DE3415799C2 - - Google Patents
Info
- Publication number
- DE3415799C2 DE3415799C2 DE3415799A DE3415799A DE3415799C2 DE 3415799 C2 DE3415799 C2 DE 3415799C2 DE 3415799 A DE3415799 A DE 3415799A DE 3415799 A DE3415799 A DE 3415799A DE 3415799 C2 DE3415799 C2 DE 3415799C2
- Authority
- DE
- Germany
- Prior art keywords
- sic
- gas
- single crystal
- silicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 9
- 239000012159 carrier gas Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010961 commercial manufacture process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 241000201976 Polycarpon Species 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000012777 commercial manufacturing Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58076842A JPS59203799A (ja) | 1983-04-28 | 1983-04-28 | 炭化珪素単結晶基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3415799A1 DE3415799A1 (de) | 1984-10-31 |
| DE3415799C2 true DE3415799C2 (en, 2012) | 1989-12-14 |
Family
ID=13616916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843415799 Granted DE3415799A1 (de) | 1983-04-28 | 1984-04-27 | Verfahren zur herstellung eines einkristall-substrats aus siliziumcarbid |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4623425A (en, 2012) |
| JP (1) | JPS59203799A (en, 2012) |
| DE (1) | DE3415799A1 (en, 2012) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145992A (ja) * | 1983-12-29 | 1985-08-01 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
| JPS61243000A (ja) * | 1985-04-18 | 1986-10-29 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
| JPS6270297A (ja) * | 1985-09-24 | 1987-03-31 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
| JPS62138398A (ja) * | 1985-12-13 | 1987-06-22 | Agency Of Ind Science & Technol | 炭化けい素単結晶の製造法 |
| US5200157A (en) * | 1986-02-17 | 1993-04-06 | Toshiba Ceramics Co., Ltd. | Susceptor for vapor-growth deposition |
| JPH0658874B2 (ja) * | 1986-03-18 | 1994-08-03 | 富士通株式会社 | Ｘ線マスクの製造方法 |
| JPS6347983A (ja) * | 1986-08-18 | 1988-02-29 | Sharp Corp | 炭化珪素電界効果トランジスタ |
| US5229625A (en) * | 1986-08-18 | 1993-07-20 | Sharp Kabushiki Kaisha | Schottky barrier gate type field effect transistor |
| US4865659A (en) * | 1986-11-27 | 1989-09-12 | Sharp Kabushiki Kaisha | Heteroepitaxial growth of SiC on Si |
| JP2534525B2 (ja) * | 1987-12-19 | 1996-09-18 | 富士通株式会社 | β−炭化シリコン層の製造方法 |
| US5319220A (en) * | 1988-01-20 | 1994-06-07 | Sharp Kabushiki Kaisha | Silicon carbide semiconductor device |
| JPH01238111A (ja) * | 1988-03-18 | 1989-09-22 | Fujitsu Ltd | シリコンカーバイド半導体膜の製造方法 |
| US5279701A (en) * | 1988-05-11 | 1994-01-18 | Sharp Kabushiki Kaisha | Method for the growth of silicon carbide single crystals |
| JPH026387A (ja) * | 1988-06-09 | 1990-01-10 | Fujitsu Ltd | 薄膜形成方法 |
| DE4009837A1 (de) * | 1989-03-27 | 1990-10-11 | Sharp Kk | Verfahren zur herstellung einer halbleitereinrichtung |
| US5216264A (en) * | 1989-06-07 | 1993-06-01 | Sharp Kabushiki Kaisha | Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact |
| US5211801A (en) * | 1989-06-20 | 1993-05-18 | Siemens Aktiengesellschaft | Method for manufacturing single-crystal silicon carbide |
| US5230768A (en) * | 1990-03-26 | 1993-07-27 | Sharp Kabushiki Kaisha | Method for the production of SiC single crystals by using a specific substrate crystal orientation |
| JP2542448B2 (ja) * | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
| JP2556621B2 (ja) * | 1990-12-11 | 1996-11-20 | ホーヤ株式会社 | 炭化ケイ素膜の成膜方法 |
| DE4109005C1 (en, 2012) * | 1991-03-19 | 1992-09-10 | Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De | |
| JPH0529621A (ja) * | 1991-07-19 | 1993-02-05 | Rohm Co Ltd | 炭化珪素薄膜回路素子とその製造方法 |
| JPH0529332A (ja) * | 1991-07-22 | 1993-02-05 | Rohm Co Ltd | ヘテロ接合バイポーラトランジスタとその製造方法 |
| DE4135076A1 (de) * | 1991-10-24 | 1993-04-29 | Daimler Benz Ag | Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung |
| JPH0992882A (ja) * | 1995-09-25 | 1997-04-04 | Mitsubishi Electric Corp | 半導体発光素子，及びその製造方法 |
| SE9503428D0 (sv) † | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A method for epitaxially growing objects and a device for such a growth |
| JP3929140B2 (ja) | 1997-10-27 | 2007-06-13 | 日本碍子株式会社 | 耐蝕性部材およびその製造方法 |
| US6646292B2 (en) * | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
| AU2007275780B2 (en) * | 2006-07-19 | 2011-02-24 | Sk Siltron Css, Llc | Method of manufacturing substrates having improved carrier lifetimes |
| JP5693946B2 (ja) * | 2010-03-29 | 2015-04-01 | エア・ウォーター株式会社 | 単結晶３Ｃ−ＳｉＣ基板の製造方法 |
| JP5720140B2 (ja) * | 2010-08-13 | 2015-05-20 | セイコーエプソン株式会社 | 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法 |
| US20130052809A1 (en) * | 2011-08-25 | 2013-02-28 | United Microelectronics Corporation | Pre-clean method for epitaxial deposition and applications thereof |
| JP6488607B2 (ja) | 2014-09-22 | 2019-03-27 | 株式会社Sumco | 単結晶ＳｉＣウェーハの製造方法 |
| JP6526528B2 (ja) * | 2015-09-11 | 2019-06-05 | 株式会社東芝 | 半導体装置 |
| JP7261542B2 (ja) * | 2018-03-13 | 2023-04-20 | イビデン株式会社 | ＳｉＣ被覆ケイ素質材の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3847686A (en) * | 1970-05-27 | 1974-11-12 | Gen Electric | Method of forming silicon epitaxial layers |
| SU408509A1 (ru) * | 1970-11-09 | 1974-04-15 | о П и с ХТГи Е ИЗОБРЕТЕНИЯ(Ц)408509 | |
| JPS5148947A (en) * | 1974-10-25 | 1976-04-27 | Fujitsu Ltd | Indetsukusu supaasu bekutoruno seigyohoshiki |
| DE3002671C2 (de) * | 1979-01-25 | 1983-04-21 | Sharp K.K., Osaka | Verfahren zur Herstellung eines Siliciumcarbidsubstrats |
| JPS5838399B2 (ja) * | 1979-04-26 | 1983-08-23 | シャープ株式会社 | 炭化珪素結晶層の製造方法 |
| JPS55104999A (en) * | 1979-01-29 | 1980-08-11 | Sharp Corp | Production of silicon carbide crystal layer |
-
1983
- 1983-04-28 JP JP58076842A patent/JPS59203799A/ja active Granted
-
1984
- 1984-04-24 US US06/603,454 patent/US4623425A/en not_active Expired - Lifetime
- 1984-04-27 DE DE19843415799 patent/DE3415799A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3415799A1 (de) | 1984-10-31 |
| JPS59203799A (ja) | 1984-11-17 |
| JPS6346039B2 (en, 2012) | 1988-09-13 |
| US4623425A (en) | 1986-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3415799C2 (en, 2012) | ||
| DE3446956C2 (en, 2012) | ||
| DE3620329C2 (en, 2012) | ||
| DE112009000360B4 (de) | Verfahren zum Wachsen eines Siliziumkarbideinkristalls | |
| DE3786148T2 (de) | Verfahren zur hetero-epitaktischen zuechtung. | |
| DE102015202131B4 (de) | Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung und Siliziumkarbid-Halbleitervorrichtung | |
| DE112008003497B4 (de) | Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls | |
| DE112009000328B4 (de) | Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls | |
| DE2745335A1 (de) | Vorrichtung zum ziehen von einkristallinem silizium | |
| DE68913085T2 (de) | Diamantzüchtung auf einem Substrat mit Hilfe von Mikrowellenenergie. | |
| DE1197058B (de) | Verfahren zur Herstellung einkristalliner flacher Halbleiterkoerper | |
| DE102022207643B4 (de) | Halbisolierendes Galliumarsenid-Einkristall und Verfahren zu seiner Herstellung | |
| DE1769298B2 (de) | Verfahren zum epitaktischen Aufwachsen von Silicium oder Germanium auf einer Unterlage aus einkristallinem Saphir | |
| DE3514294A1 (de) | Mit indium dotierte halbisolierende galliumarsenideinkristalle und verfahren zu ihrer herstellung | |
| DE3751884T2 (de) | Herstellungsverfahren einer niedergeschlagenen Kristallschicht | |
| DE3613012C2 (en, 2012) | ||
| EP3662504A1 (de) | Halbleiterscheibe aus einkristallinem silizium und verfahren zur herstellung der halbleiterscheibe | |
| EP0745704B1 (de) | Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe | |
| DE102008036143A1 (de) | Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium | |
| DE112017005704B4 (de) | Verfahren zum Herstellen eines Silizium-Einkristalls und Silizium-Einkristallwafer | |
| DE3002671C2 (de) | Verfahren zur Herstellung eines Siliciumcarbidsubstrats | |
| DE3787038T2 (de) | Verfahren zur Ausbildung eines abgeschiedenen Films. | |
| DE3689387T2 (de) | Verfahren zur Herstellung einer Dünnschicht aus GaAs. | |
| DE1444502B2 (de) | Verfahren zur Regelung der Schärfe von an Galliumarsenid-Einkristallen zu bildenden pn-übergängen | |
| EP1805354B1 (de) | Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |