DE69319465T2 - Gate-Turn-Off-Thyristor und dessen Verwendung in Leistungwandlern - Google Patents

Gate-Turn-Off-Thyristor und dessen Verwendung in Leistungwandlern

Info

Publication number
DE69319465T2
DE69319465T2 DE69319465T DE69319465T DE69319465T2 DE 69319465 T2 DE69319465 T2 DE 69319465T2 DE 69319465 T DE69319465 T DE 69319465T DE 69319465 T DE69319465 T DE 69319465T DE 69319465 T2 DE69319465 T2 DE 69319465T2
Authority
DE
Germany
Prior art keywords
thyristor
power converters
gate turn
gate
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319465T
Other languages
English (en)
Other versions
DE69319465D1 (de
Inventor
Yuji Takayanagi
Susumu Murakami
Yukimasa Satou
Satoshi Matsuyoshi
Yasuhiro Mochizuki
Hidekatsu Onose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3343292A external-priority patent/JPH05235326A/ja
Priority claimed from JP4042758A external-priority patent/JP2722918B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69319465D1 publication Critical patent/DE69319465D1/de
Application granted granted Critical
Publication of DE69319465T2 publication Critical patent/DE69319465T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE69319465T 1992-02-20 1993-02-12 Gate-Turn-Off-Thyristor und dessen Verwendung in Leistungwandlern Expired - Fee Related DE69319465T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3343292A JPH05235326A (ja) 1992-02-20 1992-02-20 ゲートターンオフサイリスタ
JP4042758A JP2722918B2 (ja) 1992-02-28 1992-02-28 ゲートターンオフサイリスタ及びこれを用いた電力変換装置

Publications (2)

Publication Number Publication Date
DE69319465D1 DE69319465D1 (de) 1998-08-13
DE69319465T2 true DE69319465T2 (de) 1998-11-12

Family

ID=26372112

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319465T Expired - Fee Related DE69319465T2 (de) 1992-02-20 1993-02-12 Gate-Turn-Off-Thyristor und dessen Verwendung in Leistungwandlern

Country Status (3)

Country Link
US (1) US5459338A (de)
EP (1) EP0556739B1 (de)
DE (1) DE69319465T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3241526B2 (ja) * 1994-04-04 2001-12-25 三菱電機株式会社 ゲートターンオフサイリスタおよびその製造方法
DE4431294A1 (de) * 1994-09-02 1996-03-07 Abb Management Ag Abschaltbarer Thyristor für hohe Blockierspannungen und kleiner Bauelementdicke
AU5847599A (en) * 1998-07-29 2000-02-21 Infineon Technologies, Ag Power semiconductor having a reduced reverse current
DE19909105A1 (de) 1999-03-02 2000-09-14 Siemens Ag Symmetrischer Thyristor mit verringerter Dicke und Herstellungsverfahren dafür
US6703818B2 (en) 2001-12-26 2004-03-09 D/E Associates, Inc. AC to AC power converter for electronic devices having substantially different output voltage/current characteristics
JP2014063980A (ja) 2012-08-30 2014-04-10 Toshiba Corp 半導体装置
CN107863384A (zh) * 2017-10-20 2018-03-30 西安理工大学 注入增强缓冲层结构和含该结构的SiC光触发晶闸管

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56162976A (en) * 1980-05-16 1981-12-15 Hitachi Ltd Power converter
JPH0638707B2 (ja) * 1983-06-27 1994-05-18 株式会社日立製作所 逆導通形ゲートターンオフ形サイリスタの制御方法
US4654679A (en) * 1983-10-05 1987-03-31 Toyo Denki Seizo Kabushiki Kaisha Static induction thyristor with stepped-doping gate region
JPS6098823A (ja) * 1983-11-02 1985-06-01 株式会社東芝 電力変換装置
JPH0643979B2 (ja) * 1985-05-15 1994-06-08 博明 柳田 湿度センサー
JPS6269556A (ja) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp アノ−ド短絡型ゲ−トタ−ンオフサイリスタの製造方法
US4745513A (en) * 1986-09-15 1988-05-17 General Electric Company Protection of GTO converters by emitter switching
JP2604580B2 (ja) * 1986-10-01 1997-04-30 三菱電機株式会社 アノード短絡形ゲートターンオフサイリスタ
JP2633544B2 (ja) * 1987-01-29 1997-07-23 株式会社東芝 ゲートターンオフサイリスタ
JPH01165169A (ja) * 1987-12-22 1989-06-29 Meidensha Corp ゲートターンオフサイリスタ
JPH01189667A (ja) * 1988-01-26 1989-07-28 Ricoh Co Ltd 画像形成装置
JPH02177967A (ja) * 1988-12-28 1990-07-11 Koji Okada 保護物質およびその方法
JP3009620B2 (ja) * 1996-02-13 2000-02-14 シーケーディ株式会社 多極検出レゾルバにおける原点復帰方法及び多極検出レゾルバの原点復帰装置

Also Published As

Publication number Publication date
EP0556739A1 (de) 1993-08-25
EP0556739B1 (de) 1998-07-08
DE69319465D1 (de) 1998-08-13
US5459338A (en) 1995-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee