DE3415799C2 - - Google Patents

Info

Publication number
DE3415799C2
DE3415799C2 DE3415799A DE3415799A DE3415799C2 DE 3415799 C2 DE3415799 C2 DE 3415799C2 DE 3415799 A DE3415799 A DE 3415799A DE 3415799 A DE3415799 A DE 3415799A DE 3415799 C2 DE3415799 C2 DE 3415799C2
Authority
DE
Germany
Prior art keywords
sic
gas
single crystal
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3415799A
Other languages
German (de)
English (en)
Other versions
DE3415799A1 (de
Inventor
Akira Nara Jp Suzuki
Katsuki Furukawa
Yoshiyuki Tenri Nara Jp Higashigaki
Shigeo Isehara Kanagawa Jp Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3415799A1 publication Critical patent/DE3415799A1/de
Application granted granted Critical
Publication of DE3415799C2 publication Critical patent/DE3415799C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DE19843415799 1983-04-28 1984-04-27 Verfahren zur herstellung eines einkristall-substrats aus siliziumcarbid Granted DE3415799A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58076842A JPS59203799A (ja) 1983-04-28 1983-04-28 炭化珪素単結晶基板の製造方法

Publications (2)

Publication Number Publication Date
DE3415799A1 DE3415799A1 (de) 1984-10-31
DE3415799C2 true DE3415799C2 (US07709020-20100504-C00032.png) 1989-12-14

Family

ID=13616916

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843415799 Granted DE3415799A1 (de) 1983-04-28 1984-04-27 Verfahren zur herstellung eines einkristall-substrats aus siliziumcarbid

Country Status (3)

Country Link
US (1) US4623425A (US07709020-20100504-C00032.png)
JP (1) JPS59203799A (US07709020-20100504-C00032.png)
DE (1) DE3415799A1 (US07709020-20100504-C00032.png)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145992A (ja) * 1983-12-29 1985-08-01 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS61243000A (ja) * 1985-04-18 1986-10-29 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS6270297A (ja) * 1985-09-24 1987-03-31 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS62138398A (ja) * 1985-12-13 1987-06-22 Agency Of Ind Science & Technol 炭化けい素単結晶の製造法
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
JPH0658874B2 (ja) * 1986-03-18 1994-08-03 富士通株式会社 Ｘ線マスクの製造方法
JPS6347983A (ja) * 1986-08-18 1988-02-29 Sharp Corp 炭化珪素電界効果トランジスタ
US5229625A (en) * 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
JP2534525B2 (ja) * 1987-12-19 1996-09-18 富士通株式会社 β−炭化シリコン層の製造方法
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
JPH01238111A (ja) * 1988-03-18 1989-09-22 Fujitsu Ltd シリコンカーバイド半導体膜の製造方法
US5279701A (en) * 1988-05-11 1994-01-18 Sharp Kabushiki Kaisha Method for the growth of silicon carbide single crystals
JPH026387A (ja) * 1988-06-09 1990-01-10 Fujitsu Ltd 薄膜形成方法
DE4009837A1 (de) * 1989-03-27 1990-10-11 Sharp Kk Verfahren zur herstellung einer halbleitereinrichtung
US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
US5211801A (en) * 1989-06-20 1993-05-18 Siemens Aktiengesellschaft Method for manufacturing single-crystal silicon carbide
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
JP2542448B2 (ja) * 1990-05-24 1996-10-09 シャープ株式会社 電界効果トランジスタおよびその製造方法
JP2556621B2 (ja) * 1990-12-11 1996-11-20 ホーヤ株式会社 炭化ケイ素膜の成膜方法
DE4109005C1 (US07709020-20100504-C00032.png) * 1991-03-19 1992-09-10 Cs Halbleiter- Und Solartechnologie Gmbh, 8000 Muenchen, De
JPH0529621A (ja) * 1991-07-19 1993-02-05 Rohm Co Ltd 炭化珪素薄膜回路素子とその製造方法
JPH0529332A (ja) * 1991-07-22 1993-02-05 Rohm Co Ltd ヘテロ接合バイポーラトランジスタとその製造方法
DE4135076A1 (de) * 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung
JPH0992882A (ja) * 1995-09-25 1997-04-04 Mitsubishi Electric Corp 半導体発光素子，及びその製造方法
SE9503428D0 (sv) † 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
JP3929140B2 (ja) 1997-10-27 2007-06-13 日本碍子株式会社 耐蝕性部材およびその製造方法
US6646292B2 (en) * 1999-12-22 2003-11-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting device and method
WO2008011022A1 (en) 2006-07-19 2008-01-24 Dow Corning Corporation Method of manufacturing substrates having improved carrier lifetimes
JP5693946B2 (ja) * 2010-03-29 2015-04-01 エア・ウォーター株式会社 単結晶３Ｃ−ＳｉＣ基板の製造方法
JP5720140B2 (ja) 2010-08-13 2015-05-20 セイコーエプソン株式会社 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法
US20130052809A1 (en) * 2011-08-25 2013-02-28 United Microelectronics Corporation Pre-clean method for epitaxial deposition and applications thereof
JP6488607B2 (ja) 2014-09-22 2019-03-27 株式会社Sumco 単結晶ＳｉＣウェーハの製造方法
JP6526528B2 (ja) 2015-09-11 2019-06-05 株式会社東芝 半導体装置
JP7261542B2 (ja) * 2018-03-13 2023-04-20 イビデン株式会社 ＳｉＣ被覆ケイ素質材の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
SU408509A1 (ru) * 1970-11-09 1974-04-15 о П и с ХТГи Е ИЗОБРЕТЕНИЯ(Ц)408509
JPS5148947A (en) * 1974-10-25 1976-04-27 Fujitsu Ltd Indetsukusu supaasu bekutoruno seigyohoshiki
DE3002671C2 (de) * 1979-01-25 1983-04-21 Sharp K.K., Osaka Verfahren zur Herstellung eines Siliciumcarbidsubstrats
JPS5838399B2 (ja) * 1979-04-26 1983-08-23 シャープ株式会社 炭化珪素結晶層の製造方法
JPS55104999A (en) * 1979-01-29 1980-08-11 Sharp Corp Production of silicon carbide crystal layer

Also Published As

Publication number Publication date
DE3415799A1 (de) 1984-10-31
JPS6346039B2 (US07709020-20100504-C00032.png) 1988-09-13
US4623425A (en) 1986-11-18
JPS59203799A (ja) 1984-11-17

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition