DE3585364D1 - Halbleitervorrichtungen mit hoher durchbruchspannung. - Google Patents

Halbleitervorrichtungen mit hoher durchbruchspannung.

Info

Publication number
DE3585364D1
DE3585364D1 DE8585201810T DE3585364T DE3585364D1 DE 3585364 D1 DE3585364 D1 DE 3585364D1 DE 8585201810 T DE8585201810 T DE 8585201810T DE 3585364 T DE3585364 T DE 3585364T DE 3585364 D1 DE3585364 D1 DE 3585364D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
breakthrough voltage
high breakthrough
voltage
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585201810T
Other languages
German (de)
English (en)
Inventor
Kenneth Ronald Whight
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3585364D1 publication Critical patent/DE3585364D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
DE8585201810T 1984-11-21 1985-11-08 Halbleitervorrichtungen mit hoher durchbruchspannung. Expired - Lifetime DE3585364D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08429410A GB2167229B (en) 1984-11-21 1984-11-21 Semiconductor devices

Publications (1)

Publication Number Publication Date
DE3585364D1 true DE3585364D1 (de) 1992-03-19

Family

ID=10570052

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585201810T Expired - Lifetime DE3585364D1 (de) 1984-11-21 1985-11-08 Halbleitervorrichtungen mit hoher durchbruchspannung.

Country Status (5)

Country Link
US (1) US4707719A (en, 2012)
EP (1) EP0182422B1 (en, 2012)
JP (1) JPS61127184A (en, 2012)
DE (1) DE3585364D1 (en, 2012)
GB (1) GB2167229B (en, 2012)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585331B2 (ja) * 1986-12-26 1997-02-26 株式会社東芝 高耐圧プレーナ素子
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
EP0360036B1 (de) * 1988-09-20 1994-06-01 Siemens Aktiengesellschaft Planarer pn-Übergang hoher Spannungsfestigkeit
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same
US5075739A (en) * 1990-01-02 1991-12-24 Motorola, Inc. High voltage planar edge termination using a punch-through retarding implant and floating field plates
JP2556175B2 (ja) * 1990-06-12 1996-11-20 三菱電機株式会社 半導体装置における電界集中防止構造
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
JP3207615B2 (ja) * 1992-06-24 2001-09-10 株式会社東芝 半導体装置
GB9215653D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
GB9216599D0 (en) * 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
GB9216953D0 (en) * 1992-08-11 1992-09-23 Philips Electronics Uk Ltd A semiconductor component
JP2956434B2 (ja) * 1992-10-30 1999-10-04 株式会社デンソー 絶縁分離形半導体装置
JP3417013B2 (ja) * 1993-10-18 2003-06-16 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
JP2850694B2 (ja) * 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置
US5750414A (en) * 1993-09-29 1998-05-12 Siemens Components, Inc. Method of fabricating a semiconductor device
CN1040814C (zh) * 1994-07-20 1998-11-18 电子科技大学 一种用于半导体器件的表面耐压区
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation
GB9700923D0 (en) * 1997-01-17 1997-03-05 Philips Electronics Nv Semiconductor devices
DE60029554T2 (de) * 1999-06-03 2007-07-12 Koninklijke Philips Electronics N.V. Halbleiterbauelement mit hochspannungselement
US6373118B1 (en) * 1999-08-11 2002-04-16 Lewyn Consulting, Inc. High-value integrated circuit resistor
JP4024990B2 (ja) * 2000-04-28 2007-12-19 株式会社ルネサステクノロジ 半導体装置
JP2005340550A (ja) * 2004-05-28 2005-12-08 Sanyo Electric Co Ltd 半導体装置
JP2005353991A (ja) * 2004-06-14 2005-12-22 Sanyo Electric Co Ltd 半導体装置
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
CN101361194B (zh) * 2005-12-27 2010-12-22 美商科斯德半导体股份有限公司 用于快速恢复整流器结构的装置及方法
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
JP2016225425A (ja) * 2015-05-29 2016-12-28 サンケン電気株式会社 半導体装置
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
DE102016120301A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur
DE102016120300A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Austria Ag Hochspannungsabschlussstruktur einer Leistungshalbleitervorrichtung
CN111063723B (zh) * 2019-11-25 2021-12-28 深圳深爱半导体股份有限公司 开关集成控制器
CN113437133B (zh) * 2021-06-22 2022-07-22 弘大芯源(深圳)半导体有限公司 一种耐二次击穿的功率双极晶体管
CN114093866B (zh) * 2021-11-19 2023-03-14 陕西亚成微电子股份有限公司 集成启动装置的mosfet结构及制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
JPS523277B2 (en, 2012) * 1973-05-19 1977-01-27
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices

Also Published As

Publication number Publication date
EP0182422A3 (en) 1988-01-07
GB2167229B (en) 1988-07-20
EP0182422B1 (en) 1992-02-05
JPS61127184A (ja) 1986-06-14
JPH0362309B2 (en, 2012) 1991-09-25
GB8429410D0 (en) 1985-01-03
EP0182422A2 (en) 1986-05-28
US4707719A (en) 1987-11-17
GB2167229A (en) 1986-05-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee