DE3439803C2 - - Google Patents
Info
- Publication number
- DE3439803C2 DE3439803C2 DE3439803A DE3439803A DE3439803C2 DE 3439803 C2 DE3439803 C2 DE 3439803C2 DE 3439803 A DE3439803 A DE 3439803A DE 3439803 A DE3439803 A DE 3439803A DE 3439803 C2 DE3439803 C2 DE 3439803C2
- Authority
- DE
- Germany
- Prior art keywords
- type
- layer
- base layer
- conductivity type
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 22
- 230000001681 protective effect Effects 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000863814 Thyris Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/206—Cathode base regions of thyristors
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58228042A JPS60119776A (ja) | 1983-11-30 | 1983-11-30 | ゲ−トタ−ンオフサイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3439803A1 DE3439803A1 (de) | 1985-06-05 |
| DE3439803C2 true DE3439803C2 (en, 2012) | 1990-07-26 |
Family
ID=16870285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843439803 Granted DE3439803A1 (de) | 1983-11-30 | 1984-10-31 | Abschaltthyristor |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4609933A (en, 2012) |
| JP (1) | JPS60119776A (en, 2012) |
| DE (1) | DE3439803A1 (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214471A (ja) * | 1985-03-19 | 1986-09-24 | Res Dev Corp Of Japan | ゲ−ト制御半導体装置 |
| JPH0691245B2 (ja) * | 1985-06-26 | 1994-11-14 | 株式会社日立製作所 | ゲ−トタ−ンオフサイリスタ |
| EP0366916B1 (en) * | 1988-10-04 | 1995-06-14 | Kabushiki Kaisha Toshiba | Shorted-anode semiconductor device and methods of making the same |
| JP4748149B2 (ja) * | 2007-12-24 | 2011-08-17 | 株式会社デンソー | 半導体装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH594989A5 (en, 2012) * | 1976-09-03 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
| JPS607394B2 (ja) * | 1978-08-18 | 1985-02-23 | 株式会社明電舎 | 半導体制御素子 |
| JPS6043032B2 (ja) * | 1978-09-14 | 1985-09-26 | 株式会社日立製作所 | ゲートターンオフサイリスタ |
| DE2846637A1 (de) * | 1978-10-11 | 1980-04-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen |
| JPS55110068A (en) * | 1979-02-16 | 1980-08-25 | Fujitsu Ltd | Thyristor |
| JPS574101A (en) * | 1980-06-11 | 1982-01-09 | Hitachi Ltd | Moisture sensitive element |
| JPS5773956A (en) * | 1980-10-27 | 1982-05-08 | Hitachi Ltd | Glass coated semiconductor device |
| JPS5778172A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Gate turn-off thyristor |
-
1983
- 1983-11-30 JP JP58228042A patent/JPS60119776A/ja active Granted
-
1984
- 1984-10-18 US US06/662,080 patent/US4609933A/en not_active Expired - Lifetime
- 1984-10-31 DE DE19843439803 patent/DE3439803A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60119776A (ja) | 1985-06-27 |
| US4609933A (en) | 1986-09-02 |
| JPH026229B2 (en, 2012) | 1990-02-08 |
| DE3439803A1 (de) | 1985-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |