DE3527502C2 - - Google Patents

Info

Publication number
DE3527502C2
DE3527502C2 DE3527502A DE3527502A DE3527502C2 DE 3527502 C2 DE3527502 C2 DE 3527502C2 DE 3527502 A DE3527502 A DE 3527502A DE 3527502 A DE3527502 A DE 3527502A DE 3527502 C2 DE3527502 C2 DE 3527502C2
Authority
DE
Germany
Prior art keywords
channel
layer
groove
zone
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3527502A
Other languages
German (de)
English (en)
Other versions
DE3527502A1 (de
Inventor
Kenji Isehara Kanagawa Jp Miura
Shigeru Chigasaki Kanagawa Jp Nakajima
Kazushige Atsugi Kanagawa Jp Minegishi
Toshifumi Somatani
Takashi Zama Kanagawa Jp Morie
Tatsuo Yokohama Kanagawa Jp Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE3527502A1 publication Critical patent/DE3527502A1/de
Application granted granted Critical
Publication of DE3527502C2 publication Critical patent/DE3527502C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE19853527502 1984-07-28 1985-07-29 Festwertspeicher und verfahren zur herstellung desselben Granted DE3527502A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15795584A JPS6135554A (ja) 1984-07-28 1984-07-28 読出し専用メモリ−およびその製造方法

Publications (2)

Publication Number Publication Date
DE3527502A1 DE3527502A1 (de) 1986-02-13
DE3527502C2 true DE3527502C2 (OSRAM) 1990-04-12

Family

ID=15661108

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853527502 Granted DE3527502A1 (de) 1984-07-28 1985-07-29 Festwertspeicher und verfahren zur herstellung desselben

Country Status (4)

Country Link
US (1) US4630237A (OSRAM)
JP (1) JPS6135554A (OSRAM)
KR (1) KR890004470B1 (OSRAM)
DE (1) DE3527502A1 (OSRAM)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830981A (en) * 1984-07-03 1989-05-16 Texas Instruments Inc. Trench capacitor process for high density dynamic ram
US4791463A (en) * 1984-10-31 1988-12-13 Texas Instruments Incorporated Structure for contacting devices in three dimensional circuitry
US4914739A (en) * 1984-10-31 1990-04-03 Texas Instruments, Incorporated Structure for contacting devices in three dimensional circuitry
JPS61150366A (ja) * 1984-12-25 1986-07-09 Nec Corp Ｍｉｓ型メモリ−セル
JPS61263152A (ja) * 1985-05-15 1986-11-21 Nippon Texas Instr Kk マスクｒｏｍ装置
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
JPH0687500B2 (ja) * 1987-03-26 1994-11-02 日本電気株式会社 半導体記憶装置およびその製造方法
DE3715232A1 (de) * 1987-05-07 1988-11-17 Siemens Ag Verfahren zur substratkontaktierung bei der herstellung von durch isolationsgraeben getrennten bipolartransistorschaltungen
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
JP2507502B2 (ja) * 1987-12-28 1996-06-12 三菱電機株式会社 半導体装置
US5100823A (en) * 1988-02-29 1992-03-31 Motorola, Inc. Method of making buried stacked transistor-capacitor
DE3931381A1 (de) * 1989-09-20 1991-03-28 Siemens Ag Halbleiterschichtaufbau mit vergrabener verdrahtungsebene, verfahren fuer dessen herstellung und anwendung der vergrabenen verdrahtungsebene als vergrabene zellplatte fuer drams
JPH04354159A (ja) * 1991-05-31 1992-12-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5291435A (en) * 1993-01-07 1994-03-01 Yu Shih Chiang Read-only memory cell
DE4434725C1 (de) * 1994-09-28 1996-05-30 Siemens Ag Festwert-Speicherzellenanordnung und Verfahren zu deren Herstellung
DE4437581C2 (de) * 1994-10-20 1996-08-08 Siemens Ag Verfahren zur Herstellung einer Festwertspeicherzellenanordnung mit vertikalen MOS-Transistoren
DE19514834C1 (de) * 1995-04-21 1997-01-09 Siemens Ag Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung
US6389582B1 (en) * 1995-12-21 2002-05-14 John Valainis Thermal driven placement
US6271555B1 (en) * 1998-03-31 2001-08-07 International Business Machines Corporation Borderless wordline for DRAM cell
US6975052B2 (en) 2003-08-29 2005-12-13 Japan Servo Co., Ltd. Terminal arrangement of motor and capacitor motor
US20070045697A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
US20070045698A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Semiconductor structures with body contacts and fabrication methods thereof
US8159895B2 (en) 2006-08-17 2012-04-17 Broadcom Corporation Method and system for split threshold voltage programmable bitcells
CN104617097B (zh) * 2013-11-05 2017-12-05 上海华虹宏力半导体制造有限公司 掩模型只读存储器及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975221A (en) * 1973-08-29 1976-08-17 American Micro-Systems, Inc. Low capacitance V groove MOS NOR gate and method of manufacture
US4222062A (en) * 1976-05-04 1980-09-09 American Microsystems, Inc. VMOS Floating gate memory device
CA1118892A (en) * 1977-12-27 1982-02-23 John R. Edwards Semiconductor device utilizing memory cells with sidewall charge storage regions
US4198693A (en) * 1978-03-20 1980-04-15 Texas Instruments Incorporated VMOS Read only memory
JPS58207675A (ja) * 1982-05-28 1983-12-03 Oki Electric Ind Co Ltd Ｍｉｓ型半導体装置
JPS5911671A (ja) * 1982-07-12 1984-01-21 Toshiba Corp 半導体記憶装置とその製造方法

Also Published As

Publication number Publication date
US4630237A (en) 1986-12-16
DE3527502A1 (de) 1986-02-13
KR890004470B1 (ko) 1989-11-04
JPS6135554A (ja) 1986-02-20
KR860001491A (ko) 1986-02-26

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee