04-22 1988-10-31 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタの製造方法
JPS63263761A (ja) * 1987-04-22 1988-10-31 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタの製造方法
US4872040A (en) * 1987-04-23 1989-10-03 International Business Machines Corporation Self-aligned heterojunction transistor
US4967254A (en) * 1987-07-16 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2619407B2 (ja) * 1987-08-24 1997-06-11 株式会社日立製作所 半導体装置の製造方法
US5124270A (en) * 1987-09-18 1992-06-23 Kabushiki Kaisha Toshiba Bipolar transistor having external base region
JPH01120818A (ja) * 1987-09-23 1989-05-12 Siemens Ag 低伝達抵抗オーム接触の形成方法
EP0312965B1 (de) * 1987-10-23 1992-12-30 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren selbstjustierten Heterobipolartransistors
JP2686764B2 (ja) * 1988-03-11 1997-12-08 国際電信電話株式会社 光半導体素子の製造方法
JPH01238161A (ja) * 1988-03-18 1989-09-22 Fujitsu Ltd 半導体装置及びその製造方法
US5064772A (en) * 1988-08-31 1991-11-12 International Business Machines Corporation Bipolar transistor integrated circuit technology
US4967253A (en) * 1988-08-31 1990-10-30 International Business Machines Corporation Bipolar transistor integrated circuit technology
US5098853A (en) * 1988-11-02 1992-03-24 Hughes Aircraft Company Self-aligned, planar heterojunction bipolar transistor and method of forming the same
EP0378794A1 (de) * 1989-01-18 1990-07-25 International Business Machines Corporation Aufbau und Herstellungsverfahren eines Vertikalen Bipolartransistors
US4939562A (en) * 1989-04-07 1990-07-03 Raytheon Company Heterojunction bipolar transistors and method of manufacture
US5212103A (en) * 1989-05-11 1993-05-18 Mitsubishi Denki Kabushiki Kaisha Method of making a heterojunction bipolar transistor
JPH02297942A (ja) * 1989-05-11 1990-12-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
NL8902292A (nl) * 1989-09-14 1991-04-02 Philips Nv Werkwijze voor het vervaardigen van een een mesa bevattende halfgeleiderinrichting.
FR2652200A1 (fr) * 1989-09-21 1991-03-22 Philips Lab Electronique Procede de realisation d'un circuit semiconducteur integre incluant un transistor bipolaire a heterojonction et/ou des resistances enterrees.
JP2553723B2 (ja) * 1989-12-25 1996-11-13 三菱電機株式会社 化合物半導体集積回路装置
EP0478923B1 (de) * 1990-08-31 1997-11-05 Texas Instruments Incorporated Verfahren zum Herstellen selbst-ausrichtender bipolarer Transistoren mit Heteroübergang
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
JP2971246B2 (ja) * 1992-04-15 1999-11-02 株式会社東芝 ヘテロバイポーラトランジスタの製造方法
US5346862A (en) * 1992-06-22 1994-09-13 Siemens Aktiengesellschaft Method for the electrical insulation of a circuit function element on a semiconductor component
US5242843A (en) * 1992-10-28 1993-09-07 Allied-Signal Inc. Method for making a heterojunction bipolar transistor with improved high frequency response
US5365089A (en) * 1992-12-23 1994-11-15 International Business Machines Corporation Double heterojunction bipolar transistor and the method of manufacture therefor
US5288660A (en) * 1993-02-01 1994-02-22 Avantek, Inc. Method for forming self-aligned t-shaped transistor electrode
DE19533677A1 (de) * 1995-09-12 1997-03-13 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors
US5716859A (en) * 1995-12-22 1998-02-10 The Whitaker Corporation Method of fabricating a silicon BJT
FR2764118B1 (fr) * 1997-05-30 2000-08-04 Thomson Csf Transistor bipolaire stabilise avec elements isolants electriques
US7038250B2 (en) * 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4347654A (en) * 1980-06-18 1982-09-07 National Semiconductor Corporation Method of fabricating a high-frequency bipolar transistor structure utilizing permeation-etching
US4356623A (en) * 1980-09-15 1982-11-02 Texas Instruments Incorporated Fabrication of submicron semiconductor devices
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
US4333794A (en) * 1981-04-07 1982-06-08 International Business Machines Corporation Omission of thick Si3 N4 layers in ISA schemes
JPS59138379A (ja) * 1983-01-27 1984-08-08 Toshiba Corp 半導体装置の製造方法
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
US4593457A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact
DE3512814A1 (de) * 1985-04-10 1986-10-30 Döhler GmbH, 6100 Darmstadt Alkoholfreie getraenke auf basis von cerealien, verfahren und mikroorganismen zu ihrer herstellung

Also Published As

Publication number Publication date
US4679305A (en) 1987-07-14
EP0188897A1 (de) 1986-07-30
JPS61147571A (ja) 1986-07-05
EP0188897B1 (de) 1990-03-14

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee